NVMD6P02R2G
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onsemi NVMD6P02R2G

Manufacturer No:
NVMD6P02R2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 4.8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NVMD6P02R2G is a power MOSFET array produced by onsemi, designed for high-performance applications. This device features a dual P-channel configuration, making it suitable for a variety of power management and switching tasks. With its robust specifications and compact 8-SOIC package, the NVMD6P02R2G is an excellent choice for designers seeking reliable and efficient power handling in their systems.

Key Specifications

ParameterValue
Model NumberNVMD6P02R2G
TypeMOSFET Array
Channel ModeEnhancement, P-Channel
Maximum Drain-Source Voltage (Vds)20 V
Maximum Continuous Drain Current (Id)4.8 A
Maximum Power Dissipation (Pd)1.28 W
Operating Temperature Range-55°C to +150°C
Package Type8-SOIC, Surface Mount

Key Features

  • Dual P-channel MOSFET configuration for enhanced performance and flexibility.
  • High maximum continuous drain current of 4.8 A.
  • Low on-resistance for efficient power handling.
  • Compact 8-SOIC package suitable for space-constrained designs.
  • Wide operating temperature range from -55°C to +150°C.

Applications

  • Power management and switching in automotive systems.
  • Industrial control and automation.
  • Consumer electronics requiring high-efficiency power handling.
  • Medical devices and equipment.
  • Telecommunications and networking equipment.

Q & A

  1. What is the maximum drain-source voltage of the NVMD6P02R2G?
    The maximum drain-source voltage (Vds) is 20 V.
  2. What is the maximum continuous drain current of the NVMD6P02R2G?
    The maximum continuous drain current (Id) is 4.8 A.
  3. What is the operating temperature range of the NVMD6P02R2G?
    The operating temperature range is from -55°C to +150°C.
  4. What is the package type of the NVMD6P02R2G?
    The package type is 8-SOIC, surface mount.
  5. What is the maximum power dissipation of the NVMD6P02R2G?
    The maximum power dissipation (Pd) is 1.28 W.
  6. Is the NVMD6P02R2G suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its robust specifications and wide operating temperature range.
  7. Can the NVMD6P02R2G be used in consumer electronics?
    Yes, it can be used in consumer electronics that require high-efficiency power handling.
  8. What is the channel mode of the NVMD6P02R2G?
    The channel mode is enhancement, P-channel.
  9. Where can I find detailed specifications for the NVMD6P02R2G?
    Detailed specifications can be found on the official onsemi website, as well as on distributor sites like Mouser, Digi-Key, and Component Sense.
  10. Is the NVMD6P02R2G available for immediate shipment?
    Yes, it is available for immediate shipment from various distributors.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.8A
Rds On (Max) @ Id, Vgs:33mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1700pF @ 16V
Power - Max:750mW
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number NVMD6P02R2G NTMD6P02R2G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type 2 P-Channel (Dual) 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 4.8A 4.8A
Rds On (Max) @ Id, Vgs 33mOhm @ 6.2A, 4.5V 33mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 16V 1700pF @ 16V
Power - Max 750mW 750mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

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