FM28V100-TG
  • Share:

Infineon Technologies FM28V100-TG

Manufacturer No:
FM28V100-TG
Manufacturer:
Infineon Technologies
Package:
Tray
Description:
IC FRAM 1MBIT PARALLEL 32TSOP I
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FM28V100-TG is a 1-Mbit (128K × 8) ferroelectric random access memory (F-RAM) produced by Infineon Technologies. This nonvolatile memory device operates similarly to a standard SRAM, allowing for read and write operations without the need for additional power to retain data. The FM28V100-TG is designed to be a drop-in replacement for standard asynchronous SRAMs, eliminating the reliability concerns and system design complexities associated with battery-backed SRAM (BBSRAM). It offers fast write timing and high write endurance, making it ideal for applications requiring frequent or rapid writes.

Key Specifications

Parameter Value
Memory Size 1 Mbit (128K × 8)
Package Type 32-pin TSOP-I
Voltage Range 2.0 V to 3.6 V
Active Current 7 mA (typ)
Standby Current 90 μA (typ)
Temperature Range –40 °C to +85 °C
Interface Parallel
Write Endurance High write endurance
Package Dimensions 11.9 mm (max width) × 8.1 mm (max length) × 1.05 mm (max height)

Key Features

  • Nonvolatile Memory: Data is retained after power is removed, with over 151 years of data retention.
  • Low Power Consumption: Active current of 7 mA (typ) and standby current of 90 μA (typ).
  • Fast Write Timing: High-speed writes with no delay, eliminating the need for data polling.
  • High Write Endurance: Superior to other types of memory in terms of write cycles.
  • Industrial Temperature Range: Operates from –40 °C to +85 °C.
  • RoHS Compliant: Meets the Restriction of Hazardous Substances (RoHS) standards.
  • Page Mode Operation: Fast access to addresses within a page (row) for both reads and writes.

Applications

  • Industrial Automation: Ideal for applications requiring frequent data updates and high reliability.
  • Medical Devices: Suitable for medical devices that need nonvolatile memory with low power consumption.
  • Aerospace and Defense: Used in systems that require high write endurance and data retention over long periods.
  • Consumer Electronics: Applicable in consumer devices that need fast and reliable nonvolatile memory.
  • Automotive Systems: Can be used in automotive systems that require robust and reliable memory solutions.

Q & A

  1. What is the memory size of the FM28V100-TG?

    The FM28V100-TG has a memory size of 1 Mbit, organized as 128K × 8 bits.

  2. What is the typical active current of the FM28V100-TG?

    The typical active current is 7 mA.

  3. What is the temperature range for the FM28V100-TG?

    The device operates over an industrial temperature range of –40 °C to +85 °C.

  4. Is the FM28V100-TG RoHS compliant?
  5. What is the package type of the FM28V100-TG?

    The device is available in a 32-pin TSOP-I package.

  6. Can the FM28V100-TG be used as a drop-in replacement for standard SRAM?
  7. What is the write endurance of the FM28V100-TG?
  8. Does the FM28V100-TG require data polling for write operations?
  9. What is the voltage range for the FM28V100-TG?
  10. Does the FM28V100-TG support page mode operation?

Product Attributes

Memory Type:Non-Volatile
Memory Format:FRAM
Technology:FRAM (Ferroelectric RAM)
Memory Size:1Mb (128K x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:90ns
Access Time:90 ns
Voltage - Supply:2V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package:32-TSOP I
0 Remaining View Similar

In Stock

$22.52
16

Please send RFQ , we will respond immediately.

Same Series
FM28V100-TGTR
FM28V100-TGTR
IC FRAM 1MBIT PARALLEL 32TSOP I

Related Product By Categories

MX25L6406EM2I-12G
MX25L6406EM2I-12G
Macronix
IC FLASH 64MBIT SPI 86MHZ 8SOP
W25N01GVZEIG TR
W25N01GVZEIG TR
Winbond Electronics
IC FLASH 1GBIT SPI 104MHZ 8WSON
MX25L6433FM2I-08G
MX25L6433FM2I-08G
Macronix
IC FLASH 64MBIT SPI/QUAD 8SOP
M95M01-DWDW4TP/K
M95M01-DWDW4TP/K
STMicroelectronics
IC EEPROM 1MBIT SPI 16MHZ 8TSSOP
M95040-DRDW8TP/K
M95040-DRDW8TP/K
STMicroelectronics
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP
AT24C02AN-10SI
AT24C02AN-10SI
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M27C4001-90C1
M27C4001-90C1
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32PLCC
M27C4002-90C1
M27C4002-90C1
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
M27C512-90C1
M27C512-90C1
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M25P40-VMP6TG/TS TR
M25P40-VMP6TG/TS TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8VDFPN
JS28F128J3F75A
JS28F128J3F75A
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP
AT45DB321D-SU-2.5-SL383
AT45DB321D-SU-2.5-SL383
Adesto Technologies
IC FLASH 32MBIT SPI 50MHZ 8SOIC

Related Product By Brand

BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS 40-04 B5003
BAS 40-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BC857SH6433XTMA1
BC857SH6433XTMA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC848B-E6327
BC848B-E6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT23
BCP 54-16 E6327
BCP 54-16 E6327
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
TLE52062GAUMA1
TLE52062GAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V TO263-7
BTS500851TMAATMA1
BTS500851TMAATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4