PMDXB550UNEZ
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Nexperia USA Inc. PMDXB550UNEZ

Manufacturer No:
PMDXB550UNEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 0.59A 6DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMDXB550UNEZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component is designed for high-performance applications requiring efficient switching and amplification. It features an exposed drain pad, which enhances thermal conduction and provides ESD protection. The PMDXB550UNEZ is packaged in a 6-XFDFN exposed pad configuration, making it suitable for surface mount applications.

Key Specifications

Parameter Value
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 590 mA
Rds On - Drain-Source On Resistance 0.55 Ohm
Max Power Dissipation 285 mW
Package 6-XFDFN Exposed Pad
Operating Mode Enhancement Mode
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Dual N-channel enhancement mode FET for efficient switching and amplification.
  • Exposed drain pad for excellent thermal conduction and ESD protection.
  • Low on-resistance (Rds On) of 0.55 Ohm.
  • Continuous drain current of 590 mA.
  • Drain-source breakdown voltage of 30 V.
  • Surface mount package in 6-XFDFN configuration.
  • ROHS3 compliant, ensuring environmental sustainability.

Applications

The PMDXB550UNEZ is suitable for a variety of applications, including:

  • Power management and switching circuits.
  • Audio and video amplifiers.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Consumer electronics requiring high-efficiency switching.

Q & A

  1. What is the PMDXB550UNEZ?

    The PMDXB550UNEZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.

  2. What is the package type of the PMDXB550UNEZ?

    The PMDXB550UNEZ is packaged in a 6-XFDFN exposed pad configuration.

  3. What is the continuous drain current of the PMDXB550UNEZ?

    The continuous drain current is 590 mA.

  4. What is the drain-source breakdown voltage of the PMDXB550UNEZ?

    The drain-source breakdown voltage is 30 V.

  5. Is the PMDXB550UNEZ ROHS compliant?

    Yes, the PMDXB550UNEZ is ROHS3 compliant.

  6. What is the maximum power dissipation of the PMDXB550UNEZ?

    The maximum power dissipation is 285 mW.

  7. What are the typical applications of the PMDXB550UNEZ?

    Typical applications include power management, audio and video amplifiers, motor control, industrial automation, and consumer electronics.

  8. Does the PMDXB550UNEZ have ESD protection?

    Yes, the exposed drain pad provides ESD protection.

  9. What is the on-resistance (Rds On) of the PMDXB550UNEZ?

    The on-resistance (Rds On) is 0.55 Ohm.

  10. What is the moisture sensitivity level (MSL) of the PMDXB550UNEZ?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:590mA
Rds On (Max) @ Id, Vgs:670mOhm @ 590mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.05nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:30.3pF @ 15V
Power - Max:285mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFDFN Exposed Pad
Supplier Device Package:DFN1010B-6
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