Overview
The FM28V100-TGTR is a 1-Mbit (128K × 8) Ferroelectric Random Access Memory (F-RAM) produced by Infineon Technologies. This nonvolatile memory device operates similarly to a standard SRAM, allowing for read and write operations without the need for external battery backup. The FM28V100-TGTR is designed to be a drop-in replacement for standard asynchronous SRAMs, offering fast write timing, high write endurance, and data retention for over 151 years. It is particularly suited for applications requiring frequent or rapid writes and is available in a 32-pin thin small outline package (TSOP) Type I, which is RoHS compliant.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Supply | 2.0 V to 3.6 V | V |
| Operating Temperature | -40°C to +85°C | °C |
| Memory Size | 1 Mbit (128K × 8) | - |
| Access Time | 90 ns | ns |
| Write Cycle Time - Word, Page | 90 ns | ns |
| Active Current | 7 mA (typ) | mA |
| Standby Current | 90 μA (typ) | μA |
| Package Type | 32-pin TSOP I | - |
| Thermal Resistance (junction to ambient) | 80 °C/W | °C/W |
| Thermal Resistance (junction to case) | 21 °C/W | °C/W |
Key Features
- Nonvolatile Memory: Data is retained even after power is removed, with a data retention period of over 151 years.
- Low Power Consumption: Active current of 7 mA (typ) and standby current of 90 μA (typ).
- Fast Write Timing and High Write Endurance: Superior to other types of memory, making it ideal for frequent or rapid writes.
- Low-Voltage Operation: Operates within a voltage range of 2.0 V to 3.6 V.
- Industrial Temperature Range: Guaranteed operation from -40°C to +85°C.
- SRAM Drop-In Replacement: Designed to replace standard asynchronous SRAMs without requiring chip enable pins to toggle for each new address.
- Page Mode Operation: Allows fast access to any data within a row element, with speeds up to 33 MHz.
Applications
The FM28V100-TGTR is suitable for a variety of applications that require nonvolatile memory with fast write capabilities, such as:
- Industrial Automation: For systems that need to store data frequently and reliably.
- Medical Devices: Where data integrity and low power consumption are critical.
- Aerospace and Defense: For applications requiring high reliability and endurance.
- Consumer Electronics: For devices needing fast and reliable data storage.
- Automotive Systems: For applications that require data retention over long periods and in harsh environments.
Q & A
- What is the memory size of the FM28V100-TGTR?
The FM28V100-TGTR has a memory size of 1 Mbit (128K × 8). - What is the operating voltage range of the FM28V100-TGTR?
The operating voltage range is from 2.0 V to 3.6 V. - What is the typical active current consumption of the FM28V100-TGTR?
The typical active current consumption is 7 mA. - What is the standby current consumption of the FM28V100-TGTR?
The standby current consumption is 90 μA (typ). - What is the package type of the FM28V100-TGTR?
The package type is a 32-pin thin small outline package (TSOP) Type I. - Is the FM28V100-TGTR RoHS compliant?
Yes, the FM28V100-TGTR is RoHS compliant. - What is the data retention period of the FM28V100-TGTR?
The data retention period is over 151 years. - Can the FM28V100-TGTR be used as a drop-in replacement for standard SRAMs?
Yes, it is designed to be a drop-in replacement for standard asynchronous SRAMs. - What is the maximum page mode operation speed of the FM28V100-TGTR?
The maximum page mode operation speed is up to 33 MHz. - What is the operating temperature range of the FM28V100-TGTR?
The operating temperature range is from -40°C to +85°C.
