BAS70-05B5000
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Infineon Technologies BAS70-05B5000

Manufacturer No:
BAS70-05B5000
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
SCHOTTKY DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS70-05B5000, produced by Infineon Technologies, is a high-performance Schottky diode designed for various high-speed switching and signal detection applications. This component is part of the BAS70 series, known for its low conduction losses, negligible switching losses, and low forward and reverse recovery times. The BAS70-05B5000 is particularly suited for use in RF applications and other circuits requiring fast switching and low capacitance.

Key Specifications

Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 70 V
Continuous Forward Current IF 70 mA
Surge Non-Repetitive Forward Current (tp = 10 ms) IFSM 1 A
Maximum Operating Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -55 to +150 °C
Forward Voltage Drop (IF = 1 mA) VF 410 mV
Forward Voltage Drop (IF = 10 mA) VF 750 mV
Reverse Leakage Current (VR = 50 V) IR 100 nA
Diode Capacitance (VR = 0 V, F = 1 MHz) C 2 pF
Junction to Ambient Thermal Resistance Rth(j-a) 500-600 °C/W

Key Features

  • Low Conduction Losses: The BAS70-05B5000 offers very low forward voltage drop, reducing energy losses in high-speed switching applications.
  • Negligible Switching Losses: With low forward and reverse recovery times, this diode minimizes switching losses, making it ideal for high-frequency operations.
  • Low Capacitance: The diode features low capacitance, which is crucial for maintaining signal integrity in RF and high-speed applications.
  • Surface Mount Device: Available in various surface mount packages such as SOD-123, SOD-323, SOT-23, and others, making it easy to integrate into modern PCB designs.
  • High Temperature Stability: The component can operate up to a maximum junction temperature of 150°C, ensuring reliability in demanding environments.

Applications

  • RF Applications: The BAS70-05B5000 is specially suited for signal detection and temperature compensation in RF circuits due to its low capacitance and fast switching times.
  • High-Speed Switching: Ideal for applications requiring fast switching, such as in power supplies, DC-DC converters, and other high-speed electronic circuits.
  • Circuit Protection: Can be used for voltage clamping and circuit protection due to its high surge current capability and low forward voltage drop.
  • General-Purpose Diode: Suitable for a wide range of general-purpose applications where low conduction losses and fast recovery times are essential.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the BAS70-05B5000?

    The maximum repetitive peak reverse voltage (VRRM) is 70 V.

  2. What is the continuous forward current rating of the BAS70-05B5000?

    The continuous forward current (IF) is 70 mA.

  3. What is the maximum operating junction temperature of the BAS70-05B5000?

    The maximum operating junction temperature (Tj) is 150°C.

  4. What is the typical forward voltage drop at 10 mA?

    The typical forward voltage drop (VF) at 10 mA is 750 mV.

  5. What is the diode capacitance at 1 MHz?

    The diode capacitance (C) at 1 MHz is 2 pF.

  6. In what packages is the BAS70-05B5000 available?

    The BAS70-05B5000 is available in packages such as SOD-123, SOD-323, SOT-23, and others.

  7. What are the primary applications of the BAS70-05B5000?

    The primary applications include RF applications, high-speed switching, circuit protection, and general-purpose use.

  8. What is the storage temperature range for the BAS70-05B5000?

    The storage temperature range (Tstg) is -55 to +150°C.

  9. What is the surge non-repetitive forward current rating for a 10 ms pulse?

    The surge non-repetitive forward current (IFSM) for a 10 ms pulse is 1 A.

  10. Why is the BAS70-05B5000 suitable for RF applications?

    It is suitable due to its low capacitance, low series inductance, and resistance, as well as its fast switching times.

Product Attributes

Diode Configuration:- 
Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io) (per Diode):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Operating Temperature - Junction:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BAS70-05B5000 BAS70-06B5000 BAS70-05B5003 BAS70-04B5000
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Diode Configuration - - - -
Diode Type - - - -
Voltage - DC Reverse (Vr) (Max) - - - -
Current - Average Rectified (Io) (per Diode) - - - -
Voltage - Forward (Vf) (Max) @ If - - - -
Speed - - - -
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr - - - -
Operating Temperature - Junction - - - -
Mounting Type - - - -
Package / Case - - - -
Supplier Device Package - - - -

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