BC847BWE6327
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Infineon Technologies BC847BWE6327

Manufacturer No:
BC847BWE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BWE6327 is an NPN silicon AF (Audio Frequency) transistor produced by Infineon Technologies. This transistor is part of the BC847 series, known for its high performance and reliability in various electronic applications. It is designed to operate in audio frequency ranges and is suitable for both switching and amplifier applications.

Key Specifications

Parameter Value Unit
Transistor Polarity NPN
Collector-Base Voltage (VCBO) 50 V
Collector-Emitter Voltage (VCEO) 45 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 100 mA
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to +150 °C
Power Dissipation (PD) 250 mW
Current Gain (hFE) 110 - 800
Collector-Emitter Saturation Voltage (VCE(sat)) 90 - 250 mV (IC = 10 mA, IB = 0.5 mA)
Base-Emitter On Voltage (VBE(on)) 580 - 700 mV (VCE = 5 V, IC = 2 mA)
Current Gain Bandwidth Product (fT) 300 MHz

Key Features

  • High current gain (hFE) ranging from 110 to 800.
  • Low collector-emitter saturation voltage (VCE(sat)).
  • Low noise between 30 Hz and 15 kHz.
  • Pb-free (RoHS compliant) package.
  • Qualified according to AEC Q101 (except BC847BL3).
  • Complementary types available (BC857-BC860 for PNP).
  • Suitable for automatic insertion in thick and thin-film circuits.

Applications

  • AF input stages and driver applications.
  • Switching and amplifier applications.

Q & A

  1. What is the transistor polarity of the BC847BWE6327?

    The BC847BWE6327 is an NPN transistor.

  2. What is the maximum collector current (IC) of the BC847BWE6327?

    The maximum collector current is 100 mA.

  3. What is the collector-emitter voltage (VCEO) rating of the BC847BWE6327?

    The collector-emitter voltage rating is 45 V.

  4. Is the BC847BWE6327 RoHS compliant?
  5. What are the complementary types for the BC847BWE6327?

    The complementary types are BC857-BC860 for PNP transistors).

  6. What is the current gain bandwidth product (fT) of the BC847BWE6327?

    The current gain bandwidth product is 300 MHz).

  7. What are the typical applications for the BC847BWE6327?

    The BC847BWE6327 is typically used in AF input stages, driver applications, and switching and amplifier applications).

  8. What is the junction temperature (TJ) rating of the BC847BWE6327?

    The junction temperature rating is 150°C).

  9. Is the BC847BWE6327 qualified according to AEC Q101?
  10. What is the power dissipation (PD) of the BC847BWE6327?

    The power dissipation is 250 mW).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
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Similar Products

Part Number BC847BWE6327 BC847B-E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 330 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323-3 PG-SOT23

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