MT29F2G08ABAEAWP-E:E
  • Share:

Micron Technology Inc. MT29F2G08ABAEAWP-E:E

Manufacturer No:
MT29F2G08ABAEAWP-E:E
Manufacturer:
Micron Technology Inc.
Package:
Tube
Description:
IC FLASH 2GBIT PARALLEL 48TSOP I
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MT29F2G08ABAEAWP:E is a 2Gbit Single-Level Cell (SLC) NAND Flash memory component manufactured by Micron Technology Inc. This device is designed to provide high reliability and performance in various storage applications. It operates within a voltage range of 2.7V to 3.6V and is packaged in a 48-pin TSOP-I (Thin Small Outline Package) configuration. The MT29F2G08ABAEAWP:E is compliant with the ONFI (Open NAND Flash Interface) 1.0 specification, ensuring compatibility with a wide range of systems.

Key Specifications

Attribute Value
Manufacturer Micron Technology Inc.
Part Number MT29F2G08ABAEAWP:E
Category Memory / NAND FLASH
Package 48-pin TSOP-I
Device Size 2Gb (256M x 8)
Page Size 2112 bytes (2048 + 64 bytes)
Block Size 64 pages (128K + 4K bytes)
Plane Size 2 planes x 1024 blocks per plane
Operating Voltage 2.7V - 3.6V
Operating Temperature Commercial: 0°C to +70°C, Industrial: -40°C to +85°C
Data Retention 10 years
Endurance 100,000 PROGRAM/ERASE cycles
Read Time 25 μs (typical)
Program Time 200 μs (typical)
Erase Time 700 μs (typical)

Key Features

  • Single-Level Cell (SLC) Technology: Offers high reliability and endurance.
  • ONFI 1.0 Compliance: Ensures compatibility with a wide range of systems.
  • High Performance: Fast read, program, and erase times.
  • Low Power Consumption: Operates within a voltage range of 2.7V to 3.6V.
  • Advanced Command Set: Supports various commands for efficient data management.
  • Internal Data Move Operations: Supports data move operations within the plane.
  • Two-Plane Commands: Enhances performance by allowing simultaneous operations on two planes.
  • One-Time Programmable (OTP) Mode: Provides additional security features.

Applications

The MT29F2G08ABAEAWP:E SLC NAND Flash is suitable for a variety of applications requiring high reliability and performance, including:

  • Industrial Control Systems: Where data integrity and endurance are critical.
  • Automotive Systems: For applications that require robust storage solutions.
  • Embedded Systems: In devices that need reliable and efficient storage.
  • Networking Equipment: For storing configuration data and firmware.
  • Medical Devices: Where data reliability and longevity are paramount.

Q & A

  1. What is the storage capacity of the MT29F2G08ABAEAWP:E?

    The MT29F2G08ABAEAWP:E has a storage capacity of 2Gbit (256M x 8).

  2. What is the operating voltage range of the MT29F2G08ABAEAWP:E?

    The operating voltage range is 2.7V to 3.6V.

  3. What is the package type of the MT29F2G08ABAEAWP:E?

    The package type is 48-pin TSOP-I.

  4. What is the endurance of the MT29F2G08ABAEAWP:E?

    The endurance is 100,000 PROGRAM/ERASE cycles.

  5. Is the MT29F2G08ABAEAWP:E compliant with any specific interface standards?

    Yes, it is compliant with the ONFI 1.0 specification.

  6. What are the typical read, program, and erase times for the MT29F2G08ABAEAWP:E?

    The typical times are 25 μs for read, 200 μs for program, and 700 μs for erase.

  7. Does the MT29F2G08ABAEAWP:E support internal data move operations?

    Yes, it supports internal data move operations within the plane.

  8. What are the operating temperature ranges for the MT29F2G08ABAEAWP:E?

    The operating temperature ranges are Commercial: 0°C to +70°C and Industrial: -40°C to +85°C.

  9. What is the data retention period for the MT29F2G08ABAEAWP:E?

    The data retention period is 10 years.

  10. Does the MT29F2G08ABAEAWP:E support two-plane commands?

    Yes, it supports two-plane commands for enhanced performance.

  11. Is the MT29F2G08ABAEAWP:E suitable for automotive applications?

    Yes, it is suitable for automotive applications due to its robust and reliable design.

Product Attributes

Memory Type:Non-Volatile
Memory Format:Flash
Technology:FLASH - NAND
Memory Size:2Gb (256M x 8)
Memory Interface:Parallel
Clock Frequency:- 
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2.7V ~ 3.6V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:48-TSOP I
0 Remaining View Similar

In Stock

-
536

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

M24C02-WMN6TP
M24C02-WMN6TP
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
24LC16BT-I/OT
24LC16BT-I/OT
Microchip Technology
IC EEPROM 16KBIT I2C SOT23-5
M95M01-RMN6P
M95M01-RMN6P
STMicroelectronics
IC EEPROM 1MBIT SPI 16MHZ 8SO
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
AT24C02BN-SP25-B
AT24C02BN-SP25-B
Atmel
IC EEPROM 2KBIT I2C 1MHZ
M95320-DWDW4TP/K
M95320-DWDW4TP/K
STMicroelectronics
IC EEPROM 32KBIT SPI 8TSSOP
M27C256B-70C6
M27C256B-70C6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 32PLCC
M24C02-RDS6TG
M24C02-RDS6TG
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8MSOP
M29F010B70K6E
M29F010B70K6E
Micron Technology Inc.
IC FLASH 1MBIT PARALLEL 32PLCC
M29F040B90K1
M29F040B90K1
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 32PLCC
M25P16S-VMN6TP TR
M25P16S-VMN6TP TR
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8SO
M29W128GL70ZS3E
M29W128GL70ZS3E
Micron Technology Inc.
IC FLASH 128MBIT PARALLEL 64FBGA

Related Product By Brand

MT47H128M16RT-25E:C
MT47H128M16RT-25E:C
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 84FBGA
MT25QU256ABA1EW9-0SIT TR
MT25QU256ABA1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT25QL256ABA1EW9-0SIT TR
MT25QL256ABA1EW9-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 8WPDFN
MT25QU256ABA8ESF-0SIT TR
MT25QU256ABA8ESF-0SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 133MHZ 16SO
MT25QU256ABA8E12-1SIT TR
MT25QU256ABA8E12-1SIT TR
Micron Technology Inc.
IC FLASH 256MBIT SPI 24TPBGA
MTFC8GAMALBH-AIT TR
MTFC8GAMALBH-AIT TR
Micron Technology Inc.
IC FLASH 64GBIT MMC 153TFBGA
M29W160EB70N6E
M29W160EB70N6E
Micron Technology Inc.
IC FLASH 16MBIT PARALLEL 48TSOP
M29W800DB70N6E
M29W800DB70N6E
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
M28W320FCB70N6F TR
M28W320FCB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M25P80S-VMN6TP TR
M25P80S-VMN6TP TR
Micron Technology Inc.
IC FLASH 8MBIT SPI 75MHZ 8SO
M29W320DB7AN6F TR
M29W320DB7AN6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
MTFC4GACAJCN-4M IT TR
MTFC4GACAJCN-4M IT TR
Micron Technology Inc.
IC FLASH 32GBIT MMC 153VFBGA