FM28V100-TG
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Infineon Technologies FM28V100-TG

Manufacturer No:
FM28V100-TG
Manufacturer:
Infineon Technologies
Package:
Tray
Description:
IC FRAM 1MBIT PARALLEL 32TSOP I
Delivery:
Payment:
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Product Introduction

Overview

The FM28V100-TG is a 1-Mbit (128K × 8) ferroelectric random access memory (F-RAM) produced by Infineon Technologies. This nonvolatile memory device operates similarly to a standard SRAM, allowing for read and write operations without the need for additional power to retain data. The FM28V100-TG is designed to be a drop-in replacement for standard asynchronous SRAMs, eliminating the reliability concerns and system design complexities associated with battery-backed SRAM (BBSRAM). It offers fast write timing and high write endurance, making it ideal for applications requiring frequent or rapid writes.

Key Specifications

Parameter Value
Memory Size 1 Mbit (128K × 8)
Package Type 32-pin TSOP-I
Voltage Range 2.0 V to 3.6 V
Active Current 7 mA (typ)
Standby Current 90 μA (typ)
Temperature Range –40 °C to +85 °C
Interface Parallel
Write Endurance High write endurance
Package Dimensions 11.9 mm (max width) × 8.1 mm (max length) × 1.05 mm (max height)

Key Features

  • Nonvolatile Memory: Data is retained after power is removed, with over 151 years of data retention.
  • Low Power Consumption: Active current of 7 mA (typ) and standby current of 90 μA (typ).
  • Fast Write Timing: High-speed writes with no delay, eliminating the need for data polling.
  • High Write Endurance: Superior to other types of memory in terms of write cycles.
  • Industrial Temperature Range: Operates from –40 °C to +85 °C.
  • RoHS Compliant: Meets the Restriction of Hazardous Substances (RoHS) standards.
  • Page Mode Operation: Fast access to addresses within a page (row) for both reads and writes.

Applications

  • Industrial Automation: Ideal for applications requiring frequent data updates and high reliability.
  • Medical Devices: Suitable for medical devices that need nonvolatile memory with low power consumption.
  • Aerospace and Defense: Used in systems that require high write endurance and data retention over long periods.
  • Consumer Electronics: Applicable in consumer devices that need fast and reliable nonvolatile memory.
  • Automotive Systems: Can be used in automotive systems that require robust and reliable memory solutions.

Q & A

  1. What is the memory size of the FM28V100-TG?

    The FM28V100-TG has a memory size of 1 Mbit, organized as 128K × 8 bits.

  2. What is the typical active current of the FM28V100-TG?

    The typical active current is 7 mA.

  3. What is the temperature range for the FM28V100-TG?

    The device operates over an industrial temperature range of –40 °C to +85 °C.

  4. Is the FM28V100-TG RoHS compliant?
  5. What is the package type of the FM28V100-TG?

    The device is available in a 32-pin TSOP-I package.

  6. Can the FM28V100-TG be used as a drop-in replacement for standard SRAM?
  7. What is the write endurance of the FM28V100-TG?
  8. Does the FM28V100-TG require data polling for write operations?
  9. What is the voltage range for the FM28V100-TG?
  10. Does the FM28V100-TG support page mode operation?

Product Attributes

Memory Type:Non-Volatile
Memory Format:FRAM
Technology:FRAM (Ferroelectric RAM)
Memory Size:1Mb (128K x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:90ns
Access Time:90 ns
Voltage - Supply:2V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package:32-TSOP I
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In Stock

$22.52
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Same Series
FM28V100-TGTR
FM28V100-TGTR
IC FRAM 1MBIT PARALLEL 32TSOP I

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