BAS70-05B5000
  • Share:

Infineon Technologies BAS70-05B5000

Manufacturer No:
BAS70-05B5000
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
SCHOTTKY DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS70-05B5000, produced by Infineon Technologies, is a high-performance Schottky diode designed for various high-speed switching and signal detection applications. This component is part of the BAS70 series, known for its low conduction losses, negligible switching losses, and low forward and reverse recovery times. The BAS70-05B5000 is particularly suited for use in RF applications and other circuits requiring fast switching and low capacitance.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 70 V
Continuous Forward Current IF 70 mA
Surge Non-Repetitive Forward Current (tp = 10 ms) IFSM 1 A
Maximum Operating Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -55 to +150 °C
Forward Voltage Drop (IF = 1 mA) VF 410 mV
Forward Voltage Drop (IF = 10 mA) VF 750 mV
Reverse Leakage Current (VR = 50 V) IR 100 nA
Diode Capacitance (VR = 0 V, F = 1 MHz) C 2 pF
Junction to Ambient Thermal Resistance Rth(j-a) 500-600 °C/W

Key Features

  • Low Conduction Losses: The BAS70-05B5000 offers very low forward voltage drop, reducing energy losses in high-speed switching applications.
  • Negligible Switching Losses: With low forward and reverse recovery times, this diode minimizes switching losses, making it ideal for high-frequency operations.
  • Low Capacitance: The diode features low capacitance, which is crucial for maintaining signal integrity in RF and high-speed applications.
  • Surface Mount Device: Available in various surface mount packages such as SOD-123, SOD-323, SOT-23, and others, making it easy to integrate into modern PCB designs.
  • High Temperature Stability: The component can operate up to a maximum junction temperature of 150°C, ensuring reliability in demanding environments.

Applications

  • RF Applications: The BAS70-05B5000 is specially suited for signal detection and temperature compensation in RF circuits due to its low capacitance and fast switching times.
  • High-Speed Switching: Ideal for applications requiring fast switching, such as in power supplies, DC-DC converters, and other high-speed electronic circuits.
  • Circuit Protection: Can be used for voltage clamping and circuit protection due to its high surge current capability and low forward voltage drop.
  • General-Purpose Diode: Suitable for a wide range of general-purpose applications where low conduction losses and fast recovery times are essential.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BAS70-05B5000?

    The maximum repetitive peak reverse voltage (VRRM) is 70 V.

  2. What is the continuous forward current rating of the BAS70-05B5000?

    The continuous forward current (IF) is 70 mA.

  3. What is the maximum operating junction temperature of the BAS70-05B5000?

    The maximum operating junction temperature (Tj) is 150°C.

  4. What is the typical forward voltage drop at 10 mA?

    The typical forward voltage drop (VF) at 10 mA is 750 mV.

  5. What is the diode capacitance at 1 MHz?

    The diode capacitance (C) at 1 MHz is 2 pF.

  6. In what packages is the BAS70-05B5000 available?

    The BAS70-05B5000 is available in packages such as SOD-123, SOD-323, SOT-23, and others.

  7. What are the primary applications of the BAS70-05B5000?

    The primary applications include RF applications, high-speed switching, circuit protection, and general-purpose use.

  8. What is the storage temperature range for the BAS70-05B5000?

    The storage temperature range (Tstg) is -55 to +150°C.

  9. What is the surge non-repetitive forward current rating for a 10 ms pulse?

    The surge non-repetitive forward current (IFSM) for a 10 ms pulse is 1 A.

  10. Why is the BAS70-05B5000 suitable for RF applications?

    It is suitable due to its low capacitance, low series inductance, and resistance, as well as its fast switching times.

Product Attributes

Diode Configuration:- 
Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io) (per Diode):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Operating Temperature - Junction:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.03
26,316

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS70-05B5000 BAS70-06B5000 BAS70-05B5003 BAS70-04B5000
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Diode Configuration - - - -
Diode Type - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Current - Average Rectified (Io) (per Diode) - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Speed - - - -
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr - - - -
Operating Temperature - Junction - - - -
Mounting Type - - - -
Package / Case - - - -
Supplier Device Package - - - -

Related Product By Categories

BAT54CW_R1_00001
BAT54CW_R1_00001
Panjit International Inc.
SOT-323, SKY
BAT54A-TP
BAT54A-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT23
BAW56W-7-F
BAW56W-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT323
MBRB20200CT
MBRB20200CT
SMC Diode Solutions
DIODE ARRAY SCHOTTKY 200V D2PAK
MUR3040PT
MUR3040PT
Harris Corporation
15A, 400V ULTRAFAST DUAL DIODE
STPS3045CP
STPS3045CP
STMicroelectronics
DIODE ARRAY SCHOTTKY 45V SOT93
BAS70-04 RFG
BAS70-04 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 70MA SOT23
MURB1620CT
MURB1620CT
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 8A D2PAK
BAS21SLT1
BAS21SLT1
onsemi
DIODE ARRAY GP 250V 225MA SOT23
BAS7004TC
BAS7004TC
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
STTH802CFP
STTH802CFP
STMicroelectronics
DIODE ARRAY GP 200V 4A TO220FP
BAW56SB6327XT
BAW56SB6327XT
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363

Related Product By Brand

BAT5404WH6327XTSA1
BAT5404WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT323
BAV70WH6327XTSA1
BAV70WH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BC859CE6327HTSA1
BC859CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
MMBTA42LT1
MMBTA42LT1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23-3
BCP6925E6327HTSA1
BCP6925E6327HTSA1
Infineon Technologies
TRANS PNP 20V 1A SOT223-4
BC857CB5003XT
BC857CB5003XT
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCX5216E6433HTMA1
BCX5216E6433HTMA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
IRF9530NPBF
IRF9530NPBF
Infineon Technologies
MOSFET P-CH 100V 14A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
TLE8104EXUMA2
TLE8104EXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
BTS4142NNT
BTS4142NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223
CY7C53150-20AXIT
CY7C53150-20AXIT
Infineon Technologies
IC PROCESSOR NEURON 64LQFP