MMBTA42LT1HTSA1
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Infineon Technologies MMBTA42LT1HTSA1

Manufacturer No:
MMBTA42LT1HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 300V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA42LT1HTSA1 is a high-voltage NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for medium power amplification and switching applications. It is housed in a compact SOT23 surface mount package, making it suitable for use in a variety of electronic devices where space is limited.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 300 V
Collector-Emitter Voltage (VCEO) 300 V
Emitter-Base Voltage (VEBO) 6.0 V
Continuous Collector Current (IC) 500 mA
Power Dissipation (PD) 300 mW
Thermal Resistance, Junction to Ambient (RθJA) 417 °C/W
Operating and Storage Temperature Range -55 to +150 °C
Electrostatic Discharge (ESD) - Human Body Model 4000 V
Transition Frequency (fT) 50 MHz
DC Current Gain (hFE) 25 - 40
Collector-Emitter Saturation Voltage (VCE(sat)) 0.5 V
Base-Emitter Saturation Voltage (VBE(sat)) 0.9 V

Key Features

  • High voltage rating: BVCEO > 300V, making it ideal for medium power amplification and switching applications.
  • Complementary PNP type: MMBTA92 available for matching applications.
  • Totally lead-free and fully RoHS compliant, halogen and antimony free, and classified as a “Green” device.
  • Compact SOT23 surface mount package for space-efficient designs.
  • High DC current gain (hFE) and low saturation voltage (VCE(sat)) for efficient operation.
  • Automotive-compliant part available under a separate datasheet (MMBTA42Q).

Applications

  • Medium power amplification and switching applications.
  • Voltage regulators, relay drivers, and inverters due to its high-speed switching capabilities.
  • Power management systems, signal amplifiers, and motor control circuits.
  • LED lighting and audio amplifiers where high current gain and low saturation voltage are beneficial.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBTA42LT1HTSA1?

    The maximum collector-emitter voltage (VCEO) is 300V.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current (IC) is 500 mA.

  3. What is the power dissipation rating of the MMBTA42LT1HTSA1?

    The power dissipation (PD) is 300 mW.

  4. Is the MMBTA42LT1HTSA1 RoHS compliant?

    Yes, it is totally lead-free and fully RoHS compliant.

  5. What is the transition frequency (fT) of this transistor?

    The transition frequency (fT) is 50 MHz.

  6. What are the operating and storage temperature ranges for this transistor?

    The operating and storage temperature range is -55 to +150°C.

  7. Is there a complementary PNP type available for the MMBTA42LT1HTSA1?

    Yes, the complementary PNP type is the MMBTA92.

  8. What is the package type of the MMBTA42LT1HTSA1?

    The package type is SOT23 surface mount.

  9. What are some typical applications for the MMBTA42LT1HTSA1?

    Typical applications include medium power amplification, switching, voltage regulators, relay drivers, and power management systems.

  10. Is the MMBTA42LT1HTSA1 suitable for automotive applications?

    An automotive-compliant part is available under a separate datasheet (MMBTA42Q).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 10V
Power - Max:360 mW
Frequency - Transition:70MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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