Overview
The MT41K256M16HA-125 V:E TR is a 4Gbit DDR3L SDRAM module produced by Micron Technology Inc. This component is designed to operate at a lower voltage of 1.35V, making it more energy-efficient compared to the standard DDR3 SDRAM which operates at 1.5V. It is backward compatible with DDR3 devices, allowing it to function in 1.5V applications. The module is packaged in a 96-ball FBGA (Fine-Pitch Ball Grid Array) with dimensions of 9mm x 14mm, making it suitable for a variety of applications requiring high-density memory solutions.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Part Number | MT41K256M16HA-125 V:E TR |
| Memory Type | DRAM (DDR3L SDRAM) |
| Memory Size | 4Gbit (256M x 16) |
| Supply Voltage | 1.283V - 1.45V |
| Operating Temperature | 0°C to +95°C |
| Package | 96-ball FBGA (9mm x 14mm) |
| Speed Grade | 800MHz (DDR3-1600) |
| CAS Latency (CL) | 11 (DDR3-1600) |
| Internal Banks | 8 |
| Refresh Count | 8K |
| Row Address | 32K (A[14:0]) |
| Column Address | 1K (A[9:0]) |
| Page Size | 2KB |
Key Features
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Programmable posted CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
- Fixed burst length (BL) of 8 and burst chop (BC) of 4
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode and automatic self refresh (ASR)
- Write leveling and multipurpose register
- Backward compatibility with DDR3 devices in 1.5V applications
Applications
The MT41K256M16HA-125 V:E TR is suitable for a wide range of applications requiring high-density, low-power memory solutions. These include:
- Server and data center systems
- High-performance computing (HPC) systems
- Embedded systems and industrial applications
- Consumer electronics such as gaming consoles and high-end smartphones
- Automotive systems requiring robust and reliable memory
Q & A
- What is the operating voltage of the MT41K256M16HA-125 V:E TR?
The operating voltage is 1.283V to 1.45V.
- What is the memory size and configuration of this component?
The memory size is 4Gbit, configured as 256M x 16.
- What is the package type and dimensions of the MT41K256M16HA-125 V:E TR?
The package is a 96-ball FBGA with dimensions of 9mm x 14mm.
- Is the MT41K256M16HA-125 V:E TR backward compatible with DDR3 devices?
- What is the speed grade and CAS latency of this component?
The speed grade is 800MHz (DDR3-1600) with a CAS latency (CL) of 11.
- How many internal banks does the MT41K256M16HA-125 V:E TR have?
- What is the refresh count and page size of this component?
The refresh count is 8K, and the page size is 2KB.
- Does the MT41K256M16HA-125 V:E TR support self refresh mode?
- What are some typical applications for the MT41K256M16HA-125 V:E TR?
- What is the operating temperature range of the MT41K256M16HA-125 V:E TR?
