BSS138PS,115
  • Share:

Nexperia USA Inc. BSS138PS,115

Manufacturer No:
BSS138PS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.32A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138PS,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance applications requiring fast switching and low on-state resistance. The BSS138PS is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Key Specifications

Parameter Value Unit
VDS (max) 60 V
ID (max) 0.32 A
RDSon (max) @ VGS = 10 V 1600
RDSon (max) @ VGS = 5 V 2000
Tj (max) 150 °C
Ptot (max) @ Tamb = 25 °C 280 mW mW
VGSth (typ) 1.2 V
Ciss (typ) 38 pF
Coss (typ) 7 pF

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for high efficiency and low on-state resistance
  • AEC-Q101 qualified for automotive applications

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS138PS?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the maximum continuous drain current (ID) of the BSS138PS?

    The maximum continuous drain current (ID) is 0.32 A.

  3. What is the typical gate-source threshold voltage (VGSth) of the BSS138PS?

    The typical gate-source threshold voltage (VGSth) is 1.2 V.

  4. Is the BSS138PS AEC-Q101 qualified?

    Yes, the BSS138PS is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the package type of the BSS138PS?

    The BSS138PS is packaged in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

  6. What are some common applications of the BSS138PS?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  7. What is the maximum junction temperature (Tj) of the BSS138PS?

    The maximum junction temperature (Tj) is 150 °C.

  8. What is the total power dissipation (Ptot) at 25 °C ambient temperature?

    The total power dissipation (Ptot) at 25 °C ambient temperature is 280 mW.

  9. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?

    The typical input capacitance (Ciss) is 38 pF, and the typical output capacitance (Coss) is 7 pF.

  10. How can I obtain samples of the BSS138PS?

    Samples can be obtained through Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:320mA
Rds On (Max) @ Id, Vgs:1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
Power - Max:420mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
0 Remaining View Similar

In Stock

$0.45
1,166

Please send RFQ , we will respond immediately.

Related Product By Categories

EFC2J013NUZTDG
EFC2J013NUZTDG
onsemi
MOSFET N-CH 12V 17A WLCSP6 DUAL
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
STL8DN6LF3
STL8DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
NX3008NBKSH
NX3008NBKSH
Nexperia USA Inc.
MOSFET 2 N-CH 30V 350MA 6TSSOP
STL7DN6LF3
STL7DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
CSD86350Q5DT
CSD86350Q5DT
Texas Instruments
25V POWERBLOCK N CH MOSFET
NVMFD5C478NLT1G
NVMFD5C478NLT1G
onsemi
40V 14.5 MOHM T8 S08FL DU
FDS8949-F085
FDS8949-F085
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 6
FDG6332C-F085
FDG6332C-F085
onsemi
MOSFET N/P-CH 20V SC70-6
PHKD13N03LT,118
PHKD13N03LT,118
Nexperia USA Inc.
MOSFET 2N-CH 30V 10.4A 8SOIC
NTMFD4C86NT1G
NTMFD4C86NT1G
onsemi
MOSFET 2N-CH 30V 8DFN
FDG6303N_G
FDG6303N_G
onsemi
INTEGRATED CIRCUIT

Related Product By Brand

PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BZX84-B22,215
BZX84-B22,215
Nexperia USA Inc.
DIODE ZENER 22V 250MW TO236AB
BZX84-C9V1/DG/B4R
BZX84-C9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.05V 250MW TO236AB
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74HC85DB,118
74HC85DB,118
Nexperia USA Inc.
NEXPERIA 74HC85DB - MAGNITUDE CO
74LVC273D,112
74LVC273D,112
Nexperia USA Inc.
NEXPERIA 74LVC273D - D FLIP-FLOP
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74AHC04D-Q100J
74AHC04D-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO