IRFR024NTRPBF
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Infineon Technologies IRFR024NTRPBF

Manufacturer No:
IRFR024NTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 17A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFR024NTRPBF is a high-performance N-Channel MOSFET manufactured by Infineon Technologies. Designed for enhancement mode operation, this semiconductor device efficiently controls the flow of electricity between the drain and source terminals. It is widely used in various electronic circuits due to its robust specifications and reliability.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)55V
Continuous Drain Current (Id)17A
Drain-Source Resistance (Rds On)75 mOhms
Gate-Source Voltage (Vgs)-20V to +20V
Gate-Source Threshold Voltage (Vgs th)1.8V
Gate Charge (Qg)20nC
Package StyleTO-252-3 (Surface Mount)
Operating Temperature Range-55°C to +175°C
Power Dissipation45W

Key Features

  • Advanced process technology for high efficiency.
  • Fully avalanche rated for robust operation.
  • Low static drain-to-source ON-resistance (Rds On) of 75 mOhms.
  • Dynamic dV/dt rating for reliable switching performance.
  • Compact surface-mount package (TO-252-3) suitable for modern circuit board assembly techniques like reflow soldering.
  • Wide operating temperature range of -55°C to +175°C, making it suitable for various industrial and commercial environments.

Applications

The IRFR024NTRPBF is primarily used in power management applications due to its high current handling capability and low on-resistance. It is suitable for a variety of applications including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching regulators and power amplifiers.
  • Industrial and commercial power management systems.

Q & A

  1. What is the Drain-Source Breakdown Voltage (Vds) of the IRFR024NTRPBF?
    The Drain-Source Breakdown Voltage (Vds) is 55V.
  2. What is the Continuous Drain Current (Id) rating of the IRFR024NTRPBF?
    The Continuous Drain Current (Id) rating is 17A.
  3. What is the Drain-Source Resistance (Rds On) of the IRFR024NTRPBF?
    The Drain-Source Resistance (Rds On) is 75 mOhms.
  4. What is the Gate-Source Voltage (Vgs) range for the IRFR024NTRPBF?
    The Gate-Source Voltage (Vgs) range is from -20V to +20V.
  5. What is the Gate-Source Threshold Voltage (Vgs th) of the IRFR024NTRPBF?
    The Gate-Source Threshold Voltage (Vgs th) is 1.8V.
  6. What is the Gate Charge (Qg) of the IRFR024NTRPBF?
    The Gate Charge (Qg) is 20nC.
  7. In what package style is the IRFR024NTRPBF available?
    The IRFR024NTRPBF is available in a TO-252-3 surface-mount package.
  8. What is the operating temperature range of the IRFR024NTRPBF?
    The operating temperature range is from -55°C to +175°C.
  9. What are some common applications of the IRFR024NTRPBF?
    Common applications include power supplies, DC-DC converters, motor control systems, and industrial power management.
  10. Why is the IRFR024NTRPBF suitable for modern circuit board assembly?
    The IRFR024NTRPBF is suitable due to its compact surface-mount package and compatibility with reflow soldering techniques.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number IRFR024NTRPBF IRFR024TRPBF IRFR024NTRRPBF IRFR024NTRLPBF
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies Infineon Technologies
Product Status Active Active Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 14A (Tc) 17A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 10A, 10V 100mOhm @ 8.4A, 10V 75mOhm @ 10A, 10V 75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 25 nC @ 10 V 20 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 25 V 640 pF @ 25 V 370 pF @ 25 V 370 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 45W (Tc) 2.5W (Ta), 42W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-Pak D-Pak D-Pak PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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