Overview
The BSS84V-7, produced by Diodes Incorporated, is a P-Channel Enhancement Mode Field-Effect Transistor (MOSFET) designed for high-efficiency power management applications. This MOSFET is optimized to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. It is available in a SOT-23-3 package, making it suitable for a variety of applications requiring low on-resistance and fast switching speeds.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -50 | V |
| Gate-Source Voltage Continuous | VGSS | ±20 | V |
| Drain Current - Continuous | ID | -130 | mA |
| Drain-Source On Resistance - Max | RDS(on) | 10 | Ω @ VGS = -5V |
| Maximum Power Dissipation | PD | 150 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 833 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Input Capacitance | Ciss | 45 | pF @ VDS = -25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 25 | pF |
| Reverse Transfer Capacitance | Crss | 12 | pF |
| Turn-On Delay Time | tD(on) | 10 | ns @ VDD = -30V, ID = -0.27A, VGS = -10V, RGEN = 50Ω |
| Turn-Off Delay Time | tD(off) | 18 | ns |
Key Features
- Low On-Resistance: Minimized on-state resistance (RDS(on)) of 10Ω at VGS = -5V.
- Low Gate Threshold Voltage: Ensures easy switching and control.
- Low Input Capacitance: Reduces the load on the gate drive circuit.
- Fast Switching Speed: Ideal for applications requiring quick and efficient switching.
- Low Input/Output Leakage: Minimizes power loss and enhances overall efficiency.
- Totally Lead-Free & Fully RoHS Compliant: Meets environmental and regulatory standards.
- Halogen and Antimony Free: A “green” device, compliant with environmental regulations.
Applications
- General Purpose Interfacing Switches: Suitable for various switching applications.
- Power Management Functions: Ideal for high-efficiency power management in electronic devices.
- Analog Switches: Can be used in analog circuits requiring low on-resistance and fast switching.
Q & A
- What is the maximum drain-source voltage of the BSS84V-7 MOSFET?
The maximum drain-source voltage (VDSS) is -50V.
- What is the typical on-state resistance (RDS(on)) of the BSS84V-7?
The typical on-state resistance (RDS(on)) is 10Ω at VGS = -5V.
- What is the maximum continuous drain current of the BSS84V-7?
The maximum continuous drain current (ID) is -130mA.
- What is the thermal resistance, junction to ambient, of the BSS84V-7?
The thermal resistance, junction to ambient (RθJA), is 833°C/W.
- What is the operating and storage temperature range of the BSS84V-7?
The operating and storage temperature range is -55°C to +150°C.
- Is the BSS84V-7 MOSFET RoHS compliant?
Yes, the BSS84V-7 is totally lead-free and fully RoHS compliant.
- What package type is the BSS84V-7 available in?
The BSS84V-7 is available in a SOT-23-3 package.
- What are some typical applications of the BSS84V-7 MOSFET?
Typical applications include general purpose interfacing switches, power management functions, and analog switches.
- What is the input capacitance of the BSS84V-7 MOSFET?
The input capacitance (Ciss) is 45pF at VDS = -25V, VGS = 0V, and f = 1.0MHz.
- How fast is the switching speed of the BSS84V-7 MOSFET?
The BSS84V-7 has a fast switching speed, with a turn-on delay time of 10ns and a turn-off delay time of 18ns.
