MT41K256M16TW-107 AAT:P TR
  • Share:

Micron Technology Inc. MT41K256M16TW-107 AAT:P TR

Manufacturer No:
MT41K256M16TW-107 AAT:P TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 4GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT41K256M16TW-107 AAT:P TR is a DDR3L SDRAM module manufactured by Micron Technology Inc. This component is designed to provide high-density memory solutions with low power consumption. The DDR3L architecture operates at 1.35V, making it an energy-efficient option for various applications. The module features a 256 Meg x 16 configuration, supporting a data rate of 1866 MT/s and a clock cycle time of 1.07 ns.

Key Specifications

Parameter Value
Memory Type DDR3L SDRAM
Memory Size 4 Gbit (256 M x 16)
Package Type 96-ball TFBGA
Supply Voltage (VDD/VDDQ) 1.35V (1.283 to 1.45V), backward compatible to 1.5V ±0.075V
Clock Frequency 933 MHz
Clock Cycle Time (tCK) 1.07 ns
CAS Latency (CL) 13
Row Address 32K (A[14:0])
Bank Address 8 (BA[2:0])
Column Address 1K (A[9:0])
Page Size 2KB
Refresh Count 8K
Operating Temperature -40°C to 105°C

Key Features

  • Differential bidirectional data strobe (DQS, DQS#)
  • Differential clock inputs (CK, CK#)
  • 8n-bit prefetch architecture
  • 8 internal banks
  • Self refresh mode
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS latency, programmable posted CAS additive latency
  • Backward compatible with 1.5V DDR3 applications

Applications

The MT41K256M16TW-107 AAT:P TR is suitable for a wide range of applications requiring high-density and low-power memory solutions. These include:

  • Automotive systems
  • Industrial control systems
  • Embedded systems
  • Server and storage systems
  • Consumer electronics requiring high memory density and low power consumption

Q & A

  1. What is the memory configuration of the MT41K256M16TW-107 AAT:P TR?

    The memory configuration is 256 Meg x 16.

  2. What is the operating voltage of this DDR3L SDRAM?

    The operating voltage is 1.35V (1.283 to 1.45V), with backward compatibility to 1.5V ±0.075V.

  3. What is the clock cycle time (tCK) of this module?

    The clock cycle time (tCK) is 1.07 ns.

  4. How many internal banks does this SDRAM have?

    This SDRAM has 8 internal banks.

  5. What is the refresh count for this module?

    The refresh count is 8K.

  6. What is the operating temperature range of the MT41K256M16TW-107 AAT:P TR?

    The operating temperature range is -40°C to 105°C.

  7. Does this module support self refresh mode?
  8. What type of package does this module use?

    The module uses a 96-ball TFBGA package.

  9. Is this module RoHS compliant?
  10. What is the data rate of this DDR3L SDRAM?

    The data rate is 1866 MT/s.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR3L
Memory Size:4Gb (256M x 16)
Memory Interface:Parallel
Clock Frequency:933 MHz
Write Cycle Time - Word, Page:- 
Access Time:20 ns
Voltage - Supply:1.283V ~ 1.45V
Operating Temperature:-40°C ~ 105°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (8x14)
0 Remaining View Similar

In Stock

$13.37
30

Please send RFQ , we will respond immediately.

Same Series
MT41K512M8DA-107 AIT:P TR
MT41K512M8DA-107 AIT:P TR
IC DRAM 4GBIT PARALLEL 78FBGA
MT41K512M8DA-107 AIT:P
MT41K512M8DA-107 AIT:P
IC DRAM 4GBIT PARALLEL 78FBGA
MT41K512M8DA-107 AAT:P
MT41K512M8DA-107 AAT:P
IC DRAM 4GBIT PARALLEL 78FBGA
MT41K512M8DA-107 AAT:P TR
MT41K512M8DA-107 AAT:P TR
IC DRAM 4GBIT PARALLEL 78FBGA
MT41K256M16TW-107 AAT:P TR
MT41K256M16TW-107 AAT:P TR
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AIT:P
MT41K256M16TW-107 AIT:P
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AIT:P TR
MT41K256M16TW-107 AIT:P TR
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AUT:P
MT41K256M16TW-107 AUT:P
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AUT:P TR
MT41K256M16TW-107 AUT:P TR
IC DRAM 4GBIT PARALLEL 96FBGA

