IPD30N10S3L34ATMA1
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Infineon Technologies IPD30N10S3L34ATMA1

Manufacturer No:
IPD30N10S3L34ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 30A TO252-3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The IPD30N10S3L34ATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies. Designed for power management applications, this component is part of Infineon's OptiMOS™ series, which is renowned for its efficiency and reliability. The IPD30N10S3L34ATMA1 is targeted at industries requiring robust power switching solutions, such as automotive, industrial automation, and consumer electronics. Its unique selling points include low on-resistance, high current handling capability, and excellent thermal performance, making it a competitive choice in its category.

Key Specifications

ParameterValueUnitNotes
Drain-Source Voltage (VDS)100V
Continuous Drain Current (ID)30A
On-Resistance (RDS(on))34@ VGS = 10 V
Gate-Source Voltage (VGS)±20V
Power Dissipation (PD)83W
Operating Temperature Range-55 to +175°C
PackageTO-252 (DPAK)

Key Features

  • Low on-resistance for reduced power losses.
  • High current handling capability for demanding applications.
  • Excellent thermal performance for reliable operation.
  • Optimized for fast switching in power management systems.
  • RoHS compliant, ensuring environmental safety.

Applications

The IPD30N10S3L34ATMA1 is widely used in various applications, including automotive systems (e.g., motor control, LED lighting), industrial automation (e.g., power supplies, motor drives), and consumer electronics (e.g., battery management, DC-DC converters). Its high efficiency and reliability make it suitable for applications requiring robust power switching and thermal management.

Q & A

1. What is the maximum drain-source voltage of the IPD30N10S3L34ATMA1?

The maximum drain-source voltage is 100 V.

2. What is the continuous drain current rating?

The continuous drain current rating is 30 A.

3. What is the typical on-resistance of this MOSFET?

The typical on-resistance is 34 mΩ at a gate-source voltage of 10 V.

4. What package does the IPD30N10S3L34ATMA1 use?

It uses the TO-252 (DPAK) package.

5. Is this component suitable for automotive applications?

Yes, it is widely used in automotive systems such as motor control and LED lighting.

6. What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

7. Does the IPD30N10S3L34ATMA1 support fast switching?

Yes, it is optimized for fast switching in power management systems.

8. Is this MOSFET RoHS compliant?

Yes, it is RoHS compliant, ensuring environmental safety.

9. What are the key advantages of using this MOSFET?

Its key advantages include low on-resistance, high current handling capability, and excellent thermal performance.

10. Can this MOSFET be used in industrial automation?

Yes, it is suitable for industrial automation applications such as power supplies and motor drives.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1976 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$1.64
129

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