NX3020NAKVYL
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Nexperia USA Inc. NX3020NAKVYL

Manufacturer No:
NX3020NAKVYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 0.2A SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3020NAKVYL, produced by Nexperia USA Inc., is a dual N-channel enhancement mode Field-Effect Transistor (FET) designed for high-performance applications. This MOSFET is housed in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) package, making it ideal for space-constrained designs. The device features a low on-state resistance and high current handling capabilities, making it suitable for a variety of electronic systems.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 30 V
Continuous Drain Current (Id) 200 mA
On Resistance (Rds(on)) 2.7 Ω
Gate-Source Threshold Voltage (Vgs(th)) 1.2 V
Power Dissipation (Pd) 260 mW
Operating Temperature Max 150 °C
Transistor Case Style SOT-666
No. of Pins 6

Key Features

  • Dual N-channel enhancement mode Field-Effect Transistor (FET)
  • Ultra small and flat lead SOT666 Surface-Mounted Device (SMD) package
  • Low on-state resistance of 2.7 Ω
  • High current handling capability of 200 mA per channel
  • High drain-source breakdown voltage of 30 V
  • Low gate-source threshold voltage of 1.2 V
  • Surface mount technology for easy integration into modern designs

Applications

  • Power management and switching circuits
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive and industrial control systems
  • Consumer electronics and portable devices

Q & A

  1. What is the drain-source voltage rating of the NX3020NAKVYL?

    The drain-source voltage rating is 30 V.

  2. What is the continuous drain current of the NX3020NAKVYL?

    The continuous drain current is 200 mA per channel.

  3. What is the on-state resistance of the NX3020NAKVYL?

    The on-state resistance (Rds(on)) is 2.7 Ω.

  4. What is the gate-source threshold voltage of the NX3020NAKVYL?

    The gate-source threshold voltage (Vgs(th)) is 1.2 V.

  5. What is the maximum operating temperature of the NX3020NAKVYL?

    The maximum operating temperature is 150 °C.

  6. What package type is the NX3020NAKVYL available in?

    The NX3020NAKVYL is available in the SOT-666 package.

  7. How many pins does the NX3020NAKVYL have?

    The NX3020NAKVYL has 6 pins.

  8. What are some common applications of the NX3020NAKVYL?

    Common applications include power management, DC-DC converters, motor control, automotive systems, and consumer electronics.

  9. Is the NX3020NAKVYL RoHS compliant?

    There is no specific RoHS information available, but it is recommended to check the latest documentation from Nexperia for compliance details.

  10. What is the power dissipation capability of the NX3020NAKVYL?

    The power dissipation (Pd) is 260 mW per channel.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:200mA
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 10V
Power - Max:260mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
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Same Series
NX3020NAKV,115
NX3020NAKV,115
MOSFET 2N-CH 30V 200MA SOT666

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