CSD87313DMS
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Texas Instruments CSD87313DMS

Manufacturer No:
CSD87313DMS
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET 2 N-CHANNEL 30V 8WSON
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The CSD87313DMS is a 30-V common drain, dual N-channel MOSFET device produced by Texas Instruments. This device is designed specifically for applications such as USB Type-C/Power Delivery (PD) and battery protection. It features a small SON 3.3-mm × 3.3-mm plastic package, making it ideal for space-constrained designs. The CSD87313DMS offers low-source-to-source on resistance, which minimizes losses and reduces the overall component count in the system.

Key Specifications

ParameterValueUnit
Source1-to-Source2 Voltage (VS1S2)30V
Gate-to-Source Voltage (VGS)±10V
Continuous Source Current (IS1S2)17A
Pulsed Source Current (ISM)120A
Power Dissipation (PD)2.7W
Operating Junction Temperature (TJ)-55 to 150°C
Threshold Voltage (VGS(th))0.9V
Source1-to-Source2 On Resistance (RS1S2(on)) at VGS = 4.5 V5.5
Gate Charge (Qg) at VGS = 4.5 V28nC
Gate Charge Gate-to-Drain (Qgd)6.0nC

Key Features

  • Low-source-to-source on resistance to minimize losses.
  • Dual common drain N-channel MOSFETs.
  • Optimized for 5-V gate drive.
  • Low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Lead-free terminal plating.
  • RoHS compliant and halogen-free.
  • SON 3.3-mm × 3.3-mm plastic package.

Applications

  • USB Type-C and Power Delivery (PD) VBus protection.
  • Battery protection.
  • Load switch applications.

Q & A

  1. What is the maximum source-to-source voltage for the CSD87313DMS?
    The maximum source-to-source voltage is 30 V.
  2. What is the typical on-resistance of the CSD87313DMS at VGS = 4.5 V?
    The typical on-resistance is 5.5 mΩ.
  3. What are the key applications of the CSD87313DMS?
    The key applications include USB Type-C/PD VBus protection, battery protection, and load switch applications.
  4. Is the CSD87313DMS RoHS compliant and halogen-free?
    Yes, the CSD87313DMS is RoHS compliant and halogen-free.
  5. What is the package type of the CSD87313DMS?
    The package type is SON 3.3-mm × 3.3-mm plastic package.
  6. What is the maximum continuous source current for the CSD87313DMS?
    The maximum continuous source current is 17 A.
  7. What is the gate charge (Qg) at VGS = 4.5 V for the CSD87313DMS?
    The gate charge (Qg) at VGS = 4.5 V is 28 nC.
  8. Is the CSD87313DMS optimized for 5-V gate drive?
    Yes, the CSD87313DMS is optimized for 5-V gate drive.
  9. What is the operating junction temperature range for the CSD87313DMS?
    The operating junction temperature range is -55 to 150 °C.
  10. What is the avalanche energy rating for the CSD87313DMS?
    The avalanche energy rating is 67 mJ for a single pulse.

Product Attributes

FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:4290pF @ 15V
Power - Max:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-WSON (3.3x3.3)
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Similar Products

Part Number CSD87313DMS CSD87313DMST
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id 1.25V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 15V 4290pF @ 15V
Power - Max - 2.7W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerWDFN 8-PowerWDFN
Supplier Device Package 8-WSON (3.3x3.3) 8-WSON (3.3x3.3)

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