Overview
The MT40A512M16LY-062E AAT:E TR is a DDR4 SDRAM component manufactured by Micron Technology Inc. This dynamic random access memory (DRAM) chip is designed to meet the high-performance requirements of modern computing and storage systems. With its 8Gbit density and 512M x 16bit memory configuration, it offers robust memory capabilities. The component operates at a clock frequency of 1.6 GHz and is housed in a 96-pin TFBGA package, ensuring efficient data transfer and storage.
Key Specifications
| Parameter | Value |
|---|---|
| DRAM Type | DDR4 SDRAM |
| DRAM Density | 8 Gbit |
| Memory Configuration | 512M x 16bit |
| Clock Frequency | 1.6 GHz |
| Memory Case Style | 96-Pin TFBGA |
| No. of Pins | 96 |
| Supply Voltage Nom | 1.2V ±60mV |
| Access Time | 625ps |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at 85°C to 95°C, 16ms at 95°C to 105°C, 8ms at 105°C to 125°C |
| Internal Banks | 16 internal banks (x8): 4 groups of 4 banks each; 8 internal banks (x16): 2 groups of 4 banks each |
| Prefetch Architecture | 8n-bit prefetch architecture |
| RoHS Compliance | Yes |
Key Features
- On-die, internal, adjustable VREFDQ generation
- 1.2V pseudo open-drain I/O
- Programmable data strobe preambles and data strobe preamble training
- Command/Address latency (CAL)
- Multipurpose register read and write capability
- Write leveling
- Self refresh mode and low-power auto self refresh (LPASR)
- Temperature controlled refresh (TCR) and fine granularity refresh
- Self refresh abort and maximum power saving
- Output driver calibration and nominal, park, and dynamic on-die termination (ODT)
- Data bus inversion (DBI) for data bus and command/address (CA) parity
- Databus write cyclic redundancy check (CRC) and per-DRAM addressability
- Connectivity test and JEDEC JESD-79-4 compliance
- sPPR and hPPR capability, MBIST-PPR support (Die Revision R only)
- AEC-Q100 and PPAP submission
Applications
The MT40A512M16LY-062E AAT:E TR is suitable for a wide range of applications requiring high-performance memory, including:
- Server and data center systems
- Cloud computing infrastructure
- High-performance computing (HPC) environments
- Enterprise storage systems
- Embedded systems requiring robust memory capabilities
Q & A
- What is the memory configuration of the MT40A512M16LY-062E AAT:E TR?
The memory configuration is 512M x 16bit.
- What is the clock frequency of this DRAM component?
The clock frequency is 1.6 GHz.
- What is the package type and pin count of this component?
The package type is 96-Pin TFBGA.
- What is the supply voltage for this DRAM?
The supply voltage is 1.2V ±60mV.
- Is the MT40A512M16LY-062E AAT:E TR RoHS compliant?
Yes, it is RoHS compliant.
- What are the refresh times for different temperature ranges?
The refresh times are 64ms at -40°C to 85°C, 32ms at 85°C to 95°C, 16ms at 95°C to 105°C, and 8ms at 105°C to 125°C.
- Does this component support self refresh mode?
Yes, it supports self refresh mode and low-power auto self refresh (LPASR).
- What are some of the advanced features of this DRAM component?
It includes features such as on-die VREFDQ generation, programmable data strobe preambles, command/address latency, and output driver calibration.
- Is the MT40A512M16LY-062E AAT:E TR suitable for automotive applications?
Yes, it is AEC-Q100 compliant, making it suitable for automotive applications.
- What are the typical applications for this DRAM component?
It is used in server and data center systems, cloud computing infrastructure, high-performance computing environments, and enterprise storage systems.
