PMGD175XN,115
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NXP USA Inc. PMGD175XN,115

Manufacturer No:
PMGD175XN,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 0.9A 6TSSOP
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The PMGD175XN,115 is a dual N-channel MOSFET produced by NXP USA Inc. This component is designed for a variety of applications requiring high performance and reliability. It is packaged in a 6-TSSOP (SOT-363) package, making it suitable for space-constrained designs. The MOSFET is known for its low on-resistance and high current handling capabilities, making it an excellent choice for power management and switching applications.

Key Specifications

ParameterValue
ManufacturerNXP USA Inc.
Package6-TSSOP (SOT-363)
FET TypeDual N-channel
Drain-Source Voltage (Vdss)30V
Continuous Drain Current (Id) at 25°C900mA
Maximum Power Dissipation390mW

Key Features

  • Dual N-channel MOSFET configuration for enhanced performance in power management and switching applications.
  • Low on-resistance, reducing power losses and improving efficiency.
  • High current handling capability of up to 900mA at 25°C.
  • Compact 6-TSSOP (SOT-363) package, ideal for space-constrained designs.
  • Maximum drain-source voltage of 30V, suitable for a wide range of applications.

Applications

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial control systems.
  • Consumer electronics requiring efficient power handling.

Q & A

  1. What is the package type of the PMGD175XN,115 MOSFET?
    The PMGD175XN,115 is packaged in a 6-TSSOP (SOT-363) package.
  2. What is the maximum drain-source voltage (Vdss) of the PMGD175XN,115?
    The maximum drain-source voltage (Vdss) is 30V.
  3. What is the continuous drain current (Id) at 25°C for the PMGD175XN,115?
    The continuous drain current (Id) at 25°C is 900mA.
  4. What is the maximum power dissipation of the PMGD175XN,115?
    The maximum power dissipation is 390mW.
  5. In what types of applications is the PMGD175XN,115 commonly used?
    The PMGD175XN,115 is commonly used in power management and switching circuits, DC-DC converters, motor control systems, and automotive and industrial control systems.
  6. Who is the manufacturer of the PMGD175XN,115 MOSFET?
    The manufacturer is NXP USA Inc.
  7. What are the key features of the PMGD175XN,115 MOSFET?
    The key features include dual N-channel configuration, low on-resistance, high current handling, and a compact 6-TSSOP package.
  8. Is the PMGD175XN,115 suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high current handling and low on-resistance.
  9. Can the PMGD175XN,115 be used in automotive applications?
    Yes, it can be used in automotive applications due to its robust specifications and reliability.
  10. Where can I find the datasheet for the PMGD175XN,115?
    The datasheet can be found on the official NXP website or through distributors like Ariat-Tech and Octopart.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:900mA
Rds On (Max) @ Id, Vgs:225mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:75pF @ 15V
Power - Max:390mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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