Similar Products

Part Number MT41K256M16TW-107 AAT:P TR MT41K256M16TW-107 AIT:P TR MT41K256M16TW-107 AUT:P TR MT41K256M16TW-107 AT:P TR
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Active Active Active Obsolete
Memory Type Volatile Volatile Volatile Volatile
Memory Format DRAM DRAM DRAM DRAM
Technology SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L
Memory Size 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (256M x 16)
Memory Interface Parallel Parallel Parallel Parallel
Clock Frequency 933 MHz 933 MHz 933 MHz 933 MHz
Write Cycle Time - Word, Page - - - -
Access Time 20 ns 20 ns 20 ns 20 ns
Voltage - Supply 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V
Operating Temperature -40°C ~ 105°C (TC) -40°C ~ 95°C (TC) -40°C ~ 125°C (TC) -40°C ~ 95°C (TC)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 96-TFBGA 96-TFBGA 96-TFBGA 96-TFBGA
Supplier Device Package 96-FBGA (8x14) 96-FBGA (8x14) 96-FBGA (9x14) 96-FBGA (8x14)

Related Product By Categories

M48Z35Y-70MH1F
M48Z35Y-70MH1F
STMicroelectronics
IC NVSRAM 256KBIT PARALLEL 28SOH
24LC16BT-I/OT
24LC16BT-I/OT
Microchip Technology
IC EEPROM 16KBIT I2C SOT23-5
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
MT25QU256ABA1EW7-0SIT TR
MT25QU256ABA1EW7-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
AT24C02-10PC-2.7
AT24C02-10PC-2.7
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
M27C512-70C6
M27C512-70C6
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M93C46-MN6T
M93C46-MN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
AT45DB321D-SU-2.5-SL383
AT45DB321D-SU-2.5-SL383
Adesto Technologies
IC FLASH 32MBIT SPI 50MHZ 8SOIC
CAT25640VI-GT3JN
CAT25640VI-GT3JN
onsemi
IC EEPROM 64KBIT SPI 20MHZ 8SOIC
FM25CL64B-GTR
FM25CL64B-GTR
Infineon Technologies
IC FRAM 64KBIT SPI 20MHZ 8SOIC
S29AL016J70TFI020
S29AL016J70TFI020
Infineon Technologies
IC FLASH 16MBIT PARALLEL 48TSOP

Related Product By Brand

MT48LC16M16A2P-6A IT:G TR
MT48LC16M16A2P-6A IT:G TR
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
MT53D512M32D2DS-053 AAT:D TR
MT53D512M32D2DS-053 AAT:D TR
Micron Technology Inc.
IC DRAM 16GBIT 1866MHZ 200WFBGA
MT41J128M16JT-125:K TR
MT41J128M16JT-125:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT29F4G08ABADAWP:D
MT29F4G08ABADAWP:D
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL 48TSOP I
M29W400BB90N6
M29W400BB90N6
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29F800DB70N6T TR
M29F800DB70N6T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M29W800DB45ZE6E
M29W800DB45ZE6E
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TFBGA
M25P16-VMN6PBA
M25P16-VMN6PBA
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M25P16-VMN6TPBA TR
M25P16-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
MT47H32M16NF-25E:H
MT47H32M16NF-25E:H
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 84FBGA
MT53D1024M32D4DT-046 AUT:D TR
MT53D1024M32D4DT-046 AUT:D TR
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 200VFBGA
MTFC8GAMALBH-AIT ES
MTFC8GAMALBH-AIT ES
Micron Technology Inc.
IC FLASH 64GBIT MMC 153TFBGA