Overview
The BC857BS-AU_R1_000A1 is a PNP general-purpose double transistor produced by Panjit International Inc. This component is designed in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained applications. The transistor is part of the BC857 series, known for its low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. This dual transistor configuration reduces the number of components and board space required, while also minimizing mutual interference between the transistors.
Key Specifications
| Parameter | Symbol | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | V | - | - | -45 |
| Collector-Base Voltage | VCBO | V | - | - | -50 |
| Emitter-Base Voltage | VEB0 | V | - | - | -5 |
| Collector Current - Continuous | IC | mA | - | - | -100 |
| Peak Collector Current | ICM | mA | - | - | -200 |
| Max Power Dissipation | PTOT | mW | - | - | 200 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | °C | -50 | - | 150 |
| DC Current Gain (hFE) | hFE | - | 200 | 450 | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | V | - | - | 0.3 |
| Base-Emitter Saturation Voltage | VBE(SAT) | V | - | - | 0.7 |
Key Features
- Low Collector Capacitance: Reduces the impact of parasitic capacitance, making it suitable for high-frequency applications.
- Low Collector-Emitter Saturation Voltage: Minimizes power loss and improves efficiency in switching and amplification applications.
- Closely Matched Current Gain: Ensures consistent performance across the dual transistors, reducing variability in circuit behavior.
- Compact SOT363 Package: Saves board space and is ideal for compact designs.
- No Mutual Interference: The dual transistor configuration is designed to minimize interference between the transistors.
- AEC-Q101 Qualified: Suitable for automotive applications, ensuring reliability and performance under stringent conditions.
- Lead-Free and RoHS Compliant: Meets environmental regulations, making it a sustainable choice.
Applications
- General Purpose Amplification and Switching: Suitable for a wide range of general-purpose amplifier and switching applications.
- Automotive Systems: AEC-Q101 qualified, making it reliable for use in automotive electronics.
- Industrial Control Systems: Used in various industrial control and automation applications due to its robust and reliable performance.
- Consumer Electronics: Found in consumer electronics such as audio equipment, power supplies, and other electronic devices.
- Mobile and Wearable Devices: Its compact size and low power consumption make it suitable for mobile and wearable device applications.
Q & A
- What is the package type of the BC857BS-AU_R1_000A1 transistor?
The BC857BS-AU_R1_000A1 transistor is packaged in a SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
- What is the maximum collector-emitter voltage (VCEO) of the BC857BS-AU_R1_000A1 transistor?
The maximum collector-emitter voltage (VCEO) is -45V.
- What is the maximum collector current (IC) of the BC857BS-AU_R1_000A1 transistor?
The maximum collector current (IC) is -100mA.
- Is the BC857BS-AU_R1_000A1 transistor AEC-Q101 qualified?
Yes, the BC857BS-AU_R1_000A1 transistor is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the operating junction temperature range of the BC857BS-AU_R1_000A1 transistor?
The operating junction temperature range is from -50°C to 150°C.
- What is the typical DC current gain (hFE) of the BC857BS-AU_R1_000A1 transistor?
The typical DC current gain (hFE) ranges from 200 to 450.
- Is the BC857BS-AU_R1_000A1 transistor lead-free and RoHS compliant?
Yes, the BC857BS-AU_R1_000A1 transistor is lead-free and compliant with EU RoHS 2.0 regulations.
- What are some common applications of the BC857BS-AU_R1_000A1 transistor?
Common applications include general-purpose amplification, switching, automotive systems, industrial control systems, and consumer electronics.
- How does the dual transistor configuration benefit the design?
The dual transistor configuration reduces the number of components and board space required, while also minimizing mutual interference between the transistors.
- What is the maximum power dissipation (PTOT) of the BC857BS-AU_R1_000A1 transistor?
The maximum power dissipation (PTOT) is 200mW.
