MT29F4G08ABADAH4-IT:D
  • Share:

Micron Technology Inc. MT29F4G08ABADAH4-IT:D

Manufacturer No:
MT29F4G08ABADAH4-IT:D
Manufacturer:
Micron Technology Inc.
Package:
Tray
Description:
IC FLASH 4GBIT PARALLEL 63VFBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT29F4G08ABADAH4-IT:D is a 4Gb Single-Level Cell (SLC) NAND Flash memory device manufactured by Micron Technology Inc. This component is designed to provide high reliability and performance in various storage applications. It operates within an industrial temperature range of -40°C to +85°C, making it suitable for demanding environments.

Key Specifications

ParameterValue
Density4Gb
Device Widthx8
Operating Voltage3.3V (2.7–3.6V)
Temperature Range-40°C to +85°C
Package Type63-ball VFBGA (9 x 11 x 1.0mm)
Page Size2112 bytes (2048 + 64 bytes)
Block Size64 pages (128K + 4K bytes)
Plane Size2 planes x 2048 blocks per plane
Read Page Time25µs
Program Page Time200µs (TYP: 1.8V, 3.3V)
Erase Block Time700µs (TYP)

Key Features

  • Open NAND Flash Interface (ONFI) 1.0-compliant
  • Single-Level Cell (SLC) technology for high reliability and endurance
  • Asynchronous I/O performance with tRC/tWC of 20ns (3.3V) and 25ns (1.8V)
  • Advanced command set including program page cache mode, read page cache mode, one-time programmable (OTP) mode, and two-plane commands
  • Internal data move and block lock features
  • Ready/Busy# (R/B#) signal and WP# signal for operation completion and write protection

Applications

The MT29F4G08ABADAH4-IT:D is suitable for a variety of applications requiring high reliability and performance, such as:

  • Industrial control systems
  • Aerospace and defense systems
  • Automotive systems
  • Embedded systems
  • Data storage solutions in harsh environments

Q & A

  1. What is the density of the MT29F4G08ABADAH4-IT:D?
    The density of the MT29F4G08ABADAH4-IT:D is 4Gb.
  2. What is the operating voltage range of this device?
    The operating voltage range is 3.3V (2.7–3.6V).
  3. What is the temperature range for this device?
    The temperature range is -40°C to +85°C.
  4. What type of package does this device use?
    The device uses a 63-ball VFBGA (9 x 11 x 1.0mm) package.
  5. What is the page size of this NAND Flash memory?
    The page size is 2112 bytes (2048 + 64 bytes).
  6. How long does it take to read a page?
    The read page time is 25µs.
  7. What is the program page time for this device?
    The program page time is 200µs (TYP: 1.8V, 3.3V).
  8. Is this device ONFI compliant?
    Yes, the MT29F4G08ABADAH4-IT:D is ONFI 1.0-compliant.
  9. What advanced commands does this device support?
    The device supports advanced commands such as program page cache mode, read page cache mode, one-time programmable (OTP) mode, and two-plane commands.
  10. How does the device indicate operation completion?
    The device uses a Ready/Busy# (R/B#) signal to indicate operation completion.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:4Gb (512M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:63-VFBGA
Supplier Device Package:63-VFBGA (9x11)
0 Remaining View Similar

In Stock

$6.63
35

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MT29F4G08ABADAH4-IT:D MT29F4G08ABBDAH4-IT:D MT29F4G08ABADAH4-ITX:D MT29F4G08ABADAH4-ITE:D MT29F4G08ABADAH4-AT:D
Manufacturer Micron Technology Inc. Micron Technology Inc. Micron Technology Inc. Micron Technology Inc. Micron Technology Inc.
Product Status Active Active Obsolete Obsolete Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile Non-Volatile Non-Volatile
Memory Format Flash Flash Flash Flash Flash
Technology FLASH - NAND FLASH - NAND FLASH - NAND FLASH - NAND FLASH - NAND
Memory Size 4Gb (512M x 8) 4Gb (512M x 8) 4Gb (512M x 8) 4Gb (512M x 8) 4Gb (512M x 8)
Memory Interface Parallel Parallel Parallel Parallel Parallel
Clock Frequency - - - - -
Write Cycle Time - Word, Page - - - - -
Access Time - - - - -
Voltage - Supply 2.7V ~ 3.6V 1.7V ~ 1.95V 2.7V ~ 3.6V 2.7V ~ 3.6V 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) 0°C ~ 70°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 63-VFBGA 63-VFBGA 63-VFBGA 63-VFBGA 63-VFBGA
Supplier Device Package 63-VFBGA (9x11) 63-VFBGA (9x11) 63-VFBGA (9x11) 63-VFBGA (9x11) 63-VFBGA (9x11)

Related Product By Categories

MT47H128M16RT-25E:C
MT47H128M16RT-25E:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
AT24C02BN-SP25-B
AT24C02BN-SP25-B
Atmel
IC EEPROM 2KBIT I2C 1MHZ
PCF85103C-2T/00118
PCF85103C-2T/00118
NXP USA Inc.
256 X 8-BIT EEPROM WITH I2C
MT41K128M16JT-125 XIT:K TR
MT41K128M16JT-125 XIT:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
AT24C02AN-10SI
AT24C02AN-10SI
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M27C512-70C6
M27C512-70C6
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M29F400BB70N6T TR
M29F400BB70N6T TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W320DB70N3F TR
M29W320DB70N3F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
CAT25080YI-GT3JN
CAT25080YI-GT3JN
onsemi
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
M25P40-VMN6TPBA TR
M25P40-VMN6TPBA TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
M24256-BWMN6TP/A
M24256-BWMN6TP/A
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
MTFC8GAKAJCN-4M IT TR
MTFC8GAKAJCN-4M IT TR
Micron Technology Inc.
IC FLASH 64GBIT MMC 153VFBGA

Related Product By Brand

MT25QL512ABB8ESF-0AAT TR
MT25QL512ABB8ESF-0AAT TR
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
MT40A512M16TB-062E:R
MT40A512M16TB-062E:R
Micron Technology Inc.
MOD DRAM 8GBIT PARALLEL 96FBGA
MT41K128M16JT-125 AUT:K
MT41K128M16JT-125 AUT:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT25QL256ABA1EW9-0SIT
MT25QL256ABA1EW9-0SIT
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT25QL128ABA8ESF-0AAT
MT25QL128ABA8ESF-0AAT
Micron Technology Inc.
IC FLASH 128MBIT SPI 16SOP2
M28W320FCB70N6F TR
M28W320FCB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M45PE80-VMP6G
M45PE80-VMP6G
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8VDFPN
M29W640GL70NA6E
M29W640GL70NA6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P20-VMN6TPB TR
M25P20-VMN6TPB TR
Micron Technology Inc.
IC FLASH 2MBIT SPI 75MHZ 8SO
MT41K128M16JT-125 M AIT:K
MT41K128M16JT-125 M AIT:K
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
M29F400FB55M32
M29F400FB55M32
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 44SO
MTFC32GAPALBH-AIT ES TR
MTFC32GAPALBH-AIT ES TR
Micron Technology Inc.
IC FLASH 256GBIT MMC 153TFBGA