Overview
The NAND512W3A2CZA6E is a 512-Mbit NAND flash memory device produced by Micron Technology Inc. This non-volatile memory component utilizes single-level cell (SLC) NAND technology, offering high density and cost-effective solutions for mass storage applications. Although this product is currently obsolete and not recommended for new designs, it remains relevant for existing systems and maintenance purposes.
Key Specifications
| Specification | Value |
|---|---|
| Memory Type | Non-Volatile FLASH - NAND |
| Memory Capacity | 512 Mbit |
| Page Size (x8 device) | 528 bytes + 16 spare bytes |
| Page Size (x16 device) | 256 words + 8 spare words |
| Block Size (x8 device) | 16K bytes + 512 spare bytes |
| Block Size (x16 device) | 8K words + 256 spare words |
| Supply Voltage | 1.8 V, 3 V |
| Random Access Time | 12 µs (3 V), 15 µs (1.8 V) |
| Sequential Access Time | 30 ns (3 V), 50 ns (1.8 V) |
| Page Program Time | 200 µs (typical) |
| Block Erase Time | 2 ms (typical) |
| Program/Erase Cycles | 100,000 cycles (with ECC) |
| Data Retention | 10 years |
| Package Options | TSOP48, VFBGA55, VFBGA63 |
Key Features
- High density NAND flash memories with 512-Mbit memory array.
- NAND interface with x8 or x16 bus width and multiplexed address/data.
- Supply voltage options: 1.8 V and 3 V.
- Fast block erase and page program capabilities.
- Status register and electronic signature for device identification.
- Security features including OTP area and unique serial number option.
- Hardware data protection during power transitions.
- Development tools including error correction code models and bad blocks management.
- RoHS compliant packages.
Applications
The NAND512W3A2CZA6E is suitable for various mass storage applications, including:
- Embedded systems requiring non-volatile memory.
- Industrial control systems and automation.
- Consumer electronics such as set-top boxes and digital TVs.
- Automotive systems and infotainment.
- Medical devices and healthcare equipment.
Q & A
- What is the memory capacity of the NAND512W3A2CZA6E?
The memory capacity is 512 Mbit.
- What are the supply voltage options for this device?
The supply voltage options are 1.8 V and 3 V.
- What is the typical page program time for this device?
The typical page program time is 200 µs.
- How many program/erase cycles does the device support?
The device supports up to 100,000 program/erase cycles with ECC.
- What is the data retention period for this device?
The data retention period is 10 years.
- What package options are available for this device?
The package options include TSOP48, VFBGA55, and VFBGA63.
- Does the device have any security features?
Yes, it includes OTP area, unique serial number option, and hardware data protection during power transitions.
- Is the device RoHS compliant?
Yes, the device is RoHS compliant.
- What are some typical applications for this device?
Typical applications include embedded systems, industrial control systems, consumer electronics, automotive systems, and medical devices.
- Is the NAND512W3A2CZA6E still in production?
No, the NAND512W3A2CZA6E is obsolete and no longer in production.
