Overview
The M29W128GL60ZA6E is a 128Mb 3V Embedded Parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is part of the M29W series, which utilizes 90nm single-level cell (SLC) technology. It is designed for applications requiring high performance, reliability, and low power consumption. The device defaults to read array mode upon power-up and supports asynchronous random and page read operations from all blocks of the array.
Key Specifications
| Parameter | Value |
|---|---|
| Memory Size | 128Mb (16M x 8, 8M x 16) |
| Memory Interface | Parallel |
| Supply Voltage (VCC) | 2.7–3.6V |
| Supply Voltage (VCCQ) for I/O buffers | 1.65–3.6V |
| VPPH for fast program | 12V (optional) |
| Random Access Time | 60ns, 70ns, 80ns |
| Page Access Time | 25ns, 30ns |
| Program Time per Byte/Word | 16µs (typical) |
| Chip Program Time | 5s with VPPH, 8s without VPPH |
| Memory Organization | 128 main blocks, 128-Kbytes or 64-Kwords each |
| Package | 64-ball TBGA (ZA), 10mm x 13mm, 1mm pitch |
| Temperature Range | –40°C to +125°C (automotive grade certified) |
| Program/Erase Cycles per Block | Minimum 100,000 cycles |
Key Features
- Asynchronous random and page read operations
- Fast program commands: 32-word (64-byte) write buffer and enhanced buffered program commands for 256 words
- Program/erase suspend and resume capability
- Unlock bypass, block erase, chip erase, write to buffer, and enhanced buffer program commands
- VPP/WP# pin protection and software protection (volatile, nonvolatile, and password protection)
- Extended memory block for permanent, secure identification
- Common flash interface with 64-bit security code
- Low power consumption in standby and automatic modes
- RoHS compliant packages
- Automotive device grade temperature range: –40°C to +125°C
Applications
The M29W128GL60ZA6E is suitable for a variety of applications that require reliable, high-performance flash memory. These include:
- Automotive systems: Due to its automotive grade temperature range and reliability, it is ideal for use in automotive electronics.
- Industrial control systems: Its robustness and low power consumption make it a good fit for industrial control and automation systems.
- Consumer electronics: It can be used in various consumer electronic devices that require non-volatile memory.
- Embedded systems: The device is well-suited for embedded systems requiring fast read and write operations.
Q & A
- What is the memory size of the M29W128GL60ZA6E?
The memory size is 128Mb, organized as 16M x 8 or 8M x 16. - What is the supply voltage range for this device?
The supply voltage (VCC) range is 2.7–3.6V, and for I/O buffers (VCCQ), it is 1.65–3.6V. - What are the random access times for this device?
The random access times are 60ns, 70ns, and 80ns. - How many program/erase cycles can each block withstand?
Each block can withstand a minimum of 100,000 program/erase cycles. - What are the package options available for this device?
The device is available in a 64-ball TBGA (ZA) package, 10mm x 13mm, with a 1mm pitch. - What is the temperature range for this device?
The device is certified for an automotive grade temperature range of –40°C to +125°C. - Does the device support fast programming?
Yes, the device supports fast programming with an optional VPPH of 12V. - What protection mechanisms are available for this device?
The device features VPP/WP# pin protection and software protection, including volatile, nonvolatile, and password protection. - Is the device RoHS compliant?
Yes, the device is available in RoHS compliant packages. - What is the purpose of the extended memory block?
The extended memory block is for permanent, secure identification and can be programmed and protected to secure its contents.
