Overview
The M29W128GL70N6E is a high-performance, 128Mb embedded parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is designed for reliable code storage, including boot code, application code, operating systems, and execute-in-place (XIP) code. It is built on 90nm single-level cell (SLC) technology, ensuring high reliability and performance.
Key Specifications
Specification | Value |
---|---|
Manufacturer | Micron Technology Inc. |
Memory Size | 128 Mbit (16 M x 8 or 8 M x 16) |
Supply Voltage | 2.7V - 3.6V (VCC), 1.65V - 3.6V (VCCQ) |
Access Time | 70ns (typical), 60ns (available upon request) |
Interface Type | Parallel |
Data Bus Width | 8-bit or 16-bit |
Package | 56-pin TSOP (14mm x 20mm), 64-ball TBGA (10mm x 13mm), 64-ball FBGA (11mm x 13mm) |
Temperature Range | –40°C to +125°C (automotive grade certified) |
Program/Erase Cycles | Minimum 100,000 cycles per block |
Protection | VPP/WP# pin protection, software protection (volatile, nonvolatile, password protection) |
Compliance | RoHS compliant |
Key Features
- Asynchronous random and page read capabilities with fast access times (25ns, 30ns, 60ns, 70ns, 80ns)
- Fast program commands: 32-word (64-byte) write buffer and enhanced buffered program commands for 256 words
- Program and erase suspend and resume capability
- On-chip program/erase controller with embedded byte/word program algorithms
- Unlock bypass, block erase, chip erase, write to buffer, and enhanced buffer program commands
- Extended memory block for permanent, secure identification (128 words or 256 bytes)
- Common flash interface with 64-bit security code
- Low power consumption in standby and automatic modes
- Hardware and software protection mechanisms to secure blocks from unwanted modification
Applications
The M29W128GL70N6E is ideal for various applications requiring reliable and high-performance non-volatile memory, such as:
- Boot code and firmware storage
- Application code and data storage
- Operating system storage
- Execute-in-place (XIP) code execution
- Automotive systems (certified to AEC Q100 and Q003 standards)
- Industrial control systems
- Embedded systems requiring secure and reliable memory
Q & A
- What is the memory size of the M29W128GL70N6E?
The M29W128GL70N6E has a memory size of 128 Mbit, organized as 16 M x 8 or 8 M x 16.
- What are the supply voltage ranges for this device?
The supply voltage ranges are 2.7V to 3.6V for VCC and 1.65V to 3.6V for VCCQ.
- What is the typical access time for this device?
The typical access time is 70ns, with a 60ns option available upon customer request.
- What types of packages are available for this device?
The device is available in 56-pin TSOP, 64-ball TBGA, and 64-ball FBGA packages.
- Is the M29W128GL70N6E RoHS compliant?
- What is the temperature range for this device?
The temperature range is –40°C to +125°C, making it suitable for automotive and industrial applications.
- How many program/erase cycles can the device handle?
The device can handle a minimum of 100,000 program/erase cycles per block.
- What protection mechanisms are available on this device?
The device features VPP/WP# pin protection, as well as software protection including volatile, nonvolatile, and password protection.
- Can the device be used for execute-in-place (XIP) code execution?
- Is the M29W128GL70N6E still in production?
No, the M29W128GL70N6E is obsolete and no longer manufactured.