Overview
The M29W128GL7AZA6E is a high-performance, versatile memory device designed by Micron Technology Inc. for various applications requiring reliable storage solutions. This 128Mb flash memory IC offers a robust option for data storage in both consumer and industrial sectors. Its advanced architecture enables efficient read and write operations, making it suitable for code storage in embedded systems, programmable logic devices, and more. The device is built using state-of-the-art manufacturing techniques to ensure high quality, durability, and longevity.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Part Number | M29W128GL7AZA6E |
| Memory Type | Non-Volatile, NOR-type Flash Memory |
| Memory Size | 128Mb (16M x 8, 8M x 16) |
| Memory Interface | Parallel |
| Access Time | 70ns |
| Supply Voltage | 2.7V to 3.6V |
| Operating Temperature | -40°C to 85°C (TA) |
| Package | 64-TBGA (10x13) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | Lead Free / RoHS Compliant |
Key Features
- Memory Capacity: 128Mb (16Mb x 8 bits)
- Operation Voltage: 2.7V to 3.6V for read and write operations
- Access Time: Low access time of 70ns
- Flash Memory Technology: NOR-type flash memory offering fast read speeds and easy updating
- Endurance: 100,000 erase/write cycles with guaranteed data retention of 20 years at 125°C
- Data Protection: Built-in security features, including OTP (One-Time Programmable) functionality for critical data
- Low Power Consumption: Optimized for energy efficiency to minimize system power usage
- Program/Erase Controller: Embedded byte/word program algorithms with program/erase suspend and resume capability
- Software Protection: Volatile, nonvolatile, and password protection
Applications
- Embedded Systems
- Consumer Electronics
- Automotive Applications
- Networking Devices
- Industrial Automation Equipment
- Telecommunication Equipment
- Smart Appliances
Q & A
- Q: What is the maximum number of write cycles for the M29W128GL7AZA6E?
A: The M29W128GL7AZA6E supports a minimum of 100,000 erase/write cycles. - Q: Can this device operate at a lower voltage than specified?
A: No, it is recommended to operate within the specified voltage range of 2.7V to 3.6V to ensure reliable operation. - Q: How can I program the M29W128GL7AZA6E?
A: The device can be programmed using standard programming algorithms compatible with NOR flash memory. - Q: Is data retention guaranteed at elevated temperatures?
A: Yes, data retention is guaranteed for at least 20 years at 125°C. - Q: Does the M29W128GL7AZA6E include any data protection features?
A: Yes, it includes OTP functionality to safeguard critical data. - Q: What is the package type of the M29W128GL7AZA6E?
A: The device is packaged in a 64-TBGA (10x13) configuration. - Q: What is the operating temperature range of the M29W128GL7AZA6E?
A: The operating temperature range is -40°C to 85°C (TA). - Q: Is the M29W128GL7AZA6E RoHS compliant?
A: Yes, the device is lead-free and RoHS compliant. - Q: What is the access time of the M29W128GL7AZA6E?
A: The access time is 70ns. - Q: What are the typical applications of the M29W128GL7AZA6E?
A: Typical applications include embedded systems, consumer electronics, automotive applications, networking devices, industrial automation equipment, telecommunication equipment, and smart appliances.
