M29W128GL70ZA6E
  • Share:

Micron Technology Inc. M29W128GL70ZA6E

Manufacturer No:
M29W128GL70ZA6E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 128MBIT PARALLEL 64TBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29W128GL70ZA6E is a 128Mb (16M x 8 or 8M x 16) parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is part of the M29W series, which utilizes 90nm single-level cell (SLC) technology. It operates on a single low-voltage supply and supports asynchronous random and page read operations from all blocks of the array. The device is designed for applications requiring high performance, reliability, and security.

Although the M29W128GL70ZA6E is currently obsolete and no longer manufactured, it remains relevant for legacy systems and applications where compatibility with this specific model is necessary.

Key Specifications

Parameter Value Description
Memory Capacity 128Mb (16M x 8 or 8M x 16) Memory organization in either x8 or x16 configuration
Supply Voltage (VCC) 2.7–3.6V Voltage range for program, erase, and read operations
Supply Voltage (VCCQ) 1.65–3.6V Voltage range for I/O buffers
Access Time 70ns Random access time
Package Type 64-ball TBGA (10mm x 13mm) Package dimensions and type
Temperature Range –40°C to +125°C (automotive grade) Operating temperature range for automotive applications
Program/Erase Cycles Minimum 100,000 cycles per block Endurance of the memory blocks
Protection VPP/WP# pin protection, software protection Hardware and software protection mechanisms

Key Features

  • Asynchronous Random and Page Read: Supports read operations from all blocks with page sizes of 8 words or 16 bytes.
  • Fast Program Commands: Includes 32-word (64-byte) write buffer and enhanced buffered program commands for 256 words.
  • Program/Erase Controller: Embedded controller simplifies programming and erasing with suspend and resume capabilities.
  • Hardware and Software Protection: Features VPP/WP# pin protection, volatile, nonvolatile, and password protection.
  • Extended Memory Block: 128-word (256-byte) block for permanent, secure identification.
  • Low Power Consumption: Standby and automatic power-saving modes.
  • RoHS Compliant: Available in RoHS-compliant packages.

Applications

The M29W128GL70ZA6E is suitable for a variety of applications requiring high-performance, reliable, and secure non-volatile memory. These include:

  • Automotive Systems: Certified for automotive applications with a temperature range of –40°C to +125°C.
  • Industrial Control Systems: Ideal for systems that require robust and reliable memory solutions.
  • Embedded Systems: Used in various embedded applications where high-speed read and write operations are necessary.
  • Consumer Electronics: Suitable for consumer devices that need secure and efficient memory solutions.

Q & A

  1. What is the memory capacity of the M29W128GL70ZA6E?

    The M29W128GL70ZA6E has a memory capacity of 128Mb, organized as either 16M x 8 or 8M x 16.

  2. What is the operating voltage range for this device?

    The supply voltage (VCC) range is 2.7–3.6V, and the I/O buffer voltage (VCCQ) range is 1.65–3.6V.

  3. What is the access time for random read operations?

    The random access time is 70ns.

  4. What type of package is available for this device?

    The device is available in a 64-ball TBGA package with dimensions of 10mm x 13mm.

  5. What is the temperature range for this device?

    The operating temperature range is –40°C to +125°C, making it suitable for automotive applications.

  6. How many program/erase cycles can each block endure?

    Each block can endure a minimum of 100,000 program/erase cycles.

  7. What protection mechanisms are available on this device?

    The device features VPP/WP# pin protection, as well as volatile, nonvolatile, and password protection mechanisms.

  8. Is the M29W128GL70ZA6E RoHS compliant?
  9. What is the purpose of the extended memory block?

    The extended memory block is a 128-word (256-byte) block used for permanent, secure identification.

  10. Is the M29W128GL70ZA6E still in production?

    No, the M29W128GL70ZA6E is obsolete and no longer manufactured.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:128Mb (16M x 8, 8M x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:70ns
Access Time:70 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:64-TBGA
Supplier Device Package:64-TBGA (10x13)
0 Remaining View Similar

In Stock

-
552

Please send RFQ , we will respond immediately.

