MT41K256M16TW-107 AAT:P TR
  • Share:

Micron Technology Inc. MT41K256M16TW-107 AAT:P TR

Manufacturer No:
MT41K256M16TW-107 AAT:P TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 4GBIT PARALLEL 96FBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT41K256M16TW-107 AAT:P TR is a DDR3L SDRAM module manufactured by Micron Technology Inc. This component is designed to provide high-density memory solutions with low power consumption. The DDR3L architecture operates at 1.35V, making it an energy-efficient option for various applications. The module features a 256 Meg x 16 configuration, supporting a data rate of 1866 MT/s and a clock cycle time of 1.07 ns.

Key Specifications

Parameter Value
Memory Type DDR3L SDRAM
Memory Size 4 Gbit (256 M x 16)
Package Type 96-ball TFBGA
Supply Voltage (VDD/VDDQ) 1.35V (1.283 to 1.45V), backward compatible to 1.5V ±0.075V
Clock Frequency 933 MHz
Clock Cycle Time (tCK) 1.07 ns
CAS Latency (CL) 13
Row Address 32K (A[14:0])
Bank Address 8 (BA[2:0])
Column Address 1K (A[9:0])
Page Size 2KB
Refresh Count 8K
Operating Temperature -40°C to 105°C

Key Features

  • Differential bidirectional data strobe (DQS, DQS#)
  • Differential clock inputs (CK, CK#)
  • 8n-bit prefetch architecture
  • 8 internal banks
  • Self refresh mode
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS latency, programmable posted CAS additive latency
  • Backward compatible with 1.5V DDR3 applications

Applications

The MT41K256M16TW-107 AAT:P TR is suitable for a wide range of applications requiring high-density and low-power memory solutions. These include:

  • Automotive systems
  • Industrial control systems
  • Embedded systems
  • Server and storage systems
  • Consumer electronics requiring high memory density and low power consumption

Q & A

  1. What is the memory configuration of the MT41K256M16TW-107 AAT:P TR?

    The memory configuration is 256 Meg x 16.

  2. What is the operating voltage of this DDR3L SDRAM?

    The operating voltage is 1.35V (1.283 to 1.45V), with backward compatibility to 1.5V ±0.075V.

  3. What is the clock cycle time (tCK) of this module?

    The clock cycle time (tCK) is 1.07 ns.

  4. How many internal banks does this SDRAM have?

    This SDRAM has 8 internal banks.

  5. What is the refresh count for this module?

    The refresh count is 8K.

  6. What is the operating temperature range of the MT41K256M16TW-107 AAT:P TR?

    The operating temperature range is -40°C to 105°C.

  7. Does this module support self refresh mode?
  8. What type of package does this module use?

    The module uses a 96-ball TFBGA package.

  9. Is this module RoHS compliant?
  10. What is the data rate of this DDR3L SDRAM?

    The data rate is 1866 MT/s.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR3L
Memory Size:4Gb (256M x 16)
Memory Interface:Parallel
Clock Frequency:933 MHz
Write Cycle Time - Word, Page:- 
Access Time:20 ns
Voltage - Supply:1.283V ~ 1.45V
Operating Temperature:-40°C ~ 105°C (TC)
Mounting Type:Surface Mount
Package / Case:96-TFBGA
Supplier Device Package:96-FBGA (8x14)
0 Remaining View Similar

In Stock

$13.37
30

Please send RFQ , we will respond immediately.

Same Series
MT41K512M8DA-107 AIT:P TR
MT41K512M8DA-107 AIT:P TR
IC DRAM 4GBIT PARALLEL 78FBGA
MT41K512M8DA-107 AIT:P
MT41K512M8DA-107 AIT:P
IC DRAM 4GBIT PARALLEL 78FBGA
MT41K512M8DA-107 AAT:P
MT41K512M8DA-107 AAT:P
IC DRAM 4GBIT PARALLEL 78FBGA
MT41K512M8DA-107 AAT:P TR
MT41K512M8DA-107 AAT:P TR
IC DRAM 4GBIT PARALLEL 78FBGA
MT41K256M16TW-107 AAT:P TR
MT41K256M16TW-107 AAT:P TR
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AIT:P TR
MT41K256M16TW-107 AIT:P TR
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AAT:P
MT41K256M16TW-107 AAT:P
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AUT:P
MT41K256M16TW-107 AUT:P
IC DRAM 4GBIT PARALLEL 96FBGA
MT41K256M16TW-107 AUT:P TR
MT41K256M16TW-107 AUT:P TR
IC DRAM 4GBIT PARALLEL 96FBGA

