Overview
The M29W128GL70N3E is a 128Mb 3V Embedded Parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is built on 90nm single-level cell (SLC) technology and is designed for high-performance and reliability in various applications. It operates with a single low-voltage supply and defaults to read array mode upon power-up. The device is well-suited for systems requiring non-volatile memory with fast read and write capabilities.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | M29W128GL70N3E |
| Manufacturer | Micron Technology Inc. |
| Description | IC FLASH 128MBIT 70NS 56TSOP |
| Memory Type | Non-Volatile, Parallel NOR Flash |
| Memory Size | 128Mb (16M x 8, 8M x 16) |
| Supply Voltage | 2.7 V ~ 3.6 V |
| Interface | Parallel |
| Speed | 70ns |
| Package / Case | 56-TSOP (0.724", 18.40mm Width) |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Program/Erase Cycles | Minimum 100,000 per block |
Key Features
- Asynchronous Random and Page Read: Supports fast read operations from all blocks of the array with page sizes of 8 words or 16 bytes.
- Fast Program Commands: Includes 32-word (64-byte) and enhanced buffered program commands for improved throughput.
- Program/Erase Controller: Embedded on-chip controller simplifies programming and erasing operations.
- Program/Erase Suspend and Resume: Allows reading from any block during a program suspend operation and reading or programming another block during an erase suspend operation.
- Hardware and Software Protection: Features unlock bypass, block erase, chip erase, write to buffer, and enhanced buffer program commands, along with volatile, nonvolatile, and password protection.
- Extended Memory Block: Includes a 128-word (256-byte) memory block for permanent, secure identification.
- Low Power Consumption: Offers standby and automatic power-saving modes.
- RoHS Compliant Packages: Available in 56-pin TSOP, 64-ball TBGA, and 64-ball FBGA packages.
Applications
The M29W128GL70N3E is suitable for a wide range of applications, including:
- Automotive Systems: Certified for automotive grade temperatures (-40°C to +125°C), making it ideal for use in vehicles.
- Industrial Control Systems: Used in industrial control systems that require reliable and fast non-volatile memory.
- Consumer Electronics: Found in various consumer electronics such as set-top boxes, gaming consoles, and other devices requiring high-performance flash memory.
- Embedded Systems: Commonly used in embedded systems that need fast read and write capabilities and secure data storage.
Q & A
- What is the memory size of the M29W128GL70N3E?
The memory size is 128Mb, organized as 16M x 8 or 8M x 16.
- What is the operating voltage range of the M29W128GL70N3E?
The operating voltage range is 2.7 V to 3.6 V.
- What is the access time for the M29W128GL70N3E?
The access time is 70ns.
- What types of packages are available for the M29W128GL70N3E?
The device is available in 56-pin TSOP, 64-ball TBGA, and 64-ball FBGA packages.
- Does the M29W128GL70N3E support fast program commands?
- What is the temperature range for the M29W128GL70N3E?
The operating temperature range is -40°C to +125°C.
- How many program/erase cycles does the M29W128GL70N3E support per block?
The device supports a minimum of 100,000 program/erase cycles per block.
- Does the M29W128GL70N3E have any hardware and software protection features?
- Is the M29W128GL70N3E RoHS compliant?
- What is the purpose of the extended memory block in the M29W128GL70N3E?
The extended memory block is a 128-word (256-byte) space for permanent, secure identification.
