MT40A512M16LY-062E AT:E
  • Share:

Micron Technology Inc. MT40A512M16LY-062E AT:E

Manufacturer No:
MT40A512M16LY-062E AT:E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 8GBIT 1.6GHZ 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT40A512M16LY-062E IT:E is a DDR4 SDRAM (Synchronous Dynamic Random Access Memory) module manufactured by Micron Technology Inc. This component is part of Micron's DDR4 SDRAM product line, identified by the prefix 'MT40A'. The module has a capacity of 512 megabits, organized as 512M x 16 bits, and operates at a clock frequency of 1.6 GHz. The '062E' in the model number indicates a speed grade of DDR4-2666, which translates to a maximum data transfer rate of 2666 MT/s. The 'IT' suffix signifies that the module is designed for industrial temperature ranges, making it suitable for harsh environmental conditions.

This memory module is designed to provide high-speed data storage and retrieval capabilities, making it an essential component in various electronic devices such as smartphones, laptops, servers, and network equipment.

Key Specifications

Type Parameter
Technology SDRAM - DDR4
Memory Type Volatile
Memory Format DRAM
Memory Size 8Gbit
Memory Organization 512M x 16
Memory Interface Parallel
Clock Frequency 1.6 GHz
Access Time 13.75 ns
Supply Voltage 1.14V ~ 1.26V
Operating Temperature -40°C ~ 95°C (TC)
Package / Case FBGA-96

Key Features

  • High Data Transfer Rate: The MT40A512M16LY-062E IT:E provides a high data transfer rate, making it suitable for applications that require fast and efficient memory access, such as gaming, multimedia editing, and data processing.
  • Improved Bandwidth Efficiency: This module is designed to improve bandwidth efficiency, allowing for more data to be transferred in a given amount of time, thus enhancing overall system performance and responsiveness.
  • Low Power Consumption: Despite its high performance, the MT40A512M16LY-062E IT:E is designed for low power consumption, which is crucial for mobile devices and other applications where power efficiency is a key consideration. This helps in extending battery life and reducing heat generation.
  • Internal Organization: The module is internally organized into 16 banks, using double data rate (DDR) architecture for high-speed operation. It employs an 8n prefetch architecture, allowing two data words to be transferred per clock cycle on the I/O pins.

Applications

The MT40A512M16LY-062E IT:E memory module is designed for use in a wide range of applications that require fast and reliable memory performance. Common applications include:

  • Smartphones and mobile devices
  • Laptops and desktop computers
  • Servers and data centers
  • Network equipment and routers
  • Gaming consoles and high-performance computing systems

Q & A

  1. What is the memory type of the MT40A512M16LY-062E IT:E? The memory type is Volatile DRAM.
  2. What is the memory size and organization of this module? The memory size is 8Gbit, organized as 512M x 16.
  3. What is the clock frequency of the MT40A512M16LY-062E IT:E? The clock frequency is 1.6 GHz.
  4. What is the access time of this module? The access time is 13.75 ns.
  5. What is the supply voltage range for this module? The supply voltage range is 1.14V ~ 1.26V.
  6. What is the operating temperature range for this module? The operating temperature range is -40°C ~ 95°C (TC).
  7. What package type does the MT40A512M16LY-062E IT:E use? The module uses a FBGA-96 package.
  8. Is the MT40A512M16LY-062E IT:E RoHS compliant? Yes, it is RoHS compliant.
  9. What are some common applications for this memory module? Common applications include smartphones, laptops, servers, network equipment, and gaming consoles.
  10. How does the DDR4 architecture of this module improve performance? The DDR4 architecture uses an 8n prefetch architecture, allowing two data words to be transferred per clock cycle on the I/O pins, which improves bandwidth efficiency and overall system performance.

Product Attributes

Memory Type:Non-Volatile
Memory Format:DRAM
Technology:SDRAM - DDR4
Memory Size:8Gb (512M x 16)
Memory Interface:- 
Clock Frequency:1.6 GHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:- 
Operating Temperature:-40°C ~ 105°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (7.5x13.5)
0 Remaining View Similar

In Stock

-
68

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP

Related Product By Categories

M45PE80-VMP6TG
M45PE80-VMP6TG
Alliance Memory, Inc.
IC FLASH 8MBIT SPI 75MHZ 8VFQFPN
M95512-DFCS6TP/K
M95512-DFCS6TP/K
STMicroelectronics
IC EEPROM 512KBIT SPI 8WLCSP
DS2431P-A1+
DS2431P-A1+
Analog Devices Inc./Maxim Integrated
IC EEPROM 1KBIT 1-WIRE 6TSOC
MT25QL02GCBB8E12-0SIT TR
MT25QL02GCBB8E12-0SIT TR
Micron Technology Inc.
IC FLSH 2GBIT SPI 133MHZ 24TPBGA
AT24C02-10PC
AT24C02-10PC
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
AT24C02AN-10SC
AT24C02AN-10SC
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
AT24C02AN-10SC-2.7
AT24C02AN-10SC-2.7
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M27C2001-12C1
M27C2001-12C1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32PLCC
M29W320EB70N6F TR
M29W320EB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
MT47H128M16RT-25E AAT:C
MT47H128M16RT-25E AAT:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
AT45DB321D-SU-2.5-SL383
AT45DB321D-SU-2.5-SL383
Adesto Technologies
IC FLASH 32MBIT SPI 50MHZ 8SOIC
PCA24S08AD,118
PCA24S08AD,118
NXP USA Inc.
IC EEPROM 8KBIT I2C 400KHZ 8SO

Related Product By Brand

MT25QL512ABB8ESF-0AAT
MT25QL512ABB8ESF-0AAT
Micron Technology Inc.
IC FLASH 512MBIT SPI 16SOP2
MT29F512G08CMCEBJ4-37ITR:E TR
MT29F512G08CMCEBJ4-37ITR:E TR
Micron Technology Inc.
IC FLASH 512GBIT PAR 132VBGA
MT25QL128ABA1EW9-0SIT
MT25QL128ABA1EW9-0SIT
Micron Technology Inc.
IC FLASH 128MBIT SPI 8WPDFN
M29F400BB70N6T TR
M29F400BB70N6T TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W160EB70N6E
M29W160EB70N6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M25P40-VMP6TG TR
M25P40-VMP6TG TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8VDFPN
M29W128GL70ZA6E
M29W128GL70ZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
M29W160EB70N3E
M29W160EB70N3E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
MT41K256M16HA-125 M:E TR
MT41K256M16HA-125 M:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT41J128M16JT-093:K
MT41J128M16JT-093:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M25P64-VMF6TPBA TR
M25P64-VMF6TPBA TR
Micron Technology Inc.
IC FLASH 64MBIT SPI 75MHZ 16SO W
MT41K256M16HA-125 AAT:E
MT41K256M16HA-125 AAT:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA