BC807-25-AU_R1_000A1
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Panjit International Inc. BC807-25-AU_R1_000A1

Manufacturer No:
BC807-25-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25-AU_R1_000A1 is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Panjit International Inc. This transistor is part of the BC807 series and is known for its high reliability and versatility in various electronic applications. It features an epitaxial planar die construction and is packaged in a small SOT-23 surface-mounted device (SMD) plastic package, making it ideal for space-constrained designs.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) -50 V
Collector-Emitter Voltage (VCEO) -45 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (DC) (IC) -500 mA
Collector Current (Pulse) (ICP) -1000 mA
Total Power Dissipation (PTOT) 330 mW
Operating Junction and Storage Temperature Range (TJ, TSTG) -55 to +150 °C
Thermal Resistance from Junction to Ambient (RθJA) 375 °C/W
DC Current Gain (hFE) 160 - 400
Collector-Emitter Saturation Voltage (VCE(sat)) -0.7 mV
Base-Emitter Turn-on Voltage (VBE(on)) -1.2 V
Transition Frequency (fT) 100 MHz

Key Features

  • Silicon PNP epitaxial type transistor
  • Excellent DC current gain characteristics
  • General purpose amplifier application
  • AEC-Q101 qualified, suitable for automotive applications
  • Lead-free and compliant with EU RoHS 2.0
  • Green molding compound as per IEC 61249 Standard
  • Ideally suited for automatic insertion
  • Halogen-free

Applications

  • General-purpose amplifier applications
  • Automotive electronics due to AEC-Q101 qualification
  • Consumer electronics requiring small signal transistors
  • Industrial control systems and automation
  • Audio and video equipment

Q & A

  1. What is the collector-emitter voltage rating of the BC807-25-AU_R1_000A1 transistor?

    The collector-emitter voltage rating is -45 V.

  2. What is the maximum collector current for the BC807-25-AU_R1_000A1 transistor?

    The maximum DC collector current is -500 mA.

  3. What is the operating temperature range for the BC807-25-AU_R1_000A1 transistor?

    The operating junction and storage temperature range is -55°C to +150°C.

  4. Is the BC807-25-AU_R1_000A1 transistor AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the package type of the BC807-25-AU_R1_000A1 transistor?

    The transistor is packaged in a SOT-23 surface-mounted device (SMD) plastic package.

  6. What are the key features of the BC807-25-AU_R1_000A1 transistor?

    Key features include excellent DC current gain characteristics, general-purpose amplifier application, and compliance with EU RoHS 2.0.

  7. What is the transition frequency (fT) of the BC807-25-AU_R1_000A1 transistor?

    The transition frequency is 100 MHz.

  8. Is the BC807-25-AU_R1_000A1 transistor lead-free and halogen-free?

    Yes, it is both lead-free and halogen-free.

  9. What is the typical collector-emitter saturation voltage (VCE(sat)) of the BC807-25-AU_R1_000A1 transistor?

    The typical collector-emitter saturation voltage is -0.7 V.

  10. What is the base-emitter turn-on voltage (VBE(on)) of the BC807-25-AU_R1_000A1 transistor?

    The base-emitter turn-on voltage is -1.2 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number BC807-25-AU_R1_000A1 BC807-25W-AU_R1_000A1
Manufacturer Panjit International Inc. Panjit International Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 330 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23 SOT-323

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