NX3020NAKVYL
  • Share:

Nexperia USA Inc. NX3020NAKVYL

Manufacturer No:
NX3020NAKVYL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 0.2A SOT666
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3020NAKVYL, produced by Nexperia USA Inc., is a dual N-channel enhancement mode Field-Effect Transistor (FET) designed for high-performance applications. This MOSFET is housed in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) package, making it ideal for space-constrained designs. The device features a low on-state resistance and high current handling capabilities, making it suitable for a variety of electronic systems.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vds) 30 V
Continuous Drain Current (Id) 200 mA
On Resistance (Rds(on)) 2.7 Ω
Gate-Source Threshold Voltage (Vgs(th)) 1.2 V
Power Dissipation (Pd) 260 mW
Operating Temperature Max 150 °C
Transistor Case Style SOT-666
No. of Pins 6

Key Features

  • Dual N-channel enhancement mode Field-Effect Transistor (FET)
  • Ultra small and flat lead SOT666 Surface-Mounted Device (SMD) package
  • Low on-state resistance of 2.7 Ω
  • High current handling capability of 200 mA per channel
  • High drain-source breakdown voltage of 30 V
  • Low gate-source threshold voltage of 1.2 V
  • Surface mount technology for easy integration into modern designs

Applications

  • Power management and switching circuits
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive and industrial control systems
  • Consumer electronics and portable devices

Q & A

  1. What is the drain-source voltage rating of the NX3020NAKVYL?

    The drain-source voltage rating is 30 V.

  2. What is the continuous drain current of the NX3020NAKVYL?

    The continuous drain current is 200 mA per channel.

  3. What is the on-state resistance of the NX3020NAKVYL?

    The on-state resistance (Rds(on)) is 2.7 Ω.

  4. What is the gate-source threshold voltage of the NX3020NAKVYL?

    The gate-source threshold voltage (Vgs(th)) is 1.2 V.

  5. What is the maximum operating temperature of the NX3020NAKVYL?

    The maximum operating temperature is 150 °C.

  6. What package type is the NX3020NAKVYL available in?

    The NX3020NAKVYL is available in the SOT-666 package.

  7. How many pins does the NX3020NAKVYL have?

    The NX3020NAKVYL has 6 pins.

  8. What are some common applications of the NX3020NAKVYL?

    Common applications include power management, DC-DC converters, motor control, automotive systems, and consumer electronics.

  9. Is the NX3020NAKVYL RoHS compliant?

    There is no specific RoHS information available, but it is recommended to check the latest documentation from Nexperia for compliance details.

  10. What is the power dissipation capability of the NX3020NAKVYL?

    The power dissipation (Pd) is 260 mW per channel.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:200mA
Rds On (Max) @ Id, Vgs:4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 10V
Power - Max:260mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-666
0 Remaining View Similar

In Stock

$0.09
5,842

Please send RFQ , we will respond immediately.

Same Series
NX3020NAKVYL
NX3020NAKVYL
MOSFET 2N-CH 30V 0.2A SOT666

Related Product By Categories

STS1DNC45
STS1DNC45
STMicroelectronics
MOSFET 2N-CH 450V 0.4A 8SOIC
CSD88599Q5DCT
CSD88599Q5DCT
Texas Instruments
MOSFET 2N-CH 60V 22-VSON-CLIP
NVMFD5C462NT1G
NVMFD5C462NT1G
onsemi
40V 5.4 MOHM T8 S08FL DUA
NTMFD5C674NLT1G
NTMFD5C674NLT1G
onsemi
T6 60V LL S08FL DS
2N7002DWS-7
2N7002DWS-7
Diodes Incorporated
MOSFET BVDSS: 41V-60V SOT363
PMDPB55XP,115
PMDPB55XP,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3.4A 6HUSON
NTMFD4901NFT1G
NTMFD4901NFT1G
onsemi
MOSFET 2N-CH 30V 8DFN
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
NDC7002N_SB9G007
NDC7002N_SB9G007
onsemi
MOSFET 2N-CH 50V 0.51A 6-SSOT
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NTMFD4C85NT1G
NTMFD4C85NT1G
onsemi
MOSFET 2N-CH 30V 8DFN
2N7002DW-7-F-79
2N7002DW-7-F-79
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
BZV55-B12,135
BZV55-B12,135
Nexperia USA Inc.
DIODE ZENER 12V 500MW LLDS
PDZ22B-QZ
PDZ22B-QZ
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
BC850CW/ZLX
BC850CW/ZLX
Nexperia USA Inc.
TRANS NPN SOT323
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
PBSS304NZ,135
PBSS304NZ,135
Nexperia USA Inc.
TRANS NPN 60V 5.2A SOT223
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74HC540DB,112
74HC540DB,112
Nexperia USA Inc.
IC BUFFER INVERT 6V 20SSOP
74LVC138APW,112
74LVC138APW,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16TSSOP