Overview
The BC847BVN-7, produced by Diodes Incorporated, is a dual NPN/PNP bipolar junction transistor (BJT) array packaged in a small surface mount SOT666 package. This component is designed for general-purpose transistor applications and is notable for its high integration, compact size, and excellent high-frequency performance. It is suitable for a wide range of electronic applications, particularly in space-constrained designs.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Emitter Breakdown Voltage (VCEO) | 45 | V |
Collector Current (IC) | 100 | mA |
Peak Collector Current (ICM) | 200 | mA (single pulse, tp ≤ 1 ms) |
DC Current Gain (hFE) | 200 - 450 | - |
Collector-Emitter Saturation Voltage (VCEsat) | 300 mV @ 5 mA, 100 mA | mV |
Total Power Dissipation (Ptot) | 200 mW (per transistor), 300 mW (per device) | mW |
Operating Temperature Range | -55 to 150 | °C |
Thermal Resistance (Rth(j-a)) | - 416 K/W | K/W |
Key Features
- Two internally isolated NPN/PNP transistors in one package.
- Ultra-small surface mount package (SOT666).
- High integration in a tiny package, suitable for space-constrained applications.
- Excellent high-frequency performance with a frequency transition up to 100 MHz.
- Wide operating temperature range from -55°C to 150°C.
- RoHS3 compliant, meeting industry standards for surface mount packaging.
Applications
- Amplifiers.
- Switches.
- Logic gates.
- Level shifters.
- General-purpose transistor applications.
Q & A
- What is the maximum collector-emitter breakdown voltage of the BC847BVN-7?
The maximum collector-emitter breakdown voltage is 45 V. - What is the maximum collector current for the BC847BVN-7?
The maximum collector current is 100 mA. - What is the DC current gain range for the BC847BVN-7?
The DC current gain (hFE) ranges from 200 to 450 at VCE = 5 V and IC = 2 mA. - What is the operating temperature range of the BC847BVN-7?
The operating temperature range is from -55°C to 150°C. - Is the BC847BVN-7 RoHS compliant?
Yes, the BC847BVN-7 is RoHS3 compliant. - What is the package type of the BC847BVN-7?
The package type is SOT666, a surface-mounted package with 6 leads. - What are the typical applications of the BC847BVN-7?
Typical applications include amplifiers, switches, logic gates, level shifters, and general-purpose transistor applications. - What is the maximum power dissipation for the BC847BVN-7?
The maximum power dissipation is 200 mW per transistor and 300 mW per device. - What is the thermal resistance from junction to ambient for the BC847BVN-7?
The thermal resistance from junction to ambient is approximately 416 K/W. - Is the BC847BVN-7 suitable for high-frequency applications?
Yes, it has excellent high-frequency performance with a frequency transition up to 100 MHz.