BC807-16-AU_R1_000A1
  • Share:

Panjit International Inc. BC807-16-AU_R1_000A1

Manufacturer No:
BC807-16-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-16-AU_R1_000A1 is a silicon PNP general-purpose transistor manufactured by Panjit International Inc. This transistor is part of the BC807 series and is known for its excellent DC current gain characteristics and versatility in various electronic applications. It is packaged in a SOT-23 case, making it suitable for a wide range of electronic devices where space is a concern.

Key Specifications

Parameter Symbol Limit Units
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -500 mA
Collector Current (Pulse) ICP -1000 mA
Total Power Dissipation PTOT 330 mW
Operating Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Resistance from Junction to Ambient RθJA 375 °C/W
DC Current Gain (hFE) at VCE = -1V, IC = -100mA hFE 100 to 250
Collector-Emitter Saturation Voltage at IC = -500mA, IB = -50mA VCE(SAT) -0.7 V
Base-Emitter Turn-on Voltage at IC = -500mA, VCE = -1V VBE(on) -1.2 V
Transition Frequency at IC = -10mA, VCE = -5V fT 100 MHz

Key Features

  • Silicon PNP Epitaxial Type: Ensures high performance and reliability.
  • Excellent DC Current Gain Characteristics: Suitable for a wide range of amplifier applications.
  • General Purpose Amplifier Application: Versatile use in various electronic circuits.
  • AEC-Q101 Qualified: Meets automotive industry standards for reliability and performance.
  • Lead Free and RoHS Compliant: Complies with EU RoHS 2.0 and uses green molding compound as per IEC 61249 Standard.
  • SOT-23 Package: Compact and suitable for space-constrained designs.
  • Solderable Terminals: Compliant with MIL-STD-750, Method 2026.

Applications

  • Automotive Electronics: Given its AEC-Q101 qualification, it is suitable for use in automotive systems.
  • General Purpose Amplifiers: Ideal for use in various amplifier circuits due to its excellent DC current gain characteristics.
  • Consumer Electronics: Can be used in a wide range of consumer electronic devices due to its compact SOT-23 package and reliable performance.
  • Industrial Control Systems: Suitable for use in industrial control and automation systems where reliability and performance are critical.

Q & A

  1. What is the package type of the BC807-16-AU_R1_000A1 transistor?

    The BC807-16-AU_R1_000A1 transistor is packaged in a SOT-23 case.

  2. What is the maximum collector current (DC) for the BC807-16-AU_R1_000A1 transistor?

    The maximum collector current (DC) is -500 mA.

  3. Is the BC807-16-AU_R1_000A1 transistor AEC-Q101 qualified?

    Yes, the BC807-16-AU_R1_000A1 transistor is AEC-Q101 qualified, making it suitable for automotive applications.

  4. What is the operating junction and storage temperature range for the BC807-16-AU_R1_000A1 transistor?

    The operating junction and storage temperature range is -55 to 150°C.

  5. Is the BC807-16-AU_R1_000A1 transistor lead-free and RoHS compliant?

    Yes, the transistor is lead-free and compliant with EU RoHS 2.0.

  6. What is the typical DC current gain (hFE) for the BC807-16-AU_R1_000A1 transistor at VCE = -1V and IC = -100mA?

    The typical DC current gain (hFE) is between 100 to 250.

  7. What is the collector-emitter saturation voltage (VCE(SAT)) for the BC807-16-AU_R1_000A1 transistor at IC = -500mA and IB = -50mA?

    The collector-emitter saturation voltage (VCE(SAT)) is approximately -0.7 V.

  8. What is the base-emitter turn-on voltage (VBE(on)) for the BC807-16-AU_R1_000A1 transistor at IC = -500mA and VCE = -1V?

    The base-emitter turn-on voltage (VBE(on)) is approximately -1.2 V.

  9. What is the transition frequency (fT) for the BC807-16-AU_R1_000A1 transistor at IC = -10mA and VCE = -5V?

    The transition frequency (fT) is approximately 100 MHz.

  10. What is the thermal resistance from junction to ambient (RθJA) for the BC807-16-AU_R1_000A1 transistor?

    The thermal resistance from junction to ambient (RθJA) is approximately 375°C/W.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.21
1,956

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
ST13003N
ST13003N
STMicroelectronics
TRANS NPN 400V 1A SOT32-3
NSS20200LT1G
NSS20200LT1G
onsemi
TRANS PNP 20V 2A SOT23-3
MMBT2484
MMBT2484
Fairchild Semiconductor
TRANS NPN 60V 0.1A SOT23-3
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
NJVMJD350T4G
NJVMJD350T4G
onsemi
TRANS PNP 300V 0.5A DPAK
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
BC846B/DG/B4R
BC846B/DG/B4R
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BZX84C4V3TW_R1_00001
BZX84C4V3TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
BZX84C15TW_R1_00001
BZX84C15TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
PDZ22B_R1_00001
PDZ22B_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B24_R1_00001
BZX84B24_R1_00001
Panjit International Inc.
SOT-23, ZENER
BZX84B2V4-AU_R1_000A1
BZX84B2V4-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PDZ6.2B_R1_00001
PDZ6.2B_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C4V7W_R1_00001
BZX84C4V7W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B4V3-AU_R1_000A1
BZX84B4V3-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BC817-40W_R1_00001
BC817-40W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC858BW_R1_00001
BC858BW_R1_00001
Panjit International Inc.
TRANS PNP 30V 0.1A SOT323