M29W128GL70N3E
  • Share:

Micron Technology Inc. M29W128GL70N3E

Manufacturer No:
M29W128GL70N3E
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 128MBIT PARALLEL 56TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The M29W128GL70N3E is a 128Mb 3V Embedded Parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is built on 90nm single-level cell (SLC) technology and is designed for high-performance and reliability in various applications. It operates with a single low-voltage supply and defaults to read array mode upon power-up. The device is well-suited for systems requiring non-volatile memory with fast read and write capabilities.

Key Specifications

Parameter Value
Part Number M29W128GL70N3E
Manufacturer Micron Technology Inc.
Description IC FLASH 128MBIT 70NS 56TSOP
Memory Type Non-Volatile, Parallel NOR Flash
Memory Size 128Mb (16M x 8, 8M x 16)
Supply Voltage 2.7 V ~ 3.6 V
Interface Parallel
Speed 70ns
Package / Case 56-TSOP (0.724", 18.40mm Width)
Operating Temperature -40°C ~ 125°C (TA)
Program/Erase Cycles Minimum 100,000 per block

Key Features

  • Asynchronous Random and Page Read: Supports fast read operations from all blocks of the array with page sizes of 8 words or 16 bytes.
  • Fast Program Commands: Includes 32-word (64-byte) and enhanced buffered program commands for improved throughput.
  • Program/Erase Controller: Embedded on-chip controller simplifies programming and erasing operations.
  • Program/Erase Suspend and Resume: Allows reading from any block during a program suspend operation and reading or programming another block during an erase suspend operation.
  • Hardware and Software Protection: Features unlock bypass, block erase, chip erase, write to buffer, and enhanced buffer program commands, along with volatile, nonvolatile, and password protection.
  • Extended Memory Block: Includes a 128-word (256-byte) memory block for permanent, secure identification.
  • Low Power Consumption: Offers standby and automatic power-saving modes.
  • RoHS Compliant Packages: Available in 56-pin TSOP, 64-ball TBGA, and 64-ball FBGA packages.

Applications

The M29W128GL70N3E is suitable for a wide range of applications, including:

  • Automotive Systems: Certified for automotive grade temperatures (-40°C to +125°C), making it ideal for use in vehicles.
  • Industrial Control Systems: Used in industrial control systems that require reliable and fast non-volatile memory.
  • Consumer Electronics: Found in various consumer electronics such as set-top boxes, gaming consoles, and other devices requiring high-performance flash memory.
  • Embedded Systems: Commonly used in embedded systems that need fast read and write capabilities and secure data storage.

Q & A

  1. What is the memory size of the M29W128GL70N3E?

    The memory size is 128Mb, organized as 16M x 8 or 8M x 16.

  2. What is the operating voltage range of the M29W128GL70N3E?

    The operating voltage range is 2.7 V to 3.6 V.

  3. What is the access time for the M29W128GL70N3E?

    The access time is 70ns.

  4. What types of packages are available for the M29W128GL70N3E?

    The device is available in 56-pin TSOP, 64-ball TBGA, and 64-ball FBGA packages.

  5. Does the M29W128GL70N3E support fast program commands?
  6. What is the temperature range for the M29W128GL70N3E?

    The operating temperature range is -40°C to +125°C.

  7. How many program/erase cycles does the M29W128GL70N3E support per block?

    The device supports a minimum of 100,000 program/erase cycles per block.

  8. Does the M29W128GL70N3E have any hardware and software protection features?
  9. Is the M29W128GL70N3E RoHS compliant?
  10. What is the purpose of the extended memory block in the M29W128GL70N3E?

