Overview
The SMUN5111DW1T1G is a dual PNP digital transistor manufactured by ON Semiconductor. This component is designed to simplify circuit design by integrating a transistor and a monolithic bias resistor network into a single device. It is particularly useful for applications requiring compact and efficient digital signal processing. The SMUN5111DW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. It operates within a temperature range of -55°C to 150°C and is packaged in a 6-pin SC-88 (SOT-363) surface mount configuration.
Key Specifications
Characteristic | Value | Unit |
---|---|---|
Collector-Base Voltage | 50 | Vdc |
Collector-Emitter Voltage | 50 | Vdc |
Collector Current Continuous | 100 | mAdc |
DC Current Gain (Minimum) | 35 @ 5mA @ 10V | - |
Collector-Emitter Saturation Voltage | 0.25 @ 0.3mA @ 10mA | V |
Maximum Power Dissipation | 385 | mW |
Operating Temperature Range | -55°C to 150°C | - |
Package Type | SC-88 (SOT-363) | - |
Mounting Type | Surface Mount | - |
Key Features
- Integrated Bias Resistor Network: The SMUN5111DW1T1G includes a monolithic bias resistor network, which simplifies circuit design and reduces the need for external resistors.
- Dual Configuration: This transistor is available in a dual configuration, making it versatile for various applications.
- Compact Packaging: The component is packaged in a 6-pin SC-88 (SOT-363) surface mount configuration, reducing board space.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and quality standards.
- Wide Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for a variety of environmental conditions.
- Low Power Dissipation: Maximum power dissipation of 385 mW, which is efficient for low-power applications.
Applications
- Automotive Systems: Given its AEC-Q101 qualification, this transistor is ideal for use in automotive systems where reliability and durability are critical.
- Digital Signal Processing: Suitable for applications requiring efficient digital signal processing, such as in industrial control systems, consumer electronics, and communication devices.
- General Purpose Switching: Can be used in general-purpose switching applications where a compact and reliable transistor is needed.
- Industrial Automation: Useful in industrial automation systems where compact, efficient, and reliable components are essential.
Q & A
- What is the maximum collector-emitter voltage of the SMUN5111DW1T1G?
The maximum collector-emitter voltage is 50 Vdc.
- What is the continuous DC collector current of the SMUN5111DW1T1G?
The continuous DC collector current is 100 mA.
- What is the minimum DC current gain of the SMUN5111DW1T1G?
The minimum DC current gain is 35 @ 5mA @ 10V.
- What is the maximum power dissipation of the SMUN5111DW1T1G?
The maximum power dissipation is 385 mW.
- What is the operating temperature range of the SMUN5111DW1T1G?
The operating temperature range is -55°C to 150°C.
- What type of packaging does the SMUN5111DW1T1G use?
The component is packaged in a 6-pin SC-88 (SOT-363) surface mount configuration.
- Is the SMUN5111DW1T1G AEC-Q101 qualified?
Yes, the SMUN5111DW1T1G is AEC-Q101 qualified and PPAP capable.
- What are the benefits of the integrated bias resistor network in the SMUN5111DW1T1G?
The integrated bias resistor network simplifies circuit design, reduces board space, and decreases the component count.
- In what types of applications is the SMUN5111DW1T1G commonly used?
It is commonly used in automotive systems, digital signal processing, general-purpose switching, and industrial automation.
- Is the SMUN5111DW1T1G RoHS compliant?
Yes, the SMUN5111DW1T1G is RoHS compliant, PbFree, and Halogen Free/BFR Free.