Same Series
M29W128GL70N6F TR
M29W128GL70N6F TR
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GH70N3F TR
M29W128GH70N3F TR
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GH70ZA6F TR
M29W128GH70ZA6F TR
IC FLASH 128MBIT PARALLEL 64TBGA
M29W128GH7AN6F TR
M29W128GH7AN6F TR
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GL70ZA6F TR
M29W128GL70ZA6F TR
IC FLASH 128MBIT PARALLEL 64TBGA
M29W128GL70ZS6F TR
M29W128GL70ZS6F TR
IC FLASH 128MBIT PARALLEL 64FBGA
M29W128GH70ZA3E
M29W128GH70ZA3E
IC FLASH 128MBIT PARALLEL 64TBGA
M29W128GH7AN6E
M29W128GH7AN6E
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GL60ZA6E
M29W128GL60ZA6E
IC FLASH 128MBIT PARALLEL 64TBGA
M29W128GL70ZS3E
M29W128GL70ZS3E
IC FLASH 128MBIT PARALLEL 64FBGA
M29W128GL7AN6E
M29W128GL7AN6E
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GL7AZS6E
M29W128GL7AZS6E
IC FLASH 128MBIT PARALLEL 64FBGA

Similar Products

Part Number M29W128GL70ZA6E M29W128GSL70ZA6E M29W128GL70ZS6E M29W128FL70ZA6E
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile Non-Volatile
Memory Format Flash Flash Flash Flash
Technology FLASH - NOR FLASH - NOR FLASH - NOR FLASH - NOR
Memory Size 128Mb (16M x 8, 8M x 16) 128Mb (16M x 8, 8M x 16) 128Mb (16M x 8, 8M x 16) 128Mb (16M x 8, 8M x 16)
Memory Interface Parallel Parallel Parallel Parallel
Clock Frequency - - - -
Write Cycle Time - Word, Page 70ns 70ns 70ns 70ns
Access Time 70 ns 70 ns 70 ns 70 ns
Voltage - Supply 2.7V ~ 3.6V 2.7V ~ 3.6V 2.7V ~ 3.6V 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 64-TBGA 64-TBGA 64-LBGA 64-TBGA
Supplier Device Package 64-TBGA (10x13) 64-TBGA (10x13) 64-FBGA (11x13) 64-TBGA (10x13)

Related Product By Categories

CAT24C04YI-GT3
CAT24C04YI-GT3
onsemi
IC EEPROM 4KBIT I2C 8TSSOP
M24C02-DRMF3TG/K
M24C02-DRMF3TG/K
STMicroelectronics
IC EEPROM 2KBIT I2C 1MHZ 8MLP
CAT24C16C4ATR
CAT24C16C4ATR
onsemi
IC EEPROM 16KBIT I2C 4WLCSP
M29W800DB70ZE6F TR
M29W800DB70ZE6F TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M93C46-RDS6TG
M93C46-RDS6TG
STMicroelectronics
IC EEPROM 1KBIT SPI 1MHZ 8TSSOP
M95020-WMN6T
M95020-WMN6T
STMicroelectronics
IC EEPROM 2KBIT SPI 20MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
M29W320DB70N3F TR
M29W320DB70N3F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M29W640GL70NB6F TR
M29W640GL70NB6F TR
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 56TSOP
M29W128GL7AZS6E
M29W128GL7AZS6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA
MT47H64M16NF-25E:M
MT47H64M16NF-25E:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT41K256M16HA-125 XIT:E TR
MT41K256M16HA-125 XIT:E TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA

Related Product By Brand

M25P40-VMN6P
M25P40-VMN6P
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8SO
M29F400BB70N6E
M29F400BB70N6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29F800DT70N1T TR
M29F800DT70N1T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M29W400DB55N6
M29W400DB55N6
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W640GL70NA6E
M29W640GL70NA6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P128-VMF6TP TR
M25P128-VMF6TP TR
Micron Technology Inc.
IC FLSH 128MBIT SPI 50MHZ 16SO W
M25P40-VMP6TG/TS TR
M25P40-VMP6TG/TS TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8VDFPN
MT48LC16M16A2P-6A:G
MT48LC16M16A2P-6A:G
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
M29W400DB70N6F TR
M29W400DB70N6F TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
MT47H32M16NF-25E:H
MT47H32M16NF-25E:H
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
MT47H64M16NF-25E IT:M
MT47H64M16NF-25E IT:M
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT41K512M16HA-125 AIT:A TR
MT41K512M16HA-125 AIT:A TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA