Overview
The EFC6604R-TR is a dual N-Channel power MOSFET designed by onsemi, specifically tailored for applications involving 1-cell lithium-ion battery protection. This device features a low on-state resistance, making it highly efficient for power switching in portable devices. The MOSFET is packaged in a WLCSP6 (Wafer Level Chip Scale Package) and is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Source-to-Source Voltage | VSSS | 12 | V |
| Gate-to-Source Voltage | VGSS | ±12 | V |
| Source Current (DC) | IS | 13 | A |
| Source Current (Pulse) | ISP | 60 | A (PW ≤ 10 μs, duty cycle ≤ 1%) |
| Total Dissipation | PT | 1.6 | W |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature | TSTG | -55 to +150 | °C |
| Junction to Ambient Thermal Resistance | RθJA | 78.1 | °C/W |
| Static Source-to-Source On-State Resistance (at VGS = 4.5 V) | RSS(on) | 6.0 - 9.0 | mΩ |
| Gate Threshold Voltage | VGS(th) | 0.5 - 1.3 | V |
| Turn-ON Delay Time | td(on) | - 300 | ns |
| Turn-OFF Delay Time | td(off) | - 5200 | ns |
| Total Gate Charge | Qg | - 29 | nC |
Key Features
- Low on-state resistance, enhancing efficiency in power switching applications.
- 2.5 V drive capability, suitable for low-voltage systems.
- 2 kV ESD HBM protection, ensuring robustness against electrostatic discharge.
- Common-drain type configuration.
- ESD diode-protected gate for added reliability.
- Pb-free, halogen-free, and RoHS compliant, meeting environmental standards.
Applications
- 1-cell lithium-ion battery charging and discharging switches.
- Power switches for portable machines and devices.
Q & A
- What is the EFC6604R-TR MOSFET used for?
The EFC6604R-TR is used for 1-cell lithium-ion battery protection and as power switches in portable devices.
- What is the maximum source-to-source voltage for the EFC6604R-TR?
The maximum source-to-source voltage is 12 V.
- What is the maximum source current for the EFC6604R-TR?
The maximum DC source current is 13 A, and the maximum pulse source current is 60 A (PW ≤ 10 μs, duty cycle ≤ 1%).
- What is the thermal resistance of the EFC6604R-TR?
The junction to ambient thermal resistance (RθJA) is 78.1 °C/W.
- Is the EFC6604R-TR RoHS compliant?
- What is the gate threshold voltage range for the EFC6604R-TR?
The gate threshold voltage range is 0.5 to 1.3 V.
- What is the typical turn-on delay time for the EFC6604R-TR?
The typical turn-on delay time is 300 ns.
- What is the total gate charge for the EFC6604R-TR?
The total gate charge is approximately 29 nC.
- What type of package does the EFC6604R-TR come in?
The EFC6604R-TR comes in a WLCSP6 (Wafer Level Chip Scale Package).
- What are the storage temperature limits for the EFC6604R-TR?
The storage temperature range is -55 to +150 °C.
