BAS70-05B5003
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Infineon Technologies BAS70-05B5003

Manufacturer No:
BAS70-05B5003
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
SCHOTTKY DIODE
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BAS70-05B5003 is a general-purpose dual Schottky diode produced by Infineon Technologies. It is designed for high-speed switching applications and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. This diode is suitable for various electronic designs requiring low leakage current, high breakdown voltage, and ultra-high-speed switching capabilities.

Key Specifications

Parameter Symbol Value Unit
Breakdown Voltage V(BR) 70 V
Reverse Current IR 0.1 µA
Forward Voltage VF 300 - 720 mV
Forward Current IF 70 mA
Capacitance Cd 2.0 pF
Operating Temperature Range Top -55 ... 125 °C
Storage Temperature Range TStg -55 ... 150 °C
Junction Temperature TJ 150 °C
Package Type SOT23 (TO-236AB)

Key Features

  • General-purpose dual Schottky diode for high-speed switching applications.
  • Low leakage current and high breakdown voltage.
  • Ultra-high-speed switching capabilities.
  • Low capacitance.
  • Voltage clamping and circuit protection.
  • Compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Applications

The BAS70-05B5003 is versatile and can be used in a wide range of applications, including:

  • Automotive systems for voltage clamping and circuit protection.
  • Industrial electronics for high-speed switching and low leakage current requirements.
  • Consumer electronics for efficient and reliable performance.
  • Power management circuits to ensure high-speed switching and low voltage drop.
  • Computing and mobile devices where low capacitance and high breakdown voltage are essential.

Q & A

  1. What is the breakdown voltage of the BAS70-05B5003?

    The breakdown voltage (V(BR)) of the BAS70-05B5003 is 70 V.

  2. What is the maximum forward current of the BAS70-05B5003?

    The maximum forward current (IF) of the BAS70-05B5003 is 70 mA.

  3. What is the typical forward voltage of the BAS70-05B5003?

    The typical forward voltage (VF) of the BAS70-05B5003 ranges from 300 to 720 mV, depending on the current.

  4. What is the operating temperature range of the BAS70-05B5003?

    The operating temperature range (Top) of the BAS70-05B5003 is -55°C to 125°C.

  5. What is the storage temperature range of the BAS70-05B5003?

    The storage temperature range (TStg) of the BAS70-05B5003 is -55°C to 150°C.

  6. What package type is the BAS70-05B5003 available in?

    The BAS70-05B5003 is available in the SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  7. What are some key applications of the BAS70-05B5003?

    The BAS70-05B5003 is used in automotive, industrial, consumer electronics, power management circuits, and computing and mobile devices.

  8. Does the BAS70-05B5003 have low leakage current?
  9. Is the BAS70-05B5003 suitable for high-speed switching applications?
  10. What is the capacitance of the BAS70-05B5003?
  11. Is the BAS70-05B5003 RoHS compliant?

Product Attributes

Diode Configuration:- 
Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io) (per Diode):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Operating Temperature - Junction:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BAS70-05B5003 BAS70-06B5003 BAS70-05B5000
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Diode Configuration - - -
Diode Type - - -
Voltage - DC Reverse (Vr) (Max) - - -
Current - Average Rectified (Io) (per Diode) - - -
Voltage - Forward (Vf) (Max) @ If - - -
Speed - - -
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr - - -
Operating Temperature - Junction - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

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