M29W800DB45ZE6E
  • Share:

Micron Technology Inc. M29W800DB45ZE6E

Manufacturer No:
M29W800DB45ZE6E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 8MBIT PARALLEL 48TFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29W800DB45ZE6E is a parallel NOR Flash memory component produced by Micron Technology Inc. This device is designed for reliable code storage, including boot code, application code, operating system code, and execute-in-place (XIP) code. It is particularly suited for applications that require high performance and low power consumption.

Key Specifications

Specification Value
Memory Type Parallel NOR Flash
Memory Capacity 8 Mbits (1 Mbytes)
Package Type TSOP (Thin Small Outline Package) 48-pin
Voltage Range 2.7V to 3.6V
Read Access Time 45 ns (typical)
Write/Erase Cycles 100,000 cycles (minimum)
Data Retention 20 years (minimum)
Operating Temperature -40°C to 85°C

Key Features

  • High performance with fast read access times.
  • Low power consumption, making it suitable for battery-powered devices.
  • Execute-in-place (XIP) capability, allowing code execution directly from the flash memory.
  • High reliability with a minimum of 100,000 write/erase cycles.
  • Long data retention of at least 20 years.
  • Wide operating temperature range from -40°C to 85°C.

Applications

  • Embedded systems requiring reliable code storage.
  • Industrial control systems.
  • Automotive electronics.
  • Consumer electronics such as set-top boxes and gaming consoles.
  • Medical devices.

Q & A

  1. What is the memory capacity of the M29W800DB45ZE6E?

    The memory capacity is 8 Mbits (1 Mbyte).

  2. What is the typical read access time of this device?

    The typical read access time is 45 ns.

  3. What is the operating voltage range of the M29W800DB45ZE6E?

    The operating voltage range is from 2.7V to 3.6V.

  4. How many write/erase cycles can this device handle?

    The device can handle a minimum of 100,000 write/erase cycles.

  5. What is the data retention period of this flash memory?

    The data retention period is at least 20 years.

  6. What is the operating temperature range of the M29W800DB45ZE6E?

    The operating temperature range is from -40°C to 85°C.

  7. Does this device support execute-in-place (XIP) functionality?

    Yes, it supports XIP functionality.

  8. What package type is the M29W800DB45ZE6E available in?

    The device is available in a TSOP (Thin Small Outline Package) 48-pin package.

  9. What are some common applications for this device?

    Common applications include embedded systems, industrial control systems, automotive electronics, consumer electronics, and medical devices.

  10. Where can I find detailed specifications for the M29W800DB45ZE6E?

    Detailed specifications can be found on Micron Technology's official website and through distributors like Mouser Electronics.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:8Mb (1M x 8, 512K x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:45ns
Access Time:45 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFBGA
Supplier Device Package:48-TFBGA (6x8)
0 Remaining View Similar

In Stock

-
164

Please send RFQ , we will respond immediately.

Same Series
M29W800DB70N6T TR
M29W800DB70N6T TR
IC FLASH 8MBIT PARALLEL 48TSOP
M29W800DB70N6E
M29W800DB70N6E
IC FLASH 8MBIT PARALLEL 48TSOP
M29W800DB70M6
M29W800DB70M6
IC FLASH 8MBIT PARALLEL 44SO
M29W800DB70N1
M29W800DB70N1
IC FLASH 8MBIT PARALLEL 48TSOP
M29W800DB70ZE6F TR
M29W800DB70ZE6F TR
IC FLASH 8MBIT PARALLEL 48TFBGA
M29W800DT70ZE6E
M29W800DT70ZE6E
IC FLASH 8MBIT PARALLEL 48TFBGA
M29W800DT70ZE6F TR
M29W800DT70ZE6F TR
IC FLASH 8MBIT PARALLEL 48TFBGA
M29W800DT90N1
M29W800DT90N1
IC FLASH 8MBIT PARALLEL 48TSOP
M29W800DT45N6E
M29W800DT45N6E
IC FLASH 8MBIT PARALLEL 48TSOP
M29W800DB70ZM6F TR
M29W800DB70ZM6F TR
IC FLASH 8MBIT PARALLEL 44SO
M29W800DT45N6F TR
M29W800DT45N6F TR
IC FLASH 8MBIT PARALLEL 48TSOP
M29W800DT45ZE6F TR
M29W800DT45ZE6F TR
IC FLASH 8MBIT PARALLEL 48TFBGA

