Overview
The M29W128GL70ZA3E is a 128Mb 3V Embedded Parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is part of the M29W series, known for its high performance and reliability in various applications. It operates on a single low-voltage supply and supports asynchronous random and page read operations from all blocks of the array. The device is built on 90nm single-level cell (SLC) technology, ensuring robust and efficient memory management.
Key Specifications
| Parameter | Description |
|---|---|
| Memory Capacity | 128 Mb (16 MB) |
| Supply Voltage | VCC = 2.7–3.6V (program, erase, read), VCCQ = 1.65–3.6V (I/O buffers) |
| Access Time | 70 ns |
| Package Type | 64-ball TBGA (ZA), 10mm x 13mm, 1mm pitch |
| Temperature Range | –40°C to +125°C (automotive grade certified) |
| Program Time | 16 µs per byte/word (typical), 5s with VPPH and 8s without VPPH for chip program time |
| Endurance | Minimum 100,000 program/erase cycles per block |
| Protection | VPP/WP# pin protection, software protection (volatile, nonvolatile, password protection) |
| Extended Memory Block | 128-word (256-byte) memory block for permanent, secure identification |
Key Features
- Asynchronous random and page read operations with page sizes of 8 words or 16 bytes
- Fast program commands: 32-word (64-byte) write buffer and enhanced buffered program commands for 256 words in x16 mode
- Program/erase suspend and resume capability, allowing read from any block during program suspend and read or program another block during erase suspend
- Unlock bypass, block erase, chip erase, write to buffer, and enhanced buffer program commands
- Low power consumption with standby and automatic mode
- Common flash interface with 64-bit security code
- RoHS compliant packages
Applications
The M29W128GL70ZA3E is suitable for a wide range of applications, including:
- Automotive systems: Due to its automotive grade temperature range and certification, it is ideal for use in vehicles.
- Industrial control systems: Its robustness and reliability make it a good fit for industrial environments.
- Consumer electronics: It can be used in various consumer devices requiring high-performance flash memory.
- Embedded systems: Its low power consumption and high endurance make it suitable for embedded systems.
Q & A
- What is the memory capacity of the M29W128GL70ZA3E?
The memory capacity is 128 Mb (16 MB).
- What are the supply voltage ranges for this device?
The supply voltage ranges are VCC = 2.7–3.6V for program, erase, and read operations, and VCCQ = 1.65–3.6V for I/O buffers.
- What is the access time for this device?
The access time is 70 ns.
- What type of package does the M29W128GL70ZA3E come in?
The device comes in a 64-ball TBGA (ZA) package, 10mm x 13mm, with a 1mm pitch.
- What is the temperature range for this device?
The temperature range is –40°C to +125°C, which is automotive grade certified.
- How many program/erase cycles can the device endure?
The device can endure a minimum of 100,000 program/erase cycles per block.
- What protection mechanisms does the device offer?
The device offers VPP/WP# pin protection and software protection (volatile, nonvolatile, password protection).
- Does the device support fast programming?
Yes, the device supports fast programming with VPPH and enhanced buffered program commands.
- Is the device RoHS compliant?
Yes, the device is RoHS compliant.
- What are some common applications for this device?
Common applications include automotive systems, industrial control systems, consumer electronics, and embedded systems.