Similar Products

Part Number MT41K256M16TW-107 AAT:P TR MT41K256M16TW-107 AIT:P TR MT41K256M16TW-107 AUT:P TR MT41K256M16TW-107 AT:P TR
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Active Active Active Obsolete
Memory Type Volatile Volatile Volatile Volatile
Memory Format DRAM DRAM DRAM DRAM
Technology SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L
Memory Size 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (256M x 16)
Memory Interface Parallel Parallel Parallel Parallel
Clock Frequency 933 MHz 933 MHz 933 MHz 933 MHz
Write Cycle Time - Word, Page - - - -
Access Time 20 ns 20 ns 20 ns 20 ns
Voltage - Supply 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V 1.283V ~ 1.45V
Operating Temperature -40°C ~ 105°C (TC) -40°C ~ 95°C (TC) -40°C ~ 125°C (TC) -40°C ~ 95°C (TC)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 96-TFBGA 96-TFBGA 96-TFBGA 96-TFBGA
Supplier Device Package 96-FBGA (8x14) 96-FBGA (8x14) 96-FBGA (9x14) 96-FBGA (8x14)

Related Product By Categories

IS62C256AL-45ULI
IS62C256AL-45ULI
ISSI, Integrated Silicon Solution Inc
IC SRAM 256KBIT PARALLEL 28SOP
AS4C32M16SB-7TINTR
AS4C32M16SB-7TINTR
Alliance Memory, Inc.
IC DRAM 512MBIT PAR 54TSOP II
M24C01-WMN6TP/S
M24C01-WMN6TP/S
STMicroelectronics
IC EEPROM 1KBIT I2C 400KHZ 8SO
M95040-DRDW8TP/K
M95040-DRDW8TP/K
STMicroelectronics
IC EEPROM 4KBIT SPI 20MHZ 8TSSOP
MT53D512M32D2DS-053 AUT:D TR
MT53D512M32D2DS-053 AUT:D TR
Micron Technology Inc.
IC DRAM 16GBIT 1.866GHZ 200WFBGA
M29F400BB70N6T TR
M29F400BB70N6T TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29F010B70K6F TR
M29F010B70K6F TR
Micron Technology Inc.
IC FLASH 1MBIT PARALLEL 32PLCC
M25P32-VME6G
M25P32-VME6G
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8VDFPN
M29F080D70N6E
M29F080D70N6E
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 40TSOP
M29W128FL70ZA6E
M29W128FL70ZA6E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64TBGA
M25PE16-VMW6G
M25PE16-VMW6G
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
PCF85102C-2T/03:11
PCF85102C-2T/03:11
NXP USA Inc.
IC EEPROM 2KBIT I2C 100KHZ 8SO

Related Product By Brand

MT53D512M32D2DS-053 WT:D
MT53D512M32D2DS-053 WT:D
Micron Technology Inc.
IC DRAM 16GBIT 1866MHZ 200WFBGA
MT40A512M16LY-062E AAT:E TR
MT40A512M16LY-062E AAT:E TR
Micron Technology Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
MTFC32GAZAQHD-IT TR
MTFC32GAZAQHD-IT TR
Micron Technology Inc.
IC FLASH 32GBIT MMC 153TFBGA
M25P40-VMN6
M25P40-VMN6
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8SO
M29F040B70K6
M29F040B70K6
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
NAND512W3A2CZA6E
NAND512W3A2CZA6E
Micron Technology Inc.
IC FLSH 512MBIT PARALLEL 63VFBGA
M25P16-VMN3PB
M25P16-VMN3PB
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M29W128GL7AN6F TR
M29W128GL7AN6F TR
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 56TSOP
MT41J128M16JT-093:K
MT41J128M16JT-093:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M25P32-VMW3TGB TR
M25P32-VMW3TGB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
M29W128GL7AZS6F TR
M29W128GL7AZS6F TR
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA
MT25QL128ABA8E12-0AAT
MT25QL128ABA8E12-0AAT
Micron Technology Inc.
IC FLASH 128MBIT SPI 24TPBGA