MT29F2G08ABAEAWP-E:E
  • Share:

Micron Technology Inc. MT29F2G08ABAEAWP-E:E

Manufacturer No:
MT29F2G08ABAEAWP-E:E
Manufacturer:
Micron Technology Inc.
Package:
Tube
Description:
IC FLASH 2GBIT PARALLEL 48TSOP I
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT29F2G08ABAEAWP:E is a 2Gbit Single-Level Cell (SLC) NAND Flash memory component manufactured by Micron Technology Inc. This device is designed to provide high reliability and performance in various storage applications. It operates within a voltage range of 2.7V to 3.6V and is packaged in a 48-pin TSOP-I (Thin Small Outline Package) configuration. The MT29F2G08ABAEAWP:E is compliant with the ONFI (Open NAND Flash Interface) 1.0 specification, ensuring compatibility with a wide range of systems.

Key Specifications

Attribute Value
Manufacturer Micron Technology Inc.
Part Number MT29F2G08ABAEAWP:E
Category Memory / NAND FLASH
Package 48-pin TSOP-I
Device Size 2Gb (256M x 8)
Page Size 2112 bytes (2048 + 64 bytes)
Block Size 64 pages (128K + 4K bytes)
Plane Size 2 planes x 1024 blocks per plane
Operating Voltage 2.7V - 3.6V
Operating Temperature Commercial: 0°C to +70°C, Industrial: -40°C to +85°C
Data Retention 10 years
Endurance 100,000 PROGRAM/ERASE cycles
Read Time 25 μs (typical)
Program Time 200 μs (typical)
Erase Time 700 μs (typical)

Key Features

  • Single-Level Cell (SLC) Technology: Offers high reliability and endurance.
  • ONFI 1.0 Compliance: Ensures compatibility with a wide range of systems.
  • High Performance: Fast read, program, and erase times.
  • Low Power Consumption: Operates within a voltage range of 2.7V to 3.6V.
  • Advanced Command Set: Supports various commands for efficient data management.
  • Internal Data Move Operations: Supports data move operations within the plane.
  • Two-Plane Commands: Enhances performance by allowing simultaneous operations on two planes.
  • One-Time Programmable (OTP) Mode: Provides additional security features.

Applications

The MT29F2G08ABAEAWP:E SLC NAND Flash is suitable for a variety of applications requiring high reliability and performance, including:

  • Industrial Control Systems: Where data integrity and endurance are critical.
  • Automotive Systems: For applications that require robust storage solutions.
  • Embedded Systems: In devices that need reliable and efficient storage.
  • Networking Equipment: For storing configuration data and firmware.
  • Medical Devices: Where data reliability and longevity are paramount.

Q & A

  1. What is the storage capacity of the MT29F2G08ABAEAWP:E?

    The MT29F2G08ABAEAWP:E has a storage capacity of 2Gbit (256M x 8).

  2. What is the operating voltage range of the MT29F2G08ABAEAWP:E?

    The operating voltage range is 2.7V to 3.6V.

  3. What is the package type of the MT29F2G08ABAEAWP:E?

    The package type is 48-pin TSOP-I.

  4. What is the endurance of the MT29F2G08ABAEAWP:E?

    The endurance is 100,000 PROGRAM/ERASE cycles.

  5. Is the MT29F2G08ABAEAWP:E compliant with any specific interface standards?

    Yes, it is compliant with the ONFI 1.0 specification.

  6. What are the typical read, program, and erase times for the MT29F2G08ABAEAWP:E?

    The typical times are 25 μs for read, 200 μs for program, and 700 μs for erase.

  7. Does the MT29F2G08ABAEAWP:E support internal data move operations?

    Yes, it supports internal data move operations within the plane.

  8. What are the operating temperature ranges for the MT29F2G08ABAEAWP:E?

    The operating temperature ranges are Commercial: 0°C to +70°C and Industrial: -40°C to +85°C.

  9. What is the data retention period for the MT29F2G08ABAEAWP:E?

    The data retention period is 10 years.

  10. Does the MT29F2G08ABAEAWP:E support two-plane commands?

    Yes, it supports two-plane commands for enhanced performance.

  11. Is the MT29F2G08ABAEAWP:E suitable for automotive applications?

    Yes, it is suitable for automotive applications due to its robust and reliable design.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:2Gb (256M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP I
0 Remaining View Similar

In Stock

-
536

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

CAT25256XI-T2
CAT25256XI-T2
onsemi
IC EEPROM 256KBIT SPI 8SOIC
M95256-DRMF3TG/K
M95256-DRMF3TG/K
STMicroelectronics
IC EEPROM 256KBIT SPI 20MHZ 8MLP
CAT25010VI-GT3A
CAT25010VI-GT3A
onsemi
IC EEPROM 1KBIT SPI 20MHZ 8SOIC
AT24C02A-10PI-2.5
AT24C02A-10PI-2.5
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8DIP
M24128-BWMN6P
M24128-BWMN6P
STMicroelectronics
IC EEPROM 128KBIT I2C 1MHZ 8SO
M25P32-VME6G
M25P32-VME6G
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8VDFPN
M27C1001-45XC1
M27C1001-45XC1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32PLCC
M29F800DB70N6T TR
M29F800DB70N6T TR
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M93C46-MN6P
M93C46-MN6P
STMicroelectronics
IC EEPROM 1KBIT SPI 2MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
M28W320FCB70ZB6E
M28W320FCB70ZB6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 47TFBGA
M24256-BWMN6TP/A
M24256-BWMN6TP/A
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO

Related Product By Brand

MT29F1G08ABAEAWP-IT:E
MT29F1G08ABAEAWP-IT:E
Micron Technology Inc.
IC FLASH 1GBIT PARALLEL 48TSOP I
MT47H64M16NF-25E IT:M TR
MT47H64M16NF-25E IT:M TR
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 84FBGA
MT25QL512ABB8ESF-0SIT
MT25QL512ABB8ESF-0SIT
Micron Technology Inc.
IC FLASH 512MBIT SPI 133MHZ 16SO
M29W320DB70N6E
M29W320DB70N6E
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M29W320EB70ZE6F TR
M29W320EB70ZE6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TFBGA
M29W400DB70N6
M29W400DB70N6
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M29W400DB70N6T TR
M29W400DB70N6T TR
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M25P128-VME6TG TR
M25P128-VME6TG TR
Micron Technology Inc.
IC FLASH 128MBIT 50MHZ 8VDFPN
M25P40-VMN3TPB TR
M25P40-VMN3TPB TR
Micron Technology Inc.
IC FLASH 4MBIT SPI 75MHZ 8SO
M28W640HCB70N6E
M28W640HCB70N6E
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48TSOP
M25P32-VMW3GB TR
M25P32-VMW3GB TR
Micron Technology Inc.
IC FLASH 32MBIT SPI 75MHZ 8SO
MT40A512M16LY-062E AT:E TR
MT40A512M16LY-062E AT:E TR
Micron Technology Inc.
IC FLASH 8GBIT 1.6GHZ 96FBGA