BCP56-16-AU_R2_000A1
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Panjit International Inc. BCP56-16-AU_R2_000A1

Manufacturer No:
BCP56-16-AU_R2_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 100V 1A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP56-16-AU_R2_000A1, produced by Panjit International Inc., is a medium power NPN bipolar junction transistor (BJT) designed for a variety of applications requiring high current and voltage handling capabilities. This transistor is part of the BCP56 series, known for its robust performance and reliability in different operating conditions.

Key Specifications

ParameterValueUnit
TypeNPN-
Collector-Emitter Voltage (VCEO)100V
Collector Current (IC)1A
Power Dissipation (PTOT)2600mW
Current Gain (hFE)100 - 250-
Junction Temperature (TJ)150°C
Transition Frequency (fT)100MHz
PackageSOT-223-
Automotive QualificationAEC-Q101-

Key Features

  • High collector current capability of up to 1 A.
  • High collector-emitter voltage of up to 100 V.
  • High power dissipation capability of 2600 mW.
  • Wide range of current gain (hFE) from 100 to 250.
  • High transition frequency of 100 MHz.
  • AEC-Q101 qualified for automotive applications.
  • Compact SOT-223 package.

Applications

The BCP56-16-AU_R2_000A1 is suitable for a wide range of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive electronics.
  • Industrial control: High power and current handling make it suitable for industrial control systems.
  • Power management: Used in power management circuits requiring high current and voltage capabilities.
  • Consumer electronics: Can be used in various consumer electronic devices that require robust transistor performance.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BCP56-16-AU_R2_000A1?
    The collector-emitter voltage (VCEO) is up to 100 V.
  2. What is the maximum collector current (IC) of this transistor?
    The maximum collector current (IC) is 1 A.
  3. What is the power dissipation capability of the BCP56-16-AU_R2_000A1?
    The power dissipation capability is 2600 mW.
  4. What is the current gain (hFE) range of this transistor?
    The current gain (hFE) ranges from 100 to 250.
  5. What is the transition frequency (fT) of the BCP56-16-AU_R2_000A1?
    The transition frequency (fT) is 100 MHz.
  6. Is the BCP56-16-AU_R2_000A1 qualified for automotive applications?
    Yes, it is AEC-Q101 qualified for automotive applications.
  7. What package type does the BCP56-16-AU_R2_000A1 use?
    It uses the SOT-223 package.
  8. What is the junction temperature (TJ) of this transistor?
    The junction temperature (TJ) is up to 150°C.
  9. Where can I find more detailed specifications and datasheets for the BCP56-16-AU_R2_000A1?
    You can find detailed specifications and datasheets on the official websites of Panjit International Inc. or through distributors like Digi-Key, Mouser, and Nexperia.
  10. What are some common applications of the BCP56-16-AU_R2_000A1?
    Common applications include automotive systems, industrial control, power management, and consumer electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2.6 W
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number BCP56-16-AU_R2_000A1 BCP53-16-AU_R2_000A1
Manufacturer Panjit International Inc. Panjit International Inc.
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2.6 W 2.6 W
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223

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