Similar Products

Part Number M29W800DB45ZE6E M29W800DT45ZE6E M29W400DB45ZE6E
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Obsolete Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile
Memory Format Flash Flash Flash
Technology FLASH - NOR FLASH - NOR FLASH - NOR
Memory Size 8Mb (1M x 8, 512K x 16) 8Mb (1M x 8, 512K x 16) 4Mb (512K x 8, 256K x 16)
Memory Interface Parallel Parallel Parallel
Clock Frequency - - -
Write Cycle Time - Word, Page 45ns 45ns 45ns
Access Time 45 ns 45 ns 45 ns
Voltage - Supply 2.7V ~ 3.6V 2.7V ~ 3.6V 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 48-TFBGA 48-TFBGA 48-TFBGA
Supplier Device Package 48-TFBGA (6x8) 48-TFBGA (6x8) 48-TFBGA (6x9)

Related Product By Categories

W25Q512JVEIQ
W25Q512JVEIQ
Winbond Electronics
IC FLASH 512MBIT SPI/QUAD 8WSON
MT47H128M16RT-25E:C
MT47H128M16RT-25E:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
W971GG6NB-25
W971GG6NB-25
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
CAT24C16WI-GT3
CAT24C16WI-GT3
onsemi
IC EEPROM 16KBIT I2C 8SOIC
CAT24C256WI-GT3
CAT24C256WI-GT3
onsemi
IC EEPROM 256KBIT I2C 1MHZ 8SOIC
CAT24AA02TDI-GT3
CAT24AA02TDI-GT3
onsemi
IC EEPROM 2KBIT I2C TSOT23-5
M95512-DFCS6TP/K
M95512-DFCS6TP/K
STMicroelectronics
IC EEPROM 512KBIT SPI 8WLCSP
M27C256B-10B6
M27C256B-10B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
M24C04-WMN6T
M24C04-WMN6T
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
M29W320DB70ZA3F TR
M29W320DB70ZA3F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 63TFBGA
MT47H64M16NF-25E:M
MT47H64M16NF-25E:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT41K256M16HA-125 XIT:E TR
MT41K256M16HA-125 XIT:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA

Related Product By Brand

MT25QL256ABA8ESF-0AAT TR
MT25QL256ABA8ESF-0AAT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 133MHZ 16SO
MT25QL512ABB1EW9-0SIT TR
MT25QL512ABB1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 8WPDFN
MT25QU02GCBB8E12-0SIT
MT25QU02GCBB8E12-0SIT
Micron Technology Inc.
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
M29F200BT70N1
M29F200BT70N1
Micron Technology Inc.
IC FLASH 2MBIT PARALLEL 48TSOP
M25P16-VMN3TP/4 TR
M25P16-VMN3TP/4 TR
Micron Technology Inc.
IC FLASH 16MBIT 75MHZ 8SO
M25P32-VMW6TG TR
M25P32-VMW6TG TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
M28W640HCB70N6F TR
M28W640HCB70N6F TR
Micron Technology Inc.
IC FLASH 64MBIT 70NS 48TSOP
MT41J128M16JT-125:K
MT41J128M16JT-125:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT41K128M16JT-125 AAT:K
MT41K128M16JT-125 AAT:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
NAND512R3A2SZA6F
NAND512R3A2SZA6F
Micron Technology Inc.
IC FLSH 512MBIT PARALLEL 63VFBGA
M25P40-VMP6TGBO2 TR
M25P40-VMP6TGBO2 TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8VDFPN
MT29F512G08CMCEBJ4-37ITRES:E
MT29F512G08CMCEBJ4-37ITRES:E
Micron Technology Inc.
IC MLC 256G 32GX8 VBGA 132VBGA