BC807-16-AU_R1_000A1
  • Share:

Panjit International Inc. BC807-16-AU_R1_000A1

Manufacturer No:
BC807-16-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-16-AU_R1_000A1 is a silicon PNP general-purpose transistor manufactured by Panjit International Inc. This transistor is part of the BC807 series and is known for its excellent DC current gain characteristics and versatility in various electronic applications. It is packaged in a SOT-23 case, making it suitable for a wide range of electronic devices where space is a concern.

Key Specifications

Parameter Symbol Limit Units
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -500 mA
Collector Current (Pulse) ICP -1000 mA
Total Power Dissipation PTOT 330 mW
Operating Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Resistance from Junction to Ambient RθJA 375 °C/W
DC Current Gain (hFE) at VCE = -1V, IC = -100mA hFE 100 to 250
Collector-Emitter Saturation Voltage at IC = -500mA, IB = -50mA VCE(SAT) -0.7 V
Base-Emitter Turn-on Voltage at IC = -500mA, VCE = -1V VBE(on) -1.2 V
Transition Frequency at IC = -10mA, VCE = -5V fT 100 MHz

Key Features

  • Silicon PNP Epitaxial Type: Ensures high performance and reliability.
  • Excellent DC Current Gain Characteristics: Suitable for a wide range of amplifier applications.
  • General Purpose Amplifier Application: Versatile use in various electronic circuits.
  • AEC-Q101 Qualified: Meets automotive industry standards for reliability and performance.
  • Lead Free and RoHS Compliant: Complies with EU RoHS 2.0 and uses green molding compound as per IEC 61249 Standard.
  • SOT-23 Package: Compact and suitable for space-constrained designs.
  • Solderable Terminals: Compliant with MIL-STD-750, Method 2026.

Applications

  • Automotive Electronics: Given its AEC-Q101 qualification, it is suitable for use in automotive systems.
  • General Purpose Amplifiers: Ideal for use in various amplifier circuits due to its excellent DC current gain characteristics.
  • Consumer Electronics: Can be used in a wide range of consumer electronic devices due to its compact SOT-23 package and reliable performance.
  • Industrial Control Systems: Suitable for use in industrial control and automation systems where reliability and performance are critical.

Q & A

  1. What is the package type of the BC807-16-AU_R1_000A1 transistor?

    The BC807-16-AU_R1_000A1 transistor is packaged in a SOT-23 case.

  2. What is the maximum collector current (DC) for the BC807-16-AU_R1_000A1 transistor?

    The maximum collector current (DC) is -500 mA.

  3. Is the BC807-16-AU_R1_000A1 transistor AEC-Q101 qualified?

    Yes, the BC807-16-AU_R1_000A1 transistor is AEC-Q101 qualified, making it suitable for automotive applications.

  4. What is the operating junction and storage temperature range for the BC807-16-AU_R1_000A1 transistor?

    The operating junction and storage temperature range is -55 to 150°C.

  5. Is the BC807-16-AU_R1_000A1 transistor lead-free and RoHS compliant?

    Yes, the transistor is lead-free and compliant with EU RoHS 2.0.

  6. What is the typical DC current gain (hFE) for the BC807-16-AU_R1_000A1 transistor at VCE = -1V and IC = -100mA?

    The typical DC current gain (hFE) is between 100 to 250.

  7. What is the collector-emitter saturation voltage (VCE(SAT)) for the BC807-16-AU_R1_000A1 transistor at IC = -500mA and IB = -50mA?

    The collector-emitter saturation voltage (VCE(SAT)) is approximately -0.7 V.

  8. What is the base-emitter turn-on voltage (VBE(on)) for the BC807-16-AU_R1_000A1 transistor at IC = -500mA and VCE = -1V?

    The base-emitter turn-on voltage (VBE(on)) is approximately -1.2 V.

  9. What is the transition frequency (fT) for the BC807-16-AU_R1_000A1 transistor at IC = -10mA and VCE = -5V?

    The transition frequency (fT) is approximately 100 MHz.

  10. What is the thermal resistance from junction to ambient (RθJA) for the BC807-16-AU_R1_000A1 transistor?

    The thermal resistance from junction to ambient (RθJA) is approximately 375°C/W.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.21
1,956

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

BAT54C_R1_00001
BAT54C_R1_00001
Panjit International Inc.
SOT-23, SKY
BAT54S-AU_R1_000A1
BAT54S-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS40S-AU_R1_000A1
BAS40S-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAV99STB6_R1_00001
BAV99STB6_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BAS21S_R1_00001
BAS21S_R1_00001
Panjit International Inc.
SOT-23, SWITCHING
BAT54A-AU_R1_000A1
BAT54A-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
BAS316-AU_R1_000A1
BAS316-AU_R1_000A1
Panjit International Inc.
SOD-323, SWITCHING
BZX84C3V9_R1_00001
BZX84C3V9_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B30_R1_00001
BZX84B30_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C47_R1_00001
BZX84C47_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C27_R1_00001
BZX84C27_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BC846BS_R1_00001
BC846BS_R1_00001
Panjit International Inc.
NPN GENERAL PURPOSE TRANSISTORS