M29F040B90K1
  • Share:

Micron Technology Inc. M29F040B90K1

Manufacturer No:
M29F040B90K1
Manufacturer:
Micron Technology Inc.
Package:
Tube
Description:
IC FLASH 4MBIT PARALLEL 32PLCC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29F040B90K1 is a non-volatile FLASH memory component designed and manufactured by Micron Technology Inc. This component is specifically engineered for applications where data must be preserved during power-off conditions. It is part of Micron's extensive range of memory and storage solutions, which cater to various industrial and consumer electronics needs.

Key Specifications

ParameterValue
TypeNon-Volatile FLASH Memory
Capacity4 Mbits (512 Kbytes)
Organization512 Kbytes x 8 bits
PackageTSOP40, PLCC32
Voltage Range4.5V to 5.5V
Read Access Time70 ns (Typical)
Write/Erase Cycles100,000 cycles (Typical)
Data Retention20 years (Typical)

Key Features

  • Non-volatile memory, retaining data during power-off conditions.
  • High-speed read access time of 70 ns (typical).
  • Endurance of up to 100,000 write/erase cycles.
  • Long data retention period of up to 20 years.
  • Available in TSOP40 and PLCC32 packages.
  • Operating voltage range of 4.5V to 5.5V.

Applications

The M29F040B90K1 is suitable for a variety of applications where non-volatile memory is required, such as:

  • Embedded systems and microcontrollers.
  • Industrial control systems.
  • Automotive electronics.
  • Consumer electronics requiring data storage.
  • Telecommunication devices.

Q & A

  1. What is the M29F040B90K1?

    The M29F040B90K1 is a non-volatile FLASH memory component manufactured by Micron Technology Inc.

  2. What is the capacity of the M29F040B90K1?

    The capacity is 4 Mbits (512 Kbytes).

  3. What are the available packages for the M29F040B90K1?

    The component is available in TSOP40 and PLCC32 packages.

  4. What is the operating voltage range of the M29F040B90K1?

    The operating voltage range is 4.5V to 5.5V.

  5. What is the typical read access time of the M29F040B90K1?

    The typical read access time is 70 ns.

  6. How many write/erase cycles can the M29F040B90K1 endure?

    The component can endure up to 100,000 write/erase cycles.

  7. What is the data retention period of the M29F040B90K1?

    The data retention period is up to 20 years.

  8. In what types of applications is the M29F040B90K1 commonly used?

    It is commonly used in embedded systems, industrial control systems, automotive electronics, consumer electronics, and telecommunication devices.

  9. Why is non-volatile memory important in these applications?

    Non-volatile memory is crucial because it retains data even when power is turned off, ensuring that critical information is not lost.

  10. Can the M29F040B90K1 be used in high-temperature environments?

    It is designed to operate within a specified temperature range; however, specific details should be checked in the datasheet for precise temperature limits.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:4Mb (512K x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:90ns
Access Time:90 ns
Voltage - Supply:4.5V ~ 5.5V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:32-LCC (J-Lead)
Supplier Device Package:32-PLCC (11.35x13.89)
0 Remaining View Similar

In Stock

-
220

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

MX25L6406EM2I-12G
MX25L6406EM2I-12G
Macronix
IC FLASH 64MBIT SPI 86MHZ 8SOP
CAT25256XI-T2
CAT25256XI-T2
onsemi
IC EEPROM 256KBIT SPI 8SOIC
M95512-DRMN3TP/K
M95512-DRMN3TP/K
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M95512-DFCS6TP/K
M95512-DFCS6TP/K
STMicroelectronics
IC EEPROM 512KBIT SPI 8WLCSP
SST26VF032BT-104I/SM
SST26VF032BT-104I/SM
Microchip Technology
IC FLASH 32MBIT SPI/QUAD 8SOIJ
M24C04-WMN6P
M24C04-WMN6P
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
DS2431P-A1+T
DS2431P-A1+T
Analog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC
AT24C02-10PC-2.7
AT24C02-10PC-2.7
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
AT24C02A-10PU-1.8
AT24C02A-10PU-1.8
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
M29W128FL70ZA6E
M29W128FL70ZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
M25P40-VMW6TGB TR
M25P40-VMW6TGB TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
MT41K256M16HA-125 M AIT:E
MT41K256M16HA-125 M AIT:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA

Related Product By Brand

MT47H128M16RT-25E:C TR
MT47H128M16RT-25E:C TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
MT25QU256ABA1EW9-0SIT TR
MT25QU256ABA1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MTFC8GAMALBH-AAT TR
MTFC8GAMALBH-AAT TR
Micron Technology Inc.
IC FLASH 64GBIT MMC 153TFBGA
MT25QL256ABA1EW9-0SIT
MT25QL256ABA1EW9-0SIT
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
M29F800DB70N6T TR
M29F800DB70N6T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M29F800DT70N1T TR
M29F800DT70N1T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M29W800DB70ZE6F TR
M29W800DB70ZE6F TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M25P32-VMF3TPB TR
M25P32-VMF3TPB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 16SO W
MT47H64M16NF-25E:M
MT47H64M16NF-25E:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT41K128M16JT-125 V:K TR
MT41K128M16JT-125 V:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT53D1024M32D4DT-046 AUT:D TR
MT53D1024M32D4DT-046 AUT:D TR
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 200VFBGA
MT41K256M16TW-107 AT:P
MT41K256M16TW-107 AT:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA