FDC6420C
  • Share:

onsemi FDC6420C

Manufacturer No:
FDC6420C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 20V 3A/2.2A SSOT-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC6420C is a dual-protected low-side smart, discrete device produced by onsemi (formerly Fairchild Semiconductor). This component is designed with advanced PowerTrench technology, which minimizes on-state resistance, making it highly efficient for various power management and motor driver applications. The FDC6420C features a standard 40V gate level power MOSFET, which is suitable for a wide range of electronic systems requiring reliable and high-performance switching capabilities.

Key Specifications

ParameterValue
Voltage Rating (Vds)20V
Current Rating (Id)3A (N-Channel), 2.2A (P-Channel)
On-Resistance (Rds(on))Leading on-resistance due to PowerTrench process
Package TypeSurface Mount SuperSOT™-6
Power Dissipation (Pd)700mW
Temperature Range-55°C to 150°C (Junction Temperature)

Key Features

  • Dual-protected low-side smart, discrete device
  • Advanced PowerTrench process for minimized on-state resistance
  • Standard 40V gate level power MOSFET
  • Temperature and current limit protection
  • Complementary N & P-Channel MOSFETs
  • Surface Mount SuperSOT™-6 package for compact design

Applications

The FDC6420C is particularly suited for motor driver applications, power management systems, and other electronic circuits that require high-performance switching and reliable protection features. It is also applicable in various industrial, automotive, and consumer electronics where efficient power handling is crucial.

Q & A

  1. What is the voltage rating of the FDC6420C MOSFET? The voltage rating (Vds) of the FDC6420C is 20V.
  2. What is the current rating of the FDC6420C? The current rating (Id) is 3A for the N-Channel and 2.2A for the P-Channel.
  3. What package type does the FDC6420C use? The FDC6420C uses a Surface Mount SuperSOT™-6 package.
  4. What is the power dissipation of the FDC6420C? The power dissipation (Pd) is 700mW.
  5. What are the key protection features of the FDC6420C? The FDC6420C features temperature and current limit protection.
  6. What is the temperature range of the FDC6420C? The junction temperature range is -55°C to 150°C.
  7. What process is used to manufacture the FDC6420C? The FDC6420C is produced using an advanced PowerTrench process.
  8. What are the typical applications of the FDC6420C? The FDC6420C is typically used in motor driver applications, power management systems, and other electronic circuits requiring high-performance switching.
  9. Is the FDC6420C available in stock? Yes, the FDC6420C is available in stock from various distributors such as Digi-Key and Mouser.
  10. What is the significance of the PowerTrench process in the FDC6420C? The PowerTrench process minimizes on-state resistance, making the FDC6420C highly efficient for power management and switching applications.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3A, 2.2A
Rds On (Max) @ Id, Vgs:70mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:324pF @ 10V
Power - Max:700mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:SuperSOT™-6
0 Remaining View Similar

In Stock

$0.59
1,162

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDC6420C FDC6320C
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 25V
Current - Continuous Drain (Id) @ 25°C 3A, 2.2A 220mA, 120mA
Rds On (Max) @ Id, Vgs 70mOhm @ 3A, 4.5V 4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 324pF @ 10V 9.5pF @ 10V
Power - Max 700mW 700mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6 SuperSOT™-6

Related Product By Categories

NX3008NBKS,115
NX3008NBKS,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.35A 6TSSOP
NX1029X,115
NX1029X,115
Nexperia USA Inc.
MOSFET N/P-CH 60V/50V SOT666
NTND31015NZTAG
NTND31015NZTAG
onsemi
MOSFET 2N-CH 20V 200MA 6XLLGA
FDG6316P
FDG6316P
onsemi
MOSFET 2P-CH 12V 0.7A SC70-6
NTLUD3A50PZTAG
NTLUD3A50PZTAG
onsemi
MOSFET 2P-CH 20V 2.8A UDFN
FDPC8016S
FDPC8016S
onsemi
MOSFET 2N-CH 25V 8PWRCLIP
STL8DN6LF3
STL8DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
NVJD5121NT1G
NVJD5121NT1G
onsemi
MOSFET 2N-CH 60V 0.295A SC88
NTMFD4901NFT1G
NTMFD4901NFT1G
onsemi
MOSFET 2N-CH 30V 8DFN
FDG6322C_D87Z
FDG6322C_D87Z
onsemi
MOSFET N/P-CH 25V SC70-6
2N7002DW-7-G
2N7002DW-7-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363
FDG6332C-PG
FDG6332C-PG
onsemi
MOSFET N P-CH 20V SC70-6

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NC7SZ57P6X
NC7SZ57P6X
onsemi
IC LOGIC GATE UNIV 2INPUT SC70-6
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK