BC 846BW H6327
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Infineon Technologies BC 846BW H6327

Manufacturer No:
BC 846BW H6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 65V 0.1A SOT323
Delivery:
Payment:
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Product Introduction

Overview

The BC 846BW H6327 is a bipolar junction transistor (BJT) manufactured by Infineon Technologies. This NPN transistor is designed for various electronic applications, particularly in automotive and general-purpose use. However, it is important to note that the BC 846BW H6327 is currently obsolete and no longer in production. Despite this, it remains relevant for understanding and replacing older designs.

Key Specifications

ParameterValue
ManufacturerInfineon Technologies
PackageSC-70, SOT-323
Transistor TypeNPN
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)65 V
Vce Saturation (Max) @ Ib, Ic600 mV @ 5 mA, 100 mA
Current - Collector Cutoff (Max)15 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2 mA, 5 V
Power - Max250 mW
Frequency - Transition250 MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount

Key Features

  • High Voltage Capability: The BC 846BW H6327 has a collector-emitter breakdown voltage of 65 V, making it suitable for applications requiring higher voltage handling.
  • Low Power Consumption: With a maximum power dissipation of 250 mW, this transistor is efficient for low-power applications.
  • High Transition Frequency: It has a transition frequency of 250 MHz, which is beneficial for high-frequency applications.
  • AEC-Q101 Qualified: This transistor is qualified to the AEC-Q101 standard, indicating its suitability for automotive applications.
  • Compact Package: The SC-70 and SOT-323 packages make it ideal for surface-mount designs where space is limited.

Applications

The BC 846BW H6327 is designed for a variety of applications, including:

  • Automotive Systems: Given its AEC-Q101 qualification, it is suitable for use in automotive electronics such as sensors, actuators, and control systems.
  • General-Purpose Amplification: It can be used in low-power amplifier circuits in consumer electronics and industrial control systems.
  • High-Frequency Circuits: The high transition frequency makes it suitable for radio frequency (RF) and other high-frequency applications.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BC 846BW H6327?
    The maximum collector-emitter breakdown voltage is 65 V.
  2. What is the maximum collector current of the BC 846BW H6327?
    The maximum collector current is 100 mA.
  3. What is the package type of the BC 846BW H6327?
    The package types are SC-70 and SOT-323.
  4. Is the BC 846BW H6327 still in production?
    No, the BC 846BW H6327 is obsolete and no longer manufactured.
  5. What is the operating temperature range of the BC 846BW H6327?
    The operating temperature range is up to 150°C (TJ).
  6. What is the transition frequency of the BC 846BW H6327?
    The transition frequency is 250 MHz.
  7. Is the BC 846BW H6327 AEC-Q101 qualified?
    Yes, it is qualified to the AEC-Q101 standard, making it suitable for automotive applications.
  8. What is the maximum power dissipation of the BC 846BW H6327?
    The maximum power dissipation is 250 mW.
  9. What is the DC current gain (hFE) of the BC 846BW H6327?
    The DC current gain (hFE) is a minimum of 200 at 2 mA and 5 V.
  10. What type of mounting does the BC 846BW H6327 use?
    The BC 846BW H6327 uses surface mount technology.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC 846BW H6327 BC 856BW H6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323

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