IPD30N10S3L34ATMA1
  • Share:

Infineon Technologies IPD30N10S3L34ATMA1

Manufacturer No:
IPD30N10S3L34ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 30A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IPD30N10S3L34ATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies. Designed for power management applications, this component is part of Infineon's OptiMOS™ series, which is renowned for its efficiency and reliability. The IPD30N10S3L34ATMA1 is targeted at industries requiring robust power switching solutions, such as automotive, industrial automation, and consumer electronics. Its unique selling points include low on-resistance, high current handling capability, and excellent thermal performance, making it a competitive choice in its category.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)30A
On-Resistance (RDS(on))34@ VGS = 10 V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)83W
Operating Temperature Range-55 to +175°C
PackageTO-252 (DPAK)

Key Features

  • Low on-resistance for reduced power losses.
  • High current handling capability for demanding applications.
  • Excellent thermal performance for reliable operation.
  • Optimized for fast switching in power management systems.
  • RoHS compliant, ensuring environmental safety.

Applications

The IPD30N10S3L34ATMA1 is widely used in various applications, including automotive systems (e.g., motor control, LED lighting), industrial automation (e.g., power supplies, motor drives), and consumer electronics (e.g., battery management, DC-DC converters). Its high efficiency and reliability make it suitable for applications requiring robust power switching and thermal management.

Q & A

1. What is the maximum drain-source voltage of the IPD30N10S3L34ATMA1?

The maximum drain-source voltage is 100 V.

2. What is the continuous drain current rating?

The continuous drain current rating is 30 A.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 34 mΩ at a gate-source voltage of 10 V.

4. What package does the IPD30N10S3L34ATMA1 use?

It uses the TO-252 (DPAK) package.

5. Is this component suitable for automotive applications?

Yes, it is widely used in automotive systems such as motor control and LED lighting.

6. What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

7. Does the IPD30N10S3L34ATMA1 support fast switching?

Yes, it is optimized for fast switching in power management systems.

8. Is this MOSFET RoHS compliant?

Yes, it is RoHS compliant, ensuring environmental safety.

9. What are the key advantages of using this MOSFET?

Its key advantages include low on-resistance, high current handling capability, and excellent thermal performance.

10. Can this MOSFET be used in industrial automation?

Yes, it is suitable for industrial automation applications such as power supplies and motor drives.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1976 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.64
129

Please send RFQ , we will respond immediately.

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

BAT5405E6327HTSA1
BAT5405E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS4006E6327HTSA1
BAS4006E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV 99S H6827
BAV 99S H6827
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS4002LE6327XTMA1
BAS4002LE6327XTMA1
Infineon Technologies
DIODE SCHOTTKY 40V 120MA TSLP-2
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
BC817SUE6327HTSA1
BC817SUE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SC74-6
BCP6925E6327HTSA1
BCP6925E6327HTSA1
Infineon Technologies
TRANS PNP 20V 1A SOT223-4
BCX5216E6433HTMA1
BCX5216E6433HTMA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
IPB042N10N3GE8187ATMA1
IPB042N10N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A D2PAK
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5
BSP762TNT
BSP762TNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8