Overview
The M29W800DB70ZE6E is an 8-Mbit Parallel NOR flash memory device produced by Micron Technology Inc. This non-volatile memory can be read, erased, and reprogrammed using a single low-voltage supply (2.7 to 3.6 V). On power-up, the memory defaults to its read mode, allowing it to be accessed like a ROM or EPROM. The device is organized as either 1 Mbit x 8 or 512 Kbits x 16 and is divided into multiple blocks that can be erased independently, ensuring that valid data is preserved during erase operations.
Key Specifications
| Parameter | Description |
|---|---|
| Capacity | 8 Mbit (1 Mbit x 8 or 512 Kbits x 16) |
| Supply Voltage | 2.7 V to 3.6 V |
| Access Times | 45 ns, 70 ns, 90 ns |
| Programming Time | 10 μs per byte/word typical |
| Memory Blocks | 19 blocks (1 boot block, 2 parameter blocks, 16 main blocks) |
| Package Options | TFBGA48 (6 x 8 mm), TSOP48 (12 x 20 mm), SO44 |
| Program/Erase Cycles | 100,000 cycles per block |
| Security Code | 64-bit security code |
Key Features
- Embedded byte/word program algorithms and on-chip program/erase controller for simplified programming and erasing.
- Erase suspend and resume modes allowing read and program operations during erase suspend.
- Unlock bypass program command for faster production/batch programming.
- Temporary block unprotection mode for flexible block protection.
- Common flash interface (CFI) with 64-bit security code.
- Low power consumption with standby and automatic standby modes.
- Chip Enable, Output Enable, and Write Enable signals for simple connection to most microprocessors.
Applications
The M29W800DB70ZE6E is suitable for a variety of applications requiring non-volatile memory, such as:
- Embedded systems and microcontrollers.
- Industrial control systems.
- Automotive electronics.
- Consumer electronics.
- Telecommunication devices.
Q & A
- What is the capacity of the M29W800DB70ZE6E?
The M29W800DB70ZE6E has a capacity of 8 Mbit, organized as either 1 Mbit x 8 or 512 Kbits x 16.
- What is the supply voltage range for this device?
The supply voltage range is 2.7 V to 3.6 V.
- What are the access times for this memory?
The access times are 45 ns, 70 ns, and 90 ns.
- How long does programming typically take per byte/word?
Programming typically takes 10 μs per byte/word.
- How many memory blocks does the device have?
The device has 19 memory blocks, including 1 boot block, 2 parameter blocks, and 16 main blocks.
- What package options are available for this device?
The device is available in TFBGA48 (6 x 8 mm), TSOP48 (12 x 20 mm), and SO44 packages.
- How many program/erase cycles can each block endure?
Each block can endure 100,000 program/erase cycles.
- Does the device support erase suspend and resume modes?
- What is the purpose of the unlock bypass program command?
The unlock bypass program command is used for faster production/batch programming.
- Is the device obsolete?
