PMGD175XN,115
  • Share:

NXP USA Inc. PMGD175XN,115

Manufacturer No:
PMGD175XN,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 30V 0.9A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMGD175XN,115 is a dual N-channel MOSFET produced by NXP USA Inc. This component is designed for a variety of applications requiring high performance and reliability. It is packaged in a 6-TSSOP (SOT-363) package, making it suitable for space-constrained designs. The MOSFET is known for its low on-resistance and high current handling capabilities, making it an excellent choice for power management and switching applications.

Key Specifications

ParameterValue
ManufacturerNXP USA Inc.
Package6-TSSOP (SOT-363)
FET TypeDual N-channel
Drain-Source Voltage (Vdss)30V
Continuous Drain Current (Id) at 25°C900mA
Maximum Power Dissipation390mW

Key Features

  • Dual N-channel MOSFET configuration for enhanced performance in power management and switching applications.
  • Low on-resistance, reducing power losses and improving efficiency.
  • High current handling capability of up to 900mA at 25°C.
  • Compact 6-TSSOP (SOT-363) package, ideal for space-constrained designs.
  • Maximum drain-source voltage of 30V, suitable for a wide range of applications.

Applications

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial control systems.
  • Consumer electronics requiring efficient power handling.

Q & A

  1. What is the package type of the PMGD175XN,115 MOSFET?
    The PMGD175XN,115 is packaged in a 6-TSSOP (SOT-363) package.
  2. What is the maximum drain-source voltage (Vdss) of the PMGD175XN,115?
    The maximum drain-source voltage (Vdss) is 30V.
  3. What is the continuous drain current (Id) at 25°C for the PMGD175XN,115?
    The continuous drain current (Id) at 25°C is 900mA.
  4. What is the maximum power dissipation of the PMGD175XN,115?
    The maximum power dissipation is 390mW.
  5. In what types of applications is the PMGD175XN,115 commonly used?
    The PMGD175XN,115 is commonly used in power management and switching circuits, DC-DC converters, motor control systems, and automotive and industrial control systems.
  6. Who is the manufacturer of the PMGD175XN,115 MOSFET?
    The manufacturer is NXP USA Inc.
  7. What are the key features of the PMGD175XN,115 MOSFET?
    The key features include dual N-channel configuration, low on-resistance, high current handling, and a compact 6-TSSOP package.
  8. Is the PMGD175XN,115 suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high current handling and low on-resistance.
  9. Can the PMGD175XN,115 be used in automotive applications?
    Yes, it can be used in automotive applications due to its robust specifications and reliability.
  10. Where can I find the datasheet for the PMGD175XN,115?
    The datasheet can be found on the official NXP website or through distributors like Ariat-Tech and Octopart.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:900mA
Rds On (Max) @ Id, Vgs:225mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:75pF @ 15V
Power - Max:390mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
0 Remaining View Similar

In Stock

$0.09
10,240

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NX3008PBKV,115
NX3008PBKV,115
Nexperia USA Inc.
MOSFET 2P-CH 30V 220MA SOT666
FDME1024NZT
FDME1024NZT
onsemi
MOSFET 2N-CH 20V 3.8A 6-MICROFET
2N7002BKS,115
2N7002BKS,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.3A 6TSSOP
FDC6306P
FDC6306P
onsemi
MOSFET 2P-CH 20V 1.9A SSOT6
STL8DN6LF3
STL8DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
NX3008NBKV,115
NX3008NBKV,115
Nexperia USA Inc.
MOSFET 2N-CH 30V 400MA SOT666
BUK7K52-60EX
BUK7K52-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 15.4A LFPAK
BUK9K35-60E,115
BUK9K35-60E,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 22A LFPAK56D
FDMC8097AC
FDMC8097AC
onsemi
MOSFET N/P-CH 150V
FDG6303N_D87Z
FDG6303N_D87Z
onsemi
MOSFET 2N-CH 25V 0.5A SC70-6
FDG6301N-F085
FDG6301N-F085
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
ECH8667-TL-HX
ECH8667-TL-HX
onsemi
MOSFET 2P-CH 30V 5.5A ECH8

Related Product By Brand

BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
MK24FN1M0VLL12
MK24FN1M0VLL12
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 100LQFP
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
MKL04Z32VLF4
MKL04Z32VLF4
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MCIMX7U3DVK07SC
MCIMX7U3DVK07SC
NXP USA Inc.
IC I.MX 7ULP VFBGA 361
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
74HCT14D/S400118
74HCT14D/S400118
NXP USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
74LV08D/C118
74LV08D/C118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
BAS21SW115
BAS21SW115
NXP USA Inc.
NOW NEXPERIA BAS21SW - RECTIFIER
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,