Overview
The M29W128GL70ZA6E is a 128Mb (16M x 8 or 8M x 16) parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is part of the M29W series, which utilizes 90nm single-level cell (SLC) technology. It operates on a single low-voltage supply and supports asynchronous random and page read operations from all blocks of the array. The device is designed for applications requiring high performance, reliability, and security.
Although the M29W128GL70ZA6E is currently obsolete and no longer manufactured, it remains relevant for legacy systems and applications where compatibility with this specific model is necessary.
Key Specifications
Parameter | Value | Description |
---|---|---|
Memory Capacity | 128Mb (16M x 8 or 8M x 16) | Memory organization in either x8 or x16 configuration |
Supply Voltage (VCC) | 2.7–3.6V | Voltage range for program, erase, and read operations |
Supply Voltage (VCCQ) | 1.65–3.6V | Voltage range for I/O buffers |
Access Time | 70ns | Random access time |
Package Type | 64-ball TBGA (10mm x 13mm) | Package dimensions and type |
Temperature Range | –40°C to +125°C (automotive grade) | Operating temperature range for automotive applications |
Program/Erase Cycles | Minimum 100,000 cycles per block | Endurance of the memory blocks |
Protection | VPP/WP# pin protection, software protection | Hardware and software protection mechanisms |
Key Features
- Asynchronous Random and Page Read: Supports read operations from all blocks with page sizes of 8 words or 16 bytes.
- Fast Program Commands: Includes 32-word (64-byte) write buffer and enhanced buffered program commands for 256 words.
- Program/Erase Controller: Embedded controller simplifies programming and erasing with suspend and resume capabilities.
- Hardware and Software Protection: Features VPP/WP# pin protection, volatile, nonvolatile, and password protection.
- Extended Memory Block: 128-word (256-byte) block for permanent, secure identification.
- Low Power Consumption: Standby and automatic power-saving modes.
- RoHS Compliant: Available in RoHS-compliant packages.
Applications
The M29W128GL70ZA6E is suitable for a variety of applications requiring high-performance, reliable, and secure non-volatile memory. These include:
- Automotive Systems: Certified for automotive applications with a temperature range of –40°C to +125°C.
- Industrial Control Systems: Ideal for systems that require robust and reliable memory solutions.
- Embedded Systems: Used in various embedded applications where high-speed read and write operations are necessary.
- Consumer Electronics: Suitable for consumer devices that need secure and efficient memory solutions.
Q & A
- What is the memory capacity of the M29W128GL70ZA6E?
The M29W128GL70ZA6E has a memory capacity of 128Mb, organized as either 16M x 8 or 8M x 16.
- What is the operating voltage range for this device?
The supply voltage (VCC) range is 2.7–3.6V, and the I/O buffer voltage (VCCQ) range is 1.65–3.6V.
- What is the access time for random read operations?
The random access time is 70ns.
- What type of package is available for this device?
The device is available in a 64-ball TBGA package with dimensions of 10mm x 13mm.
- What is the temperature range for this device?
The operating temperature range is –40°C to +125°C, making it suitable for automotive applications.
- How many program/erase cycles can each block endure?
Each block can endure a minimum of 100,000 program/erase cycles.
- What protection mechanisms are available on this device?
The device features VPP/WP# pin protection, as well as volatile, nonvolatile, and password protection mechanisms.
- Is the M29W128GL70ZA6E RoHS compliant?
- What is the purpose of the extended memory block?
The extended memory block is a 128-word (256-byte) block used for permanent, secure identification.
- Is the M29W128GL70ZA6E still in production?
No, the M29W128GL70ZA6E is obsolete and no longer manufactured.