Overview
The MT40A1G16KNR-075:E TR is a 16Gb DDR4 SDRAM component manufactured by Micron Technology Inc. This component utilizes Micron’s TwinDie technology, which combines two 8Gb DDR4 SDRAM dies to form a single 16Gb x16 device. This design ensures compatibility with standard x16 DDR4 SDRAM signals while offering enhanced performance and efficiency. The MT40A1G16KNR-075:E TR is designed to meet the demanding memory requirements of modern computing systems, including servers, data centers, and high-performance computing applications.
Key Specifications
Parameter | Value | Units | Notes |
---|---|---|---|
Capacity | 16Gb | 64 Meg x 16 x 16 banks x 1 rank | |
Package Type | 78-ball FBGA | Pb-free, 9.5mm x 14mm x 1.2mm (Die Rev: E KNR) | |
Voltage | 1.2V | VDD = VDDQ (1.14–1.26V) | |
Operating Temperature | 0°C to 95°C | Commercial temperature range | |
Refresh Cycles | 8192 cycles in 64ms (0°C to 85°C) | 8192 cycles in 32ms (85°C to 95°C) | |
CAS Latency | 18 (DDR4-2666) | ns | CL = 18 at DDR4-2666 speed grade |
Data Rate | 2666 MT/s | MT/s | DDR4-2666 speed grade |
Key Features
- Uses two x8 8Gb Micron die to make one x16 device (TwinDie technology)
- Single rank configuration
- JEDEC-standard ball-out
- Low-profile package
- 1.2V VDDQ-terminated I/O
- Extra ZQ connection for faster ZQ calibration
- BG1 control required for x8 addressing
Applications
The MT40A1G16KNR-075:E TR is suitable for a variety of applications requiring high-density and high-performance memory, including:
- Servers and data centers
- High-performance computing systems
- Cloud infrastructure
- Enterprise storage solutions
- Embedded systems requiring high memory density
Q & A
- What is the capacity of the MT40A1G16KNR-075:E TR?
The capacity is 16Gb, configured as 64 Meg x 16 x 16 banks x 1 rank.
- What is the operating voltage of this component?
The operating voltage is 1.2V (VDD = VDDQ), with a range of 1.14–1.26V.
- What is the package type and size of the MT40A1G16KNR-075:E TR?
The package type is a 78-ball FBGA, with dimensions of 9.5mm x 14mm x 1.2mm (Die Rev: E KNR).
- What are the operating temperature ranges for this component?
The operating temperature range is 0°C to 95°C, with specific refresh cycle requirements for temperatures above 85°C.
- What is the CAS latency for the DDR4-2666 speed grade?
The CAS latency (CL) is 18 for the DDR4-2666 speed grade.
- What is the data rate for the MT40A1G16KNR-075:E TR at its specified speed grade?
The data rate is 2666 MT/s for the DDR4-2666 speed grade.
- What technology is used in the MT40A1G16KNR-075:E TR to achieve its configuration?
Micron’s TwinDie technology is used, combining two x8 8Gb dies to form a single x16 device.
- What are some key applications for this component?
Key applications include servers, data centers, high-performance computing systems, cloud infrastructure, and enterprise storage solutions.
- Does the MT40A1G16KNR-075:E TR support self-refresh modes?
No, standard self-refresh modes are not supported; however, external refresh at specific intervals may be required at higher temperatures.
- What are the refresh cycle requirements for different temperature ranges?
8192 refresh cycles in 64ms for temperatures between 0°C to 85°C, and 8192 cycles in 32ms for temperatures between 85°C to 95°C.