MT40A1G16KNR-075:E TR
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Micron Technology Inc. MT40A1G16KNR-075:E TR

Manufacturer No:
MT40A1G16KNR-075:E TR
Manufacturer:
Micron Technology Inc.
Package:
Tape & Reel (TR)
Description:
IC DRAM 16GBIT PAR 96FBGA
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The MT40A1G16KNR-075:E TR is a 16Gb DDR4 SDRAM component manufactured by Micron Technology Inc. This component utilizes Micron’s TwinDie technology, which combines two 8Gb DDR4 SDRAM dies to form a single 16Gb x16 device. This design ensures compatibility with standard x16 DDR4 SDRAM signals while offering enhanced performance and efficiency. The MT40A1G16KNR-075:E TR is designed to meet the demanding memory requirements of modern computing systems, including servers, data centers, and high-performance computing applications.

Key Specifications

Parameter Value Units Notes
Capacity 16Gb 64 Meg x 16 x 16 banks x 1 rank
Package Type 78-ball FBGA Pb-free, 9.5mm x 14mm x 1.2mm (Die Rev: E KNR)
Voltage 1.2V VDD = VDDQ (1.14–1.26V)
Operating Temperature 0°C to 95°C Commercial temperature range
Refresh Cycles 8192 cycles in 64ms (0°C to 85°C) 8192 cycles in 32ms (85°C to 95°C)
CAS Latency 18 (DDR4-2666) ns CL = 18 at DDR4-2666 speed grade
Data Rate 2666 MT/s MT/s DDR4-2666 speed grade

Key Features

  • Uses two x8 8Gb Micron die to make one x16 device (TwinDie technology)
  • Single rank configuration
  • JEDEC-standard ball-out
  • Low-profile package
  • 1.2V VDDQ-terminated I/O
  • Extra ZQ connection for faster ZQ calibration
  • BG1 control required for x8 addressing

Applications

The MT40A1G16KNR-075:E TR is suitable for a variety of applications requiring high-density and high-performance memory, including:

  • Servers and data centers
  • High-performance computing systems
  • Cloud infrastructure
  • Enterprise storage solutions
  • Embedded systems requiring high memory density

Q & A

  1. What is the capacity of the MT40A1G16KNR-075:E TR?

    The capacity is 16Gb, configured as 64 Meg x 16 x 16 banks x 1 rank.

  2. What is the operating voltage of this component?

    The operating voltage is 1.2V (VDD = VDDQ), with a range of 1.14–1.26V.

  3. What is the package type and size of the MT40A1G16KNR-075:E TR?

    The package type is a 78-ball FBGA, with dimensions of 9.5mm x 14mm x 1.2mm (Die Rev: E KNR).

  4. What are the operating temperature ranges for this component?

    The operating temperature range is 0°C to 95°C, with specific refresh cycle requirements for temperatures above 85°C.

  5. What is the CAS latency for the DDR4-2666 speed grade?

    The CAS latency (CL) is 18 for the DDR4-2666 speed grade.

  6. What is the data rate for the MT40A1G16KNR-075:E TR at its specified speed grade?

    The data rate is 2666 MT/s for the DDR4-2666 speed grade.

  7. What technology is used in the MT40A1G16KNR-075:E TR to achieve its configuration?

    Micron’s TwinDie technology is used, combining two x8 8Gb dies to form a single x16 device.

  8. What are some key applications for this component?

    Key applications include servers, data centers, high-performance computing systems, cloud infrastructure, and enterprise storage solutions.

  9. Does the MT40A1G16KNR-075:E TR support self-refresh modes?

    No, standard self-refresh modes are not supported; however, external refresh at specific intervals may be required at higher temperatures.

  10. What are the refresh cycle requirements for different temperature ranges?

    8192 refresh cycles in 64ms for temperatures between 0°C to 85°C, and 8192 cycles in 32ms for temperatures between 85°C to 95°C.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR4
Memory Size:16Gb (1G x 16)
Memory Interface:Parallel
Clock Frequency:1.33 GHz
Write Cycle Time - Word, Page:15ns
Access Time:19 ns
Voltage - Supply:1.14V ~ 1.26V
Operating Temperature:0°C ~ 95°C (TC)
Mounting Type:Surface Mount
Package / Case:78-TFBGA
Supplier Device Package:78-FBGA (8x12)
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