SMUN5111DW1T1G
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onsemi SMUN5111DW1T1G

Manufacturer No:
SMUN5111DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 50V 0.1A SC88/SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5111DW1T1G is a dual PNP digital transistor manufactured by ON Semiconductor. This component is designed to simplify circuit design by integrating a transistor and a monolithic bias resistor network into a single device. It is particularly useful for applications requiring compact and efficient digital signal processing. The SMUN5111DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. It operates within a temperature range of -55°C to 150°C and is packaged in a 6-pin SC-88 (SOT-363) surface mount configuration.

Key Specifications

Characteristic Value Unit
Collector-Base Voltage 50 Vdc
Collector-Emitter Voltage 50 Vdc
Collector Current Continuous 100 mAdc
DC Current Gain (Minimum) 35 @ 5mA @ 10V -
Collector-Emitter Saturation Voltage 0.25 @ 0.3mA @ 10mA V
Maximum Power Dissipation 385 mW
Operating Temperature Range -55°C to 150°C -
Package Type SC-88 (SOT-363) -
Mounting Type Surface Mount -

Key Features

  • Integrated Bias Resistor Network: The SMUN5111DW1T1G includes a monolithic bias resistor network, which simplifies circuit design and reduces the need for external resistors.
  • Dual Configuration: This transistor is available in a dual configuration, making it versatile for various applications.
  • Compact Packaging: The component is packaged in a 6-pin SC-88 (SOT-363) surface mount configuration, reducing board space.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and quality standards.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for a variety of environmental conditions.
  • Low Power Dissipation: Maximum power dissipation of 385 mW, which is efficient for low-power applications.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification, this transistor is ideal for use in automotive systems where reliability and durability are critical.
  • Digital Signal Processing: Suitable for applications requiring efficient digital signal processing, such as in industrial control systems, consumer electronics, and communication devices.
  • General Purpose Switching: Can be used in general-purpose switching applications where a compact and reliable transistor is needed.
  • Industrial Automation: Useful in industrial automation systems where compact, efficient, and reliable components are essential.

Q & A

  1. What is the maximum collector-emitter voltage of the SMUN5111DW1T1G?

    The maximum collector-emitter voltage is 50 Vdc.

  2. What is the continuous DC collector current of the SMUN5111DW1T1G?

    The continuous DC collector current is 100 mA.

  3. What is the minimum DC current gain of the SMUN5111DW1T1G?

    The minimum DC current gain is 35 @ 5mA @ 10V.

  4. What is the maximum power dissipation of the SMUN5111DW1T1G?

    The maximum power dissipation is 385 mW.

  5. What is the operating temperature range of the SMUN5111DW1T1G?

    The operating temperature range is -55°C to 150°C.

  6. What type of packaging does the SMUN5111DW1T1G use?

    The component is packaged in a 6-pin SC-88 (SOT-363) surface mount configuration.

  7. Is the SMUN5111DW1T1G AEC-Q101 qualified?

    Yes, the SMUN5111DW1T1G is AEC-Q101 qualified and PPAP capable.

  8. What are the benefits of the integrated bias resistor network in the SMUN5111DW1T1G?

    The integrated bias resistor network simplifies circuit design, reduces board space, and decreases the component count.

  9. In what types of applications is the SMUN5111DW1T1G commonly used?

    It is commonly used in automotive systems, digital signal processing, general-purpose switching, and industrial automation.

  10. Is the SMUN5111DW1T1G RoHS compliant?

    Yes, the SMUN5111DW1T1G is RoHS compliant, PbFree, and Halogen Free/BFR Free.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300nA, 10mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Power - Max:385mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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