Overview
The BC848BWE6327BTSA1 is a surface mount NPN bipolar junction transistor manufactured by Infineon Technologies. It is designed for general-purpose amplification and switching applications. However, it is important to note that this component is currently obsolete and no longer manufactured by Infineon Technologies.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | - | - | 50 | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 30 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | - | - | 5.0 | V |
| Collector Cutoff Current | ICBO | - | - | 15 nA | nA |
| DC Current Gain | hFE | 110 | 200 | 420 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 V | V |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.7 V | V |
| Total Device Dissipation | PD | - | - | 200 mW | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 620 °C/W | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55°C | - | +150°C | °C |
Key Features
- Surface mount package (SOT-323)
- NPN bipolar junction transistor
- General-purpose amplification and switching applications
- High DC current gain (hFE) for reliable amplification
- Low collector-emitter and base-emitter saturation voltages for efficient operation
- Wide operating temperature range (-55°C to +150°C)
Applications
The BC848BWE6327BTSA1 is suitable for a variety of general-purpose amplification and switching applications. These include audio amplifiers, signal processing circuits, and other electronic systems that require reliable and efficient transistor performance.
Q & A
- What is the BC848BWE6327BTSA1? The BC848BWE6327BTSA1 is a surface mount NPN bipolar junction transistor manufactured by Infineon Technologies.
- What are the key applications of the BC848BWE6327BTSA1? It is used in general-purpose amplification and switching applications, including audio amplifiers and signal processing circuits.
- What is the collector-base breakdown voltage of the BC848BWE6327BTSA1? The collector-base breakdown voltage (V(BR)CBO) is up to 50 V.
- What is the DC current gain (hFE) of the BC848BWE6327BTSA1? The DC current gain (hFE) ranges from 110 to 420.
- What is the thermal resistance, junction-to-ambient (RJA) of the BC848BWE6327BTSA1? The thermal resistance, junction-to-ambient (RJA), is 620 °C/W.
- What is the total device dissipation (PD) of the BC848BWE6327BTSA1? The total device dissipation (PD) is up to 200 mW.
- Is the BC848BWE6327BTSA1 still in production? No, the BC848BWE6327BTSA1 is obsolete and no longer manufactured by Infineon Technologies.
- What are the available substitutes for the BC848BWE6327BTSA1? Available substitutes include the BC848BWH6327XTSA1.
- What is the junction and storage temperature range of the BC848BWE6327BTSA1? The junction and storage temperature range is -55°C to +150°C.
- What package type does the BC848BWE6327BTSA1 use? The BC848BWE6327BTSA1 uses a SOT-323 surface mount package.