    The extended memory block is a 128-word (256-byte) space for permanent, secure identification.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NOR
Memory Size:128Mb (16M x 8, 8M x 16)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:70ns
Access Time:70 ns
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 125°C (TA)
Mounting Type:Surface Mount
Package / Case:56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:56-TSOP
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Same Series
M29W128GL70N6E
M29W128GL70N6E
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GL70ZA6E
M29W128GL70ZA6E
IC FLASH 128MBIT PARALLEL 64TBGA
M29W128GL70N6F TR
M29W128GL70N6F TR
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GH70N6F TR
M29W128GH70N6F TR
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GH70N3F TR
M29W128GH70N3F TR
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GL70ZS6F TR
M29W128GL70ZS6F TR
IC FLASH 128MBIT PARALLEL 64FBGA
M29W128GH60ZA6E
M29W128GH60ZA6E
IC FLASH 128MBIT PARALLEL 64TBGA
M29W128GH70ZS3E
M29W128GH70ZS3E
IC FLASH 128MBIT PARALLEL 64FBGA
M29W128GH7AN6E
M29W128GH7AN6E
IC FLASH 128MBIT PARALLEL 56TSOP
M29W128GH7AZA6E
M29W128GH7AZA6E
IC FLASH 128MBIT PARALLEL 64TBGA
M29W128GL60ZA6E
M29W128GL60ZA6E
IC FLASH 128MBIT PARALLEL 64TBGA
M29W128GL70ZS3E
M29W128GL70ZS3E
IC FLASH 128MBIT PARALLEL 64FBGA

Related Product By Categories

CAT24C04YI-GT3
CAT24C04YI-GT3
onsemi
IC EEPROM 4KBIT I2C 8TSSOP
MX25L6406EM2I-12G
MX25L6406EM2I-12G
Macronix
IC FLASH 64MBIT SPI 86MHZ 8SOP
MT29F8G08ABACAWP-IT:C
MT29F8G08ABACAWP-IT:C
Micron Technology Inc.
IC FLASH 8GBIT PARALLEL 48TSOP I
AT24C02D-STUM-T
AT24C02D-STUM-T
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ SOT23-5
M24C01-WMN6TP/S
M24C01-WMN6TP/S
STMicroelectronics
IC EEPROM 1KBIT I2C 400KHZ 8SO
CAT24C16WI-GT3
CAT24C16WI-GT3
onsemi
IC EEPROM 16KBIT I2C 8SOIC
MT40A1G8SA-075:E TR
MT40A1G8SA-075:E TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 78FBGA
M28W320FCB70N6E
M28W320FCB70N6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
CAT25080YI-GT3JN
CAT25080YI-GT3JN
onsemi
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
AT45DB041D-SU-SL954
AT45DB041D-SU-SL954
Adesto Technologies
IC FLASH 4MBIT SPI 66MHZ 8SOIC
MT41K256M16HA-125 M AIT:E
MT41K256M16HA-125 M AIT:E
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K128M16JT-125 M:K TR
MT41K128M16JT-125 M:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA

Related Product By Brand

MT29F2G16ABAEAWP-AIT:E
MT29F2G16ABAEAWP-AIT:E
Micron Technology Inc.
IC FLASH 2GBIT PARALLEL 48TSOP I
MT41K256M16TW-107:P TR
MT41K256M16TW-107:P TR
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K128M16JT-125 AAT:K TR
MT41K128M16JT-125 AAT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AUT:P
MT41K256M16TW-107 AUT:P
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 96FBGA
MTFC32GAZAQHD-IT
MTFC32GAZAQHD-IT
Micron Technology Inc.
IC FLASH 32GBIT MMC 153TFBGA
M29W160ET70ZA6F TR
M29W160ET70ZA6F TR
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TFBGA
M25P16-VMC6TG TR
M25P16-VMC6TG TR
Micron Technology Inc.
IC FLSH 16MBIT SPI 75MHZ 8UFDFPN
M29W128GL90N6E
M29W128GL90N6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP
M25P32-VMW6GBA
M25P32-VMW6GBA
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
MT47H32M16NF-25E:H
MT47H32M16NF-25E:H
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
M25P32-VMW3GB TR
M25P32-VMW3GB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
MT28EW01GABA1HJS-0SIT
MT28EW01GABA1HJS-0SIT
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 56TSOP