Overview
The NTZD3154NT1G is a dual N-channel small signal MOSFET produced by onsemi. This component is designed for various electronic applications requiring low power switching and amplification. It operates in enhancement mode and is packaged in a SOT-563 surface mount package, which is Pb-free, halogen-free, and RoHS compliant. The MOSFET is suitable for a wide range of temperatures, from -55°C to 150°C, making it versatile for different environmental conditions.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | V |
| Gate-to-Source Voltage | VGS | ±7.0 | V |
| Continuous Drain Current (TA = 25°C) | ID | 540 | mA |
| Continuous Drain Current (TA = 85°C) | ID | 390 | mA |
| Power Dissipation (Steady State) | PD | 250 | mW |
| Pulsed Drain Current (tp = 10 μs) | IDM | 1.5 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 540 mA) | RDS(on) | 0.4 - 0.55 | Ω |
| Gate Threshold Voltage | VGS(TH) | 0.45 - 1.0 | V |
| Package Type | SOT-563 | ||
| Package Dimensions | 1.6 x 1.2 x 0.55 mm |
Key Features
- Low RDS(on) improving system efficiency
- Low threshold voltage
- Small footprint (1.6 x 1.2 mm)
- ESD protected gate
- Pb-free, halogen-free, and RoHS compliant
- TrenchFET® Power MOSFET technology
- 100% Rg tested
Applications
- Load/power switches
- Power supply converter circuits
- Battery management
- Cell phones, digital cameras, PDAs, pagers, etc.
Q & A
- What is the maximum drain-to-source voltage of the NTZD3154NT1G MOSFET?
The maximum drain-to-source voltage is 20 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 540 mA at 25°C and 390 mA at 85°C.
- What is the power dissipation of the NTZD3154NT1G?
The steady-state power dissipation is 250 mW.
- What is the operating temperature range of the NTZD3154NT1G?
The operating junction and storage temperature range is -55°C to 150°C.
- What is the typical drain-to-source on resistance?
The typical drain-to-source on resistance is 0.4 - 0.55 Ω at VGS = 4.5 V and ID = 540 mA.
- Is the NTZD3154NT1G Pb-free and RoHS compliant?
- What are the package dimensions of the NTZD3154NT1G?
The package dimensions are 1.6 x 1.2 x 0.55 mm in a SOT-563 package.
- What are some typical applications of the NTZD3154NT1G?
Typical applications include load/power switches, power supply converter circuits, battery management, and use in cell phones, digital cameras, PDAs, and pagers.
- Is the NTZD3154NT1G suitable for high-temperature environments?
- What is the gate threshold voltage of the NTZD3154NT1G?
The gate threshold voltage is between 0.45 V and 1.0 V).
