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2N7002KW_R1_00001
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Panjit International Inc. 2N7002KW_R1_00001

Manufacturer No:
2N7002KW_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
SOT-323, MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KW is an N-Channel Enhancement Mode Field Effect Transistor (FET) produced by Panjit International Inc. This device is designed for low on-resistance, low gate threshold voltage, and fast switching speeds, making it suitable for a variety of applications. The 2N7002KW is packaged in a ultra-small SOT-323 case, which is Pb-free and RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 115 mA
Pulsed Drain Current IDM 800 mA
Operating Junction Temperature Range TJ -55 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
On-Resistance at VGS=10V, ID=500mA RDS(ON) 3Ω
On-Resistance at VGS=4.5V, ID=200mA RDS(ON) 4Ω
Junction-to-Ambient Thermal Resistance RθJA 625 °C/W

Key Features

  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small SOT-323 surface mount package
  • Pb-free and RoHS compliant
  • ESD protected (HBM = 1000 V, CDM = 1500 V)
  • Advanced trench process technology
  • High density cell design for ultra-low on-resistance
  • Very low leakage current in off condition
  • Specially designed for battery-operated systems, solid-state relays, drivers for relays, displays, lamps, solenoids, and memories

Applications

  • Battery-operated systems
  • Solid-state relays
  • Drivers for relays, displays, lamps, and solenoids
  • Memory circuits
  • General-purpose switching applications

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KW?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current rating of the 2N7002KW?

    The continuous drain current (ID) is 115 mA.

  3. What is the on-resistance of the 2N7002KW at VGS=10V and ID=500mA?

    The on-resistance (RDS(ON)) is 3Ω at VGS=10V and ID=500mA.

  4. Is the 2N7002KW ESD protected?
  5. What is the junction-to-ambient thermal resistance of the 2N7002KW?

    The junction-to-ambient thermal resistance (RθJA) is 625 °C/W.

  6. What package type is the 2N7002KW available in?

    The 2N7002KW is available in an ultra-small SOT-323 surface mount package.

  7. Is the 2N7002KW RoHS compliant?
  8. What are some typical applications of the 2N7002KW?

    Typical applications include battery-operated systems, solid-state relays, drivers for relays, displays, lamps, solenoids, and memories.

  9. What is the operating junction temperature range of the 2N7002KW?

    The operating junction temperature range (TJ) is -55 to +150 °C.

  10. What is the storage temperature range of the 2N7002KW?

    The storage temperature range (TSTG) is -55 to +150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:35 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number 2N7002KW_R1_00001 2N7002K_R1_00001
Manufacturer Panjit International Inc. Panjit International Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V 0.8 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 35 pF @ 25 V 35 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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