Overview
The M29W128GL90N6E is a 128Mb 3V Embedded Parallel NOR Flash memory device manufactured by Micron Technology Inc. This device is built on 90nm single-level cell (SLC) technology and is designed for a wide range of applications requiring high-performance and reliable non-volatile memory. It operates with a single low-voltage supply and supports asynchronous random and page read operations from all blocks of the memory array.
Key Specifications
| Parameter | Value |
|---|---|
| Memory Density | 128Mb |
| Supply Voltage (VCC) | 2.7–3.6V |
| Supply Voltage (VCCQ) for I/O buffers | 1.65–3.6V |
| Program/Erase Voltage (VPPH) | 12V (optional for fast program) |
| Page Size | 8 words or 16 bytes |
| Page Access Time | 25, 30ns |
| Random Access Time | 60ns, 70ns, 80ns |
| Program Time per Byte/Word | 16µs (typical) |
| Chip Program Time | 5s with VPPH, 8s without VPPH |
| Memory Organization | 128 uniform blocks, each 128-Kbytes or 64-Kwords |
| Package Options | 56-pin TSOP, 64-ball TBGA, 64-ball FBGA |
| Temperature Range | –40°C to +125°C (automotive grade certified) |
| Program/Erase Cycles per Block | Minimum 100,000 cycles |
Key Features
- Asynchronous random and page read operations with access times of 25, 30ns for page reads and 60, 70, 80ns for random reads.
- Fast program commands with a 32-word (64-byte) write buffer and enhanced buffered program capability for 256 words in one command sequence.
- Program/erase controller with suspend and resume capability, allowing read from any block during program suspend and read or program another block during erase suspend.
- Unlock bypass, block erase, chip erase, write to buffer, and enhanced buffer program commands.
- VPP/WP# pin protection to secure the first or last block regardless of block protection settings.
- Software protection including volatile, nonvolatile, and password protection.
- Extended memory block of 128 words (256 bytes) for permanent, secure identification.
- Common flash interface with a 64-bit security code.
- Low power consumption in standby and automatic mode.
- RoHS compliant packages.
Applications
The M29W128GL90N6E is suitable for a variety of applications, including:
- Automotive systems: Given its automotive grade temperature range and certification, it is ideal for use in vehicles.
- Industrial control systems: Its reliability and high-performance make it a good fit for industrial control and automation.
- Consumer electronics: It can be used in various consumer electronic devices requiring non-volatile memory.
- Aerospace and defense: The device's robustness and security features make it suitable for aerospace and defense applications.
Q & A
- What is the memory density of the M29W128GL90N6E?
The memory density is 128Mb. - What are the supply voltage ranges for this device?
The supply voltage (VCC) is 2.7–3.6V, and the supply voltage for I/O buffers (VCCQ) is 1.65–3.6V. - What is the program time per byte/word for this device?
The program time per byte/word is typically 16µs. - How many program/erase cycles can each block withstand?
Each block can withstand a minimum of 100,000 program/erase cycles. - What are the package options available for this device?
The device is available in 56-pin TSOP, 64-ball TBGA, and 64-ball FBGA packages. - What is the temperature range for this device?
The temperature range is –40°C to +125°C, making it suitable for automotive and other harsh environments. - Does the device support fast programming?
Yes, it supports fast programming with an optional 12V VPPH voltage. - What kind of protection does the device offer?
The device offers hardware and software protection, including VPP/WP# pin protection, volatile, nonvolatile, and password protection. - Is the device RoHS compliant?
Yes, the device is RoHS compliant. - What is the purpose of the extended memory block?
The extended memory block is for permanent, secure identification and can be programmed and protected to secure its contents.
