Overview
The MT40A512M16LY-062E AAT:E is a high-performance DDR4 SDRAM component manufactured by Micron Technology Inc. This memory module is designed to meet the demanding requirements of modern computing systems, including those used in AI, IoT, self-driving cars, and other advanced technologies. With its robust specifications and features, it is well-suited for a wide range of applications that require high-speed data access and reliable memory performance.
Key Specifications
| Specification | Value |
|---|---|
| DRAM Type | DDR4 SDRAM |
| DRAM Density | 8 Gbit |
| DRAM Memory Configuration | 512M x 16bit |
| Clock Frequency | 1.6 GHz |
| Memory Case Style | TFBGA (96 Pins) |
| Supply Voltage Nom | 1.2V ±60mV |
| Access Time | 625 ps |
| Operating Temperature Range | -40°C to 105°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at 85°C to 95°C, 16ms at 95°C to 105°C, 8ms at 105°C to 125°C |
| Internal Banks | 16 internal banks (x8): 4 groups of 4 banks each; 8 internal banks (x16): 2 groups of 4 banks each |
| Prefetch Architecture | 8n-bit prefetch architecture |
| RoHS Compliance | Yes |
Key Features
- On-die, internal, adjustable VREFDQ generation
- 1.2V pseudo open-drain I/O
- Programmable data strobe preambles and data strobe preamble training
- Command/Address latency (CAL) and multipurpose register read and write capability
- Write leveling, self refresh mode, and low-power auto self refresh (LPASR)
- Temperature controlled refresh (TCR) and fine granularity refresh
- Self refresh abort and maximum power saving
- Output driver calibration and nominal, park, and dynamic on-die termination (ODT)
- Data bus inversion (DBI) for data bus and command/address (CA) parity
- Databus write cyclic redundancy check (CRC) and per-DRAM addressability
- Connectivity test and JEDEC JESD-79-4 compliance
- sPPR and hPPR capability, MBIST-PPR support (Die Revision R only)
- AEC-Q100 and PPAP submission
Applications
The MT40A512M16LY-062E AAT:E DDR4 SDRAM is suitable for a variety of applications, including but not limited to:
- High-performance computing systems
- Artificial Intelligence (AI) and Machine Learning (ML) platforms
- Internet of Things (IoT) devices
- Automotive systems, including self-driving cars
- Space exploration and aerospace applications
- Server and data center infrastructure
Q & A
- What is the DRAM type of the MT40A512M16LY-062E AAT:E?
The DRAM type is DDR4 SDRAM. - What is the memory configuration of this component?
The memory configuration is 512M x 16bit. - What is the clock frequency of this DDR4 SDRAM?
The clock frequency is 1.6 GHz. - What is the supply voltage for this component?
The supply voltage is 1.2V ±60mV. - Is the MT40A512M16LY-062E AAT:E RoHS compliant?
Yes, it is RoHS compliant. - What are the operating temperature ranges for this component?
The operating temperature ranges are -40°C to 105°C. - What are some key features of this DDR4 SDRAM?
Key features include on-die VREFDQ generation, pseudo open-drain I/O, programmable data strobe preambles, and various power-saving modes. - What are some typical applications for this component?
Typical applications include high-performance computing, AI, IoT, automotive systems, and aerospace applications. - Does this component support self refresh mode?
Yes, it supports self refresh mode and low-power auto self refresh (LPASR). - Is the MT40A512M16LY-062E AAT:E compliant with JEDEC standards?
Yes, it is compliant with JEDEC JESD-79-4 standards.
