Overview
The NAND512W3A2CN6E is a 512 Mbit NAND Flash memory device manufactured by Micron Technology Inc. This device is part of the NAND512 series, designed for high-density data storage applications. It utilizes single-level cell (SLC) NAND technology, offering high performance and reliability for various industrial and commercial uses.
Key Specifications
| Parameter | Value |
|---|---|
| Memory Size | 512 Mbit (64M x 8) |
| Package / Case | TSOP-48, VFBGA |
| Supply Voltage | 1.8 V, 3 V |
| Page Size | x8 device: (512 + 16 spare) bytes, x16 device: (256 + 8 spare) words |
| Block Size | x8 device: (16K + 512 spare) bytes, x16 device: (8K + 256 spare) words |
| Page Read/Program Time | Random access: 12 µs (3 V)/15 µs (1.8 V), Page program time: 200 µs (typ) |
| Block Erase Time | 2 ms (typ) |
| Data Retention | 10 years |
| Program/Erase Cycles | 100,000 cycles (with ECC) |
Key Features
- High-density NAND flash memories with 512 Mbit memory array.
- Cost-effective solutions for mass storage applications.
- NAND interface with x8 or x16 bus width and multiplexed address/data.
- Fast block erase and copy back program mode.
- Status register and electronic signature.
- Security features including OTP area, serial number (unique ID) option, and hardware data protection.
- High reliability with 100,000 program/erase cycles and 10 years data retention.
- RoHS compliant packages.
- Development tools including error correction code models, bad blocks management, and wear leveling algorithms.
Applications
- Industrial control systems.
- Automotive electronics.
- Medical devices.
- Aerospace and defense systems.
- Data centers and cloud storage solutions.
- Industrial settings with high temperatures and humidity.
- Aerospace and defense applications requiring high reliability and security.
Q & A
- Q: What is the NAND512W3A2CN6E?
The NAND512W3A2CN6E is a 512 Mbit NAND Flash memory device manufactured by Micron Technology Inc., designed for high-density data storage applications.
- Q: What are the operating voltages of the NAND512W3A2CN6E?
The device operates with either a 1.8 V or 3 V voltage supply.
- Q: What is the page size of the NAND512W3A2CN6E?
The page size is (512 + 16 spare) bytes for x8 devices and (256 + 8 spare) words for x16 devices.
- Q: How many program/erase cycles does the NAND512W3A2CN6E support?
The device supports 100,000 program/erase cycles with ECC.
- Q: What is the data retention period of the NAND512W3A2CN6E?
The data retention period is 10 years.
- Q: Is the NAND512W3A2CN6E RoHS compliant?
Yes, the device is RoHS compliant.
- Q: What are the typical applications of the NAND512W3A2CN6E?
Typical applications include industrial control systems, automotive electronics, medical devices, aerospace and defense systems, and data centers.
- Q: What is the maximum read speed of the NAND512W3A2CN6E?
The maximum read speed is 52 MB/s.
- Q: What is the maximum write speed of the NAND512W3A2CN6E?
The maximum write speed is 35 MB/s.
- Q: Does the NAND512W3A2CN6E support security features?
Yes, it supports security features including OTP area, serial number (unique ID) option, and hardware data protection.
