Overview
The 2N7002K_R1_00001, produced by Panjit International Inc., is a 60V N-Channel Enhancement Mode MOSFET. This device is designed using advanced trench process technology, which provides ultra-low on-resistance and high-speed switching capabilities. It is packaged in a SOT-23 surface mount package, making it ideal for space-constrained applications. The MOSFET is ESD protected up to 2000V HBM and is RoHS compliant, ensuring environmental sustainability and reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage (RGS ≤ 1.0 MΩ) | VDGR | 60 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current | ID | 300 | mA |
| Pulsed Drain Current (Note 1) | IDM | 2000 | mA |
| Power Dissipation (TA = 25°C) | PD | 500 | mW |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
| Gate Threshold Voltage | VGS(th) | 1 to 2.5 | V |
| Drain-Source On-State Resistance (VGS = 10V, ID = 500mA) | RDS(ON) | < 3 | Ω |
| Drain-Source On-State Resistance (VGS = 4.5V, ID = 200mA) | RDS(ON) | < 4 | Ω |
Key Features
- Low on-resistance: RDS(ON) < 3Ω at VGS = 10V, ID = 500mA and RDS(ON) < 4Ω at VGS = 4.5V, ID = 200mA.
- Advanced trench process technology and high density cell design for ultra-low on-resistance.
- Very low leakage current in the off condition.
- High-speed switching capabilities.
- ESD protected up to 2000V HBM.
- Lead-free and RoHS compliant.
- Ultra-small SOT-23 surface mount package.
- Low input capacitance and low gate charge.
Applications
- Specially designed for battery-operated systems.
- Solid-state relays and drivers.
- Display and memory applications.
- Logic level translators and DC-DC converters.
- General-purpose switching applications.
Q & A
- What is the maximum drain-source voltage of the 2N7002K MOSFET? The maximum drain-source voltage is 60V.
- What is the continuous drain current rating of the 2N7002K? The continuous drain current rating is 300mA.
- What is the gate-source threshold voltage range of the 2N7002K? The gate-source threshold voltage range is from 1V to 2.5V.
- Is the 2N7002K ESD protected? Yes, the 2N7002K is ESD protected up to 2000V HBM.
- What package type is the 2N7002K available in? The 2N7002K is available in a SOT-23 surface mount package.
- Is the 2N7002K RoHS compliant? Yes, the 2N7002K is RoHS compliant and lead-free.
- What are some typical applications of the 2N7002K? Typical applications include battery-operated systems, solid-state relays, display and memory applications, and general-purpose switching.
- What is the maximum power dissipation of the 2N7002K at 25°C? The maximum power dissipation is 500mW.
- What is the operating junction and storage temperature range of the 2N7002K? The operating junction and storage temperature range is from -55°C to 150°C.
- Does the 2N7002K have low input capacitance? Yes, the 2N7002K has low input capacitance, which is beneficial for high-speed switching applications.
