MT29F2G08ABAEAWP-E:E
  • Share:

Micron Technology Inc. MT29F2G08ABAEAWP-E:E

Manufacturer No:
MT29F2G08ABAEAWP-E:E
Manufacturer:
Micron Technology Inc.
Package:
Tube
Description:
IC FLASH 2GBIT PARALLEL 48TSOP I
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT29F2G08ABAEAWP:E is a 2Gbit Single-Level Cell (SLC) NAND Flash memory component manufactured by Micron Technology Inc. This device is designed to provide high reliability and performance in various storage applications. It operates within a voltage range of 2.7V to 3.6V and is packaged in a 48-pin TSOP-I (Thin Small Outline Package) configuration. The MT29F2G08ABAEAWP:E is compliant with the ONFI (Open NAND Flash Interface) 1.0 specification, ensuring compatibility with a wide range of systems.

Key Specifications

Attribute Value
Manufacturer Micron Technology Inc.
Part Number MT29F2G08ABAEAWP:E
Category Memory / NAND FLASH
Package 48-pin TSOP-I
Device Size 2Gb (256M x 8)
Page Size 2112 bytes (2048 + 64 bytes)
Block Size 64 pages (128K + 4K bytes)
Plane Size 2 planes x 1024 blocks per plane
Operating Voltage 2.7V - 3.6V
Operating Temperature Commercial: 0°C to +70°C, Industrial: -40°C to +85°C
Data Retention 10 years
Endurance 100,000 PROGRAM/ERASE cycles
Read Time 25 μs (typical)
Program Time 200 μs (typical)
Erase Time 700 μs (typical)

Key Features

  • Single-Level Cell (SLC) Technology: Offers high reliability and endurance.
  • ONFI 1.0 Compliance: Ensures compatibility with a wide range of systems.
  • High Performance: Fast read, program, and erase times.
  • Low Power Consumption: Operates within a voltage range of 2.7V to 3.6V.
  • Advanced Command Set: Supports various commands for efficient data management.
  • Internal Data Move Operations: Supports data move operations within the plane.
  • Two-Plane Commands: Enhances performance by allowing simultaneous operations on two planes.
  • One-Time Programmable (OTP) Mode: Provides additional security features.

Applications

The MT29F2G08ABAEAWP:E SLC NAND Flash is suitable for a variety of applications requiring high reliability and performance, including:

  • Industrial Control Systems: Where data integrity and endurance are critical.
  • Automotive Systems: For applications that require robust storage solutions.
  • Embedded Systems: In devices that need reliable and efficient storage.
  • Networking Equipment: For storing configuration data and firmware.
  • Medical Devices: Where data reliability and longevity are paramount.

Q & A

  1. What is the storage capacity of the MT29F2G08ABAEAWP:E?

    The MT29F2G08ABAEAWP:E has a storage capacity of 2Gbit (256M x 8).

  2. What is the operating voltage range of the MT29F2G08ABAEAWP:E?

    The operating voltage range is 2.7V to 3.6V.

  3. What is the package type of the MT29F2G08ABAEAWP:E?

    The package type is 48-pin TSOP-I.

  4. What is the endurance of the MT29F2G08ABAEAWP:E?

    The endurance is 100,000 PROGRAM/ERASE cycles.

  5. Is the MT29F2G08ABAEAWP:E compliant with any specific interface standards?

    Yes, it is compliant with the ONFI 1.0 specification.

  6. What are the typical read, program, and erase times for the MT29F2G08ABAEAWP:E?

    The typical times are 25 μs for read, 200 μs for program, and 700 μs for erase.

  7. Does the MT29F2G08ABAEAWP:E support internal data move operations?

    Yes, it supports internal data move operations within the plane.

  8. What are the operating temperature ranges for the MT29F2G08ABAEAWP:E?

    The operating temperature ranges are Commercial: 0°C to +70°C and Industrial: -40°C to +85°C.

  9. What is the data retention period for the MT29F2G08ABAEAWP:E?

    The data retention period is 10 years.

  10. Does the MT29F2G08ABAEAWP:E support two-plane commands?

    Yes, it supports two-plane commands for enhanced performance.

  11. Is the MT29F2G08ABAEAWP:E suitable for automotive applications?

    Yes, it is suitable for automotive applications due to its robust and reliable design.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:2Gb (256M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP I
0 Remaining View Similar

In Stock

-
536

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20WV3S/AA
DD15S20WV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

M45PE80-VMP6TG
M45PE80-VMP6TG
Alliance Memory, Inc.
IC FLASH 8MBIT SPI 75MHZ 8VFQFPN
M45PE20-VMN6P
M45PE20-VMN6P
Alliance Memory, Inc.
IC FLASH 2MBIT SPI 75MHZ 8SO
CAT25256XI-T2
CAT25256XI-T2
onsemi
IC EEPROM 256KBIT SPI 8SOIC
M95M01-RMN6P
M95M01-RMN6P
STMicroelectronics
IC EEPROM 1MBIT SPI 16MHZ 8SO
M24C02-RMN6P
M24C02-RMN6P
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
M95256-DRMF3TG/K
M95256-DRMF3TG/K
STMicroelectronics
IC EEPROM 256KBIT SPI 20MHZ 8MLP
M27C512-70C6
M27C512-70C6
STMicroelectronics
IC EPROM 512KBIT PARALLEL 32PLCC
M93C46-WMN6T
M93C46-WMN6T
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M24512-WMW6TG
M24512-WMW6TG
STMicroelectronics
IC EEPROM 512KBIT I2C 1MHZ 8SO
M25P16-VMN3PB
M25P16-VMN3PB
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M29W320DB70ZA3F TR
M29W320DB70ZA3F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 63TFBGA
CAT25128VI-GT3D
CAT25128VI-GT3D
onsemi
IC EEPROM 128KB SERIAL SPI 8TSSO

Related Product By Brand

MT41K512M16VRP-107 AIT:P TR
MT41K512M16VRP-107 AIT:P TR
Micron Technology Inc.
IC DRAM 8GB DDR3 PARALLEL 96TFBG
MT41J128M16JT-125:K TR
MT41J128M16JT-125:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT25QL256ABA1EW7-0SIT
MT25QL256ABA1EW7-0SIT
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
M25P40-VMN6
M25P40-VMN6
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8SO
M25P40-VMP6TG TR
M25P40-VMP6TG TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8VDFPN
M29F040B70K1
M29F040B70K1
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
M29F040B90K1
M29F040B90K1
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
M29W320DB70ZE6F TR
M29W320DB70ZE6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TFBGA
M29W320EB70ZE6F TR
M29W320EB70ZE6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TFBGA
MT41K128M16JT-125 V:K TR
MT41K128M16JT-125 V:K TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 96FBGA
MT53D1024M32D4DT-046 AUT:D TR
MT53D1024M32D4DT-046 AUT:D TR
Micron Technology Inc.
IC DRAM 32GBIT 2133MHZ 200VFBGA
MTFC8GAKAJCN-4M IT TR
MTFC8GAKAJCN-4M IT TR
Micron Technology Inc.
IC FLASH 64GBIT MMC 153VFBGA