Overview
The M29W128GL70ZA6DE is a 128Mb 3V Embedded Parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is built on 90nm single-level cell (SLC) technology and is designed for reliable code storage, including boot code, application code, operating systems, and execute-in-place (XIP) code.
The device operates with a single low-voltage supply and supports asynchronous random and page read operations from all blocks of the array. It features an on-chip program/erase controller that simplifies the programming and erasing process, and it is compatible with JEDEC standards.
Key Specifications
| Specification | Details |
|---|---|
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8, 8M x 16 |
| Memory Interface | Parallel |
| Supply Voltage (VCC) | 2.7–3.6V |
| Supply Voltage (VCCQ) | 1.65–3.6V (I/O buffers) |
| VPPH | 12V for fast program (optional) |
| Access Time | 70ns (typical) |
| Program Time | 16µs per byte/word (typical), 5s with VPPH and 8s without VPPH (chip program time) |
| Package | 64-ball TBGA (ZA) 10mm x 13mm, 1mm pitch |
| Temperature Range | –40°C to +125°C (automotive grade certified) |
| Program/Erase Cycles | Minimum 100,000 cycles per block |
Key Features
- Asynchronous random and page read operations with page sizes of 8 words or 16 bytes.
- Fast program commands: 32-word (64-byte) write buffer and enhanced buffered program commands for 256 words.
- Program/erase controller with suspend and resume capability.
- Unlock bypass, block erase, chip erase, write to buffer, and enhanced buffer program commands.
- VPP/WP# pin protection to protect first or last block regardless of block protection settings.
- Software protection including volatile, nonvolatile, and password protection.
- Extended memory block for permanent, secure identification.
- Common flash interface with 64-bit security code.
- Low power consumption with standby and automatic mode.
- RoHS compliant packages.
Applications
The M29W128GL70ZA6DE is ideal for various applications requiring reliable code storage, such as:
- Boot code storage
- Application code storage
- Operating system storage
- Execute-in-place (XIP) code storage
- Automotive applications (certified to AEC Q100 and Q003 or equivalent)
Q & A
- What is the memory size of the M29W128GL70ZA6DE?
The memory size is 128Mbit.
- What is the memory organization of the device?
The memory is organized as 16M x 8 or 8M x 16.
- What are the supply voltage ranges for VCC and VCCQ?
VCC ranges from 2.7–3.6V, and VCCQ ranges from 1.65–3.6V.
- What is the typical access time for the device?
The typical access time is 70ns.
- How many program/erase cycles can the device handle per block?
The device can handle a minimum of 100,000 program/erase cycles per block.
- What types of protection does the device offer?
The device offers VPP/WP# pin protection, software protection (volatile, nonvolatile, and password protection), and extended memory block for secure identification.
- Is the device RoHS compliant?
- What are the typical applications for this device?
The device is ideal for boot code, application code, operating system, and execute-in-place (XIP) code storage, as well as automotive applications.
- What is the temperature range for the device?
The device operates in a temperature range of –40°C to +125°C (automotive grade certified).
- What package options are available for the M29W128GL70ZA6DE?
The device is available in a 64-ball TBGA (ZA) package with dimensions 10mm x 13mm and a 1mm pitch.
