FDC6327C
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onsemi FDC6327C

Manufacturer No:
FDC6327C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 20V SSOT-6
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDC6327C is a dual N and P-channel MOSFET produced by onsemi, utilizing the advanced PowerTrench process. This MOSFET is designed to minimize on-state resistance and maximize performance in various power management applications. It is packaged in a 6-pin SuperSOT™-6 surface mount package, making it suitable for compact and efficient designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Continuous Drain Current)N-Channel: 2.7 A, P-Channel: 1.9 A
VGS(th) (Threshold Voltage)2.5 V
RDS(on) (On-State Resistance)N-Channel: 70 mΩ, P-Channel: 120 mΩ (typical at VGS = 4.5 V)
Package6-Pin SuperSOT™-6

Key Features

  • Advanced PowerTrench technology for low on-state resistance and high efficiency.
  • Dual N and P-channel configuration for balanced performance.
  • Compact SuperSOT™-6 package for space-saving designs.
  • Low threshold voltage (VGS(th)) of 2.5 V for easy switching.
  • High continuous drain current capability (N-Channel: 2.7 A, P-Channel: 1.9 A).

Applications

The FDC6327C is suitable for a variety of power management and switching applications, including:

  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Audio and video switching circuits.
  • General-purpose power switching.

Q & A

  1. What is the drain-source voltage rating of the FDC6327C?
    The drain-source voltage rating is 20 V.
  2. What is the continuous drain current for the N and P-channels?
    The continuous drain current is 2.7 A for the N-channel and 1.9 A for the P-channel.
  3. What is the threshold voltage of the FDC6327C?
    The threshold voltage is 2.5 V.
  4. What package type is the FDC6327C available in?
    The FDC6327C is available in a 6-pin SuperSOT™-6 package.
  5. What technology is used in the FDC6327C?
    The FDC6327C uses onsemi's advanced PowerTrench process.
  6. What are some typical applications for the FDC6327C?
    Typical applications include DC-DC converters, motor control systems, audio and video switching circuits, and general-purpose power switching.
  7. What is the on-state resistance of the FDC6327C?
    The on-state resistance is typically 70 mΩ for the N-channel and 120 mΩ for the P-channel at VGS = 4.5 V.
  8. Is the FDC6327C suitable for high-frequency applications?
    Yes, the FDC6327C is suitable for high-frequency applications due to its low on-state resistance and fast switching times.
  9. Where can I find detailed specifications for the FDC6327C?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other distributor sites like Digi-Key and Mouser.
  10. What are the benefits of using the PowerTrench technology in the FDC6327C?
    The PowerTrench technology minimizes on-state resistance, enhances efficiency, and improves overall performance in power management applications.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.7A, 1.9A
Rds On (Max) @ Id, Vgs:80mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:325pF @ 10V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
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Similar Products

Part Number FDC6327C FDC6320C FDC6321C FDC6322C
Manufacturer onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor
Product Status Active Active Active Obsolete
FET Type N and P-Channel N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 25V 25V 25V
Current - Continuous Drain (Id) @ 25°C 2.7A, 1.9A 220mA, 120mA 680mA, 460mA 220mA, 460mA
Rds On (Max) @ Id, Vgs 80mOhm @ 2.7A, 4.5V 4Ohm @ 400mA, 4.5V 450mOhm @ 500mA, 4.5V 4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V 0.4nC @ 4.5V 2.3nC @ 5V 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 10V 9.5pF @ 10V 50pF @ 10V 9.5pF @ 10V
Power - Max 700mW 700mW 700mW 700mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